Soltani Ali
Soltani Ali
Associate professor
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deep-ultraviolet solar-blind cubic boron nitride based photodetectors
A Soltani, HA Barkad, M Mattalah, B Benbakhti, JC De Jaeger, YM Chong, ...
Applied Physics Letters 92 (5), 053501, 2008
deep-ultraviolet solar-blind cubic boron nitride based photodetectors
A Soltani, HA Barkad, M Mattalah, B Benbakhti, JC De Jaeger, YM Chong, ...
Applied Physics Letters 92 (5), 053501, 2008
LYRA, a solar UV radiometer on Proba2
JF Hochedez, W Schmutz, Y Stockman, U Schühle, A Benmoussa, ...
Advances in Space Research 37 (2), 303-312, 2006
Recent developments of wide-bandgap semiconductor based UV sensors
A BenMoussa, A Soltani, U Schühle, K Haenen, YM Chong, WJ Zhang, ...
Diamond and Related Materials 18 (5-8), 860-864, 2009
Effects of self-heating on performance degradation in AlGaN/GaN-based devices
B Benbakhti, A Soltani, K Kalna, M Rousseau, JC De Jaeger
IEEE transactions on electron devices 56 (10), 2178-2185, 2009
High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates
A Minko, V Hoel, S Lepilliet, G Dambrine, JC De Jaeger, Y Cordier, ...
IEEE Electron Device Letters 25 (4), 167-169, 2004
Characterization of AlN metal-semiconductor-metal diodes in the spectral range of : Photoemission assessments
A BenMoussa, JF Hochedez, R Dahal, J Li, JY Lin, HX Jiang, A Soltani, ...
Applied Physics Letters 92 (2), 022108, 2008
AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz
A Minko, V Hoel, E Morvan, B Grimbert, A Soltani, E Delos, D Ducatteau, ...
IEEE Electron Device Letters 25 (7), 453-455, 2004
Investigation of the performance of HEMT-based NO, NO2 and NH3 exhaust gas sensors for automotive antipollution systems
Y Halfaya, C Bishop, A Soltani, S Sundaram, V Aubry, PL Voss, ...
Sensors 16 (3), 273, 2016
Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz
A Soltani, JC Gerbedoen, Y Cordier, D Ducatteau, M Rousseau, ...
IEEE electron device letters 34 (4), 490-492, 2013
Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT
A Soltani, A BenMoussa, S Touati, V Hoël, JC De Jaeger, J Laureyns, ...
Diamond and related materials 16 (2), 262-266, 2007
The effect of oxidation on physical properties of porous silicon layers for optical applications
P Pirasteh, J Charrier, A Soltani, S Haesaert, L Haji, C Godon, N Errien
Applied Surface Science 253 (4), 1999-2002, 2006
Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure
N Tiercelin, A Talbi, V Preobrazhensky, P Pernod, V Mortet, K Haenen, ...
Applied Physics Letters 93 (16), 162902, 2008
Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors
M Boucherit, OF Shoron, TA Cain, CA Jackson, S Stemmer, S Rajan
Applied Physics Letters 102 (24), 242909, 2013
Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
M Boucherit, A Soltani, E Monroy, M Rousseau, D Deresmes, M Berthe, ...
Applied Physics Letters 99 (18), 182109, 2011
Performance of diamond detectors for VUV applications
A BenMoussa, A Theissen, F Scholze, JF Hochedez, U Schühle, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
New developments on diamond photodetector for VUV solar observations
A BenMoussa, A Soltani, K Haenen, U Kroth, V Mortet, HA Barkad, ...
Semiconductor science and technology 23 (3), 035026, 2008
Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
WH Goh, G Patriarche, PL Bonanno, S Gautier, T Moudakir, M Abid, ...
Journal of crystal growth 315 (1), 160-163, 2011
AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz
JC Gerbedoen, A Soltani, S Joblot, JC De Jaeger, C Gaquiere, Y Cordier, ...
IEEE Transactions on Electron Devices 57 (7), 1497-1503, 2010
Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study
V Mortet, L Zhang, M Eckert, J D'Haen, A Soltani, M Moreau, D Troadec, ...
physica status solidi (a) 209 (9), 1675-1682, 2012
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