Qi Liu
Qi Liu
Professor of Institute of Microelectronics, Chinese Academy of Sciences
Verifierad e-postadress på ime.ac.cn
Citeras av
Citeras av
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application
YC Yang, F Pan, Q Liu, M Liu, F Zeng
Nano letters 9 (4), 1636-1643, 2009
Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM
Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu
Advanced Materials 24 (14), 1844-1849, 2012
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode
Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu
ACS nano 4 (10), 6162-6168, 2010
Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications
Y Wang, Q Liu, S Long, W Wang, Q Wang, M Zhang, S Zhang, Y Li, Q Zuo, ...
Nanotechnology 21 (4), 045202, 2009
Resistive switching memory effect of films with implanted
Q Liu, W Guan, S Long, R Jia, M Liu, J Chen
Applied physics letters 92 (1), 012117, 2008
Nonpolar Nonvolatile Resistive Switching in Cu Doped
W Guan, S Long, Q Liu, M Liu, W Wang
IEEE Electron Device Letters 29 (5), 434-437, 2008
Heterojunction of facet coupled g-C3N4/surface-fluorinated TiO2 nanosheets for organic pollutants degradation under visible LED light irradiation
K Dai, L Lu, C Liang, Q Liu, G Zhu
Applied Catalysis B: Environmental 156, 331-340, 2014
Improvement of Resistive Switching Properties in -Based ReRAM With Implanted Ti Ions
Q Liu, S Long, W Wang, Q Zuo, S Zhang, J Chen, M Liu
IEEE Electron Device Letters 30 (12), 1335-1337, 2009
On the resistive switching mechanisms of
W Guan, M Liu, S Long, Q Liu, W Wang
Applied Physics Letters 93 (22), 223506, 2008
Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology
H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu
Advanced Functional Materials 24 (36), 5679-5686, 2014
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Multilevel resistive switching with ionic and metallic filaments
M Liu, Z Abid, W Wang, X He, Q Liu, W Guan
Applied Physics Letters 94 (23), 233106, 2009
Sonication assisted preparation of graphene oxide/graphitic-C3N4 nanosheet hybrid with reinforced photocurrent for photocatalyst applications
K Dai, L Lu, Q Liu, G Zhu, X Wei, J Bai, L Xuan, H Wang
Dalton Transactions 43 (17), 6295-6299, 2014
Memristor with Ag‐Cluster‐Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing
X Yan, J Zhao, S Liu, Z Zhou, Q Liu, J Chen, XY Liu
Advanced Functional Materials 28 (1), 1705320, 2018
Resistive Switching Properties of Structure for Low-Voltage Nonvolatile Memory Applications
Y Li, S Long, M Zhang, Q Liu, L Shao, S Zhang, Y Wang, Q Zuo, S Liu, ...
IEEE electron device letters 31 (2), 117-119, 2009
Eliminating negative‐SET behavior by suppressing nanofilament overgrowth in cation‐based memory
S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu
Advanced Materials 28 (48), 10623-10629, 2016
Formation of multiple conductive filaments in the device
Q Liu, C Dou, Y Wang, S Long, W Wang, M Liu, M Zhang, J Chen
Applied Physics Letters 95 (2), 023501, 2009
Graphene and related materials for resistive random access memories
F Hui, E Grustan‐Gutierrez, S Long, Q Liu, AK Ott, AC Ferrari, M Lanza
Advanced Electronic Materials 3 (8), 1600195, 2017
Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
X Zhao, J Ma, X Xiao, Q Liu, L Shao, D Chen, S Liu, J Niu, X Zhang, ...
Advanced materials 30 (14), 1705193, 2018
Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning
X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou
Advanced Functional Materials 28 (40), 1803728, 2018
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