Nuria Barniol
Nuria Barniol
Verifierad e-postadress på uab.es
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On the breakdown statistics of very thin SiO2 films
J Sune, I Placencia, N Barniol, E Farrés, F Martin, X Aymerich
Thin solid films 185 (2), 347-362, 1990
2751990
Electromechanical model of a resonating nano-cantilever-based sensor for high-resolution and high-sensitivity mass detection
G Abadal, ZJ Davis, B Helbo, X Borrise, R Ruiz, A Boisen, F Campabadal, ...
Nanotechnology 12 (2), 100, 2001
1652001
Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry
E Forsen, G Abadal, S Ghatnekar-Nilsson, J Teva, J Verd, R Sandberg, ...
Applied Physics Letters 87 (4), 043507, 2005
1422005
Monolithic CMOS MEMS oscillator circuit for sensing in the attogram range
J Verd, A Uranga, G Abadal, JL Teva, F Torres, J Lopez, F Perez-Murano, ...
IEEE electron device letters 29 (2), 146-148, 2008
1322008
Nanometer‐scale oxidation of Si (100) surfaces by tapping mode atomic force microscopy
F Pérez‐Murano, G Abadal, N Barniol, X Aymerich, J Servat, P Gorostiza, ...
Journal of applied physics 78 (11), 6797-6801, 1995
1171995
AFM lithography of aluminum for fabrication of nanomechanical systems
ZJ Davis, G Abadal, O Hansen, X Borise, N Barniol, F Perez-Murano, ...
Ultramicroscopy 97 (1-4), 467-472, 2003
1032003
Integration of RF-MEMS resonators on submicrometric commercial CMOS technologies
JL Lopez, J Verd, J Teva, G Murillo, J Giner, F Torres, A Uranga, G Abadal, ...
Journal of Micromechanics and Microengineering 19 (1), 015002, 2008
972008
Nondestructive multiple breakdown events in very thin SiO2 films
J Suñé, E Farrés, I Placencia, N Barniol, F Martín, X Aymerich
Applied Physics Letters 55 (2), 128-130, 1989
941989
Design, fabrication, and characterization of a submicroelectromechanical resonator with monolithically integrated CMOS readout circuit
J Verd, G Abadal, J Teva, MV Gaudó, A Uranga, X Borrisé, F Campabadal, ...
Journal of microelectromechanical systems 14 (3), 508-519, 2005
902005
Integrated CMOS-MEMS with on-chip readout electronics for high-frequency applications
J Verd, A Uranga, J Teva, JL Lopez, F Torres, J Esteve, G Abadal, ...
IEEE Electron Device Letters 27 (6), 495-497, 2006
822006
Monolithic mass sensor fabricated using a conventional technology with attogram resolution in air conditions
J Verd, A Uranga, G Abadal, J Teva, F Torres, F Pérez-Murano, ...
Applied physics letters 91 (1), 013501, 2007
792007
A CMOS–MEMS RF-Tunable Bandpass Filter Based on Two High-22-MHz Polysilicon Clamped-Clamped Beam Resonators
JL Lopez, J Verd, A Uranga, J Giner, G Murillo, F Torres, G Abadal, ...
IEEE Electron Device Letters 30 (7), 718-720, 2009
702009
Modification of HF‐treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions
N Barniol, F Pérez‐Murano, X Aymerich
Applied Physics Letters 61 (4), 462-464, 1992
701992
Field induced oxidation of silicon by SPM: study of the mechanism at negative sample voltage by STM, ESTM and AFM.
G Abadal, F Perez-Murano, N Barniol, X Aymerich
Applied Physics A: Materials Science & Processing 66 (7), 1998
681998
CMOS–MEMS resonators: From devices to applications
A Uranga, J Verd, N Barniol
Microelectronic Engineering 132, 58-73, 2015
662015
Monolithic integration of mass sensing nano-cantilevers with CMOS circuitry
ZJ Davis, G Abadal, B Helbo, O Hansen, F Campabadal, F Pérez-Murano, ...
Sensors and Actuators A: Physical 105 (3), 311-319, 2003
602003
System on chip mass sensor based on polysilicon cantilevers arrays for multiple detection
M Villarroya, J Verd, J Teva, G Abadal, E Forsen, FP Murano, A Uranga, ...
Sensors and Actuators A: Physical 132 (1), 154-164, 2006
572006
Localized and distributed mass detectors with high sensitivity based on thin-film bulk acoustic resonators
H Campanella, J Esteve, J Montserrat, A Uranga, G Abadal, N Barniol, ...
Applied physics letters 89 (3), 033507, 2006
522006
Resonators with integrated CMOS circuitry for mass sensing applications, fabricated by electron beam lithography
S Ghatnekar-Nilsson, E Forsen, G Abadal, J Verd, F Campabadal, ...
Nanotechnology 16 (1), 98, 2004
522004
Degradation and breakdown of gate oxides in VLSI devices
J Sune, I Placencia, N Barniol, E Farres, X Aymerich
physica status solidi (a) 111 (2), 675-685, 1989
511989
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