GaAs nanowire pn-junctions produced by low-cost and high-throughput aerotaxy E Barrigón, O Hultin, D Lindgren, F Yadegari, MH Magnusson, ... Nano letters 18 (2), 1088-1092, 2017 | 55 | 2017 |
Comparing Hall effect and field effect measurements on the same single nanowire O Hultin, G Otnes, MT Borgstrom, M Bjork, L Samuelson, K Storm Nano letters 16 (1), 205-211, 2016 | 50 | 2016 |
Study of carrier concentration in single InP nanowires by luminescence and Hall measurements D Lindgren, O Hultin, M Heurlin, K Storm, MT Borgström, L Samuelson, ... Nanotechnology 26 (4), 045705, 2015 | 49 | 2015 |
InGaN platelets: synthesis and applications toward green and red light-emitting diodes Z Bi, F Lenrick, J Colvin, A Gustafsson, O Hultin, A Nowzari, T Lu, ... Nano Letters 19 (5), 2832-2839, 2019 | 48 | 2019 |
Synthesis of doped InP core–shell nanowires evaluated using hall effect measurements M Heurlin, O Hultin, K Storm, D Lindgren, MT Borgstrom, L Samuelson Nano letters 14 (2), 749-753, 2014 | 36 | 2014 |
High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds Z Bi, A Gustafsson, F Lenrick, D Lindgren, O Hultin, L Wallenberg, ... Journal of Applied Physics 123 (2), 2018 | 34 | 2018 |
Doping evaluation of InP nanowires for tandem junction solar cells F Lindelöw, M Heurlin, G Otnes, V Dagytė, D Lindgren, O Hultin, K Storm, ... Nanotechnology 27 (6), 065706, 2016 | 21 | 2016 |
Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications M Khalilian, Z Bi, J Johansson, F Lenrick, O Hultin, J Colvin, R Timm, ... Small 16 (30), 1907364, 2020 | 14 | 2020 |
Simplifying nanowire Hall effect characterization by using a three-probe device design O Hultin, G Otnes, L Samuelson, K Storm Nano Letters 17 (2), 1121-1126, 2017 | 11 | 2017 |
Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays J Colvin, R Ciechonski, F Lenrick, O Hultin, M Khalilian, A Mikkelsen, ... Physical Review Materials 3 (9), 093604, 2019 | 9 | 2019 |
Template-assisted vapour–liquid–solid growth of InP nanowires on (001) InP and Si substrates RJ Jam, AR Persson, E Barrigón, M Heurlin, I Geijselaers, VJ Gómez, ... Nanoscale 12 (2), 888-894, 2020 | 8 | 2020 |
Electrical and optical evaluation of n-type doping in InxGa (1− x) P nanowires X Zeng, RT Mourão, G Otnes, O Hultin, V Dagytė, M Heurlin, ... Nanotechnology 29 (25), 255701, 2018 | 8 | 2018 |
Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates R Delgado Carrascon, DQ Tran, P Sukkaew, A Mock, R Ciechonski, ... physica status solidi (b) 257 (4), 1900581, 2020 | 7 | 2020 |
InP nanowire p-type doping via Zinc indiffusion T Haggren, G Otnes, R Mourao, V Dagyte, O Hultin, F Lindelöw, ... Journal of Crystal Growth 451, 18-26, 2016 | 6 | 2016 |
Nanostructures for optoelectronics: Device fabrication and characterization O Hultin | 5 | 2018 |
Hall Effect Characterization of Nanowires O Hultin, K Storm, L Samuelson 21st Century Nanoscience–A Handbook, 19-1-19-12, 2020 | | 2020 |
Correlated Luminescence and Hall Measurements on Single Nanowires D Lindgren, M Heurlin, O Hultin, K Storm, M Borgström, L Samuelson, ... MRS Spring Meeting, 2014, 2014 | | 2014 |