Eamon O'Connor
Eamon O'Connor
EPFL, Nanolab
Verified email at epfl.ch
Title
Cited by
Cited by
Year
A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0†…
… O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 024101, 2011
1432011
Temperature and frequency dependent electrical characterization of interfaces using capacitance-voltage and conductance methods
… O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 102902, 2009
1212009
Poly (9, 9‐dioctylfluorene) nanowires with pronounced β‐phase morphology: synthesis, characterization, and optical properties
D O'Carroll, D Iacopino, A O'Riordan, P Lovera, … O'Connor, GA O'Brien, ...
Advanced Materials 20 (1), 42-48, 2008
1162008
Limited
J Choo
Paula, Jimmy Choo Spring/Summer, 2003
932003
In situ passivation of metal-oxide-semiconductor capacitors with atomic-layer deposited gate dielectric
E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 022902, 2008
692008
Near infrared electroluminescence from neodymium complex–doped polymer light emitting diodes
A O'Riordan, E O'Connor, S Moynihan, P Nockemann, P Fias, ...
Thin Solid Films 497 (1-2), 299-303, 2006
622006
Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays
… O’Connor, A O’Riordan, H Doyle, S Moynihan, A Cuddihy, G Redmond
Applied Physics Letters 86 (20), 201114, 2005
622005
Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 052904, 2010
612010
Low-Loss BaTiO3–Si Waveguides for Nonlinear Integrated Photonics
F Eltes, D Caimi, F Fallegger, M Sousa, E O’Connor, MD Rossell, ...
Acs Photonics 3 (9), 1698-1703, 2016
602016
Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric
V Djara, K Cherkaoui, M Schmidt, S Monaghan, … O'Connor, IM Povey, ...
IEEE transactions on electron devices 59 (4), 1084, 2012
572012
Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
… O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 212901, 2011
552011
Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon
PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of the Electrochemical Society 155 (2), G13, 2007
542007
Narrow bandwidth red electroluminescence from solution-processed lanthanide-doped polymer thin films
A O'Riordan, E O'Connor, S Moynihan, X Llinares, R Van Deun, P Fias, ...
Thin Solid Films 491 (1-2), 264-269, 2005
532005
An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, … O'Connor, ...
Journal of Applied Physics 114 (14), 144105, 2013
512013
Advanced 3D monolithic hybrid CMOS with sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI fin pFETs
V Deshpande, V Djara, E O'Connor, P Hashemi, K Balakrishnan, M Sousa, ...
2015 IEEE International Electron Devices Meeting (IEDM), 8.8. 1-8.8. 4, 2015
382015
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
PK Hurley, … O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
362013
Electrical analysis of three-stage passivated capacitors with varying thicknesses and incorporating an interface control layer
S Monaghan, A O’Mahony, K Cherkaoui, … O’Connor, IM Povey, ...
Journal of Vacuum Science & Technology B, Nanotechnology and†…, 2011
362011
Energy barriers at interfaces of (100)GaAs with atomic layer deposited and
VV Afanas’ ev, M Badylevich, A Stesmans, G Brammertz, A Delabie, ...
Applied Physics Letters 93 (21), 212104, 2008
342008
/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Depositedfor DRAM Applications
S Monaghan, K Cherkaoui, E O'connor, V Djara, PK Hurley, L Oberbeck, ...
IEEE electron device letters 30 (3), 219-221, 2009
332009
Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ...
ECS Transactions 25 (6), 113, 2009
312009
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