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R.I.G. Uhrberg
R.I.G. Uhrberg
Professor of Physics, Linköping University
Verified email at liu.se
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Cited by
Year
Core-level spectroscopy of the clean Si(001) surface: Charge transfer within asymmetric dimers of the 2×1 and c(4×2) reconstructions
E Landemark, CJ Karlsson, YC Chao, RIG Uhrberg
Physical review letters 69 (10), 1588, 1992
4491992
Photoelectron spectroscopy of surface states on semiconductor surfaces
GV Hansson, RIG Uhrberg
Surface science reports 9 (5-6), 197-292, 1988
2891988
Symmetric arsenic dimers on the Si (100) surface
RIG Uhrberg, RD Bringans, RZ Bachrach, JE Northrup
Physical review letters 56 (5), 520, 1986
2411986
Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si (111) surface
RIG Uhrberg, RD Bringans, MA Olmstead, RZ Bachrach, JE Northrup
Physical Review B 35 (8), 3945, 1987
2371987
Experimental evidence for one highly dispersive dangling-bond band on Si (111) 2× 1
RIG Uhrberg, GV Hansson, JM Nicholls, SA Flodström
Physical Review Letters 48 (15), 1032, 1982
2351982
Surface-state band structure of the Si (100) 2× 1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces
LSO Johansson, RIG Uhrberg, P Mårtensson, GV Hansson
Physical Review B 42 (2), 1305, 1990
2241990
Photoemission study of the surface and bulk electronic structures of Si (111) 7× 7 and Si (111)≤ 3×≤ 3: Al
RIG Uhrberg, GV Hansson, JM Nicholls, PES Persson, SA Flodström
Physical Review B 31 (6), 3805, 1985
2161985
Photoemission study of bonding at the -on-Si(111) interface
MA Olmstead, RIG Uhrberg, RD Bringans, RZ Bachrach
Physical Review B 35 (14), 7526, 1987
2071987
Experimental studies of the dangling-and dimer-bond-related surface electron bands on Si (100)(2× 1)
RIG Uhrberg, GV Hansson, JM Nicholls, SA Flodström
Physical Review B 24 (8), 4684, 1981
1891981
Arsenic overlayer on Si (111): Removal of surface reconstruction
MA Olmstead, RD Bringans, RIG Uhrberg, RZ Bachrach
Physical Review B 34 (8), 6041, 1986
1791986
Surface bands for single-domain 2× 1 reconstructed Si (100) and Si (100): As. Photoemission results for off-axis crystals
RD Bringans, RIG Uhrberg, MA Olmstead, RZ Bachrach
Physical Review B 34 (10), 7447, 1986
1681986
Abrupt rotation of the Rashba spin to the direction perpendicular to the surface
K Sakamoto, T Oda, A Kimura, K Miyamoto, M Tsujikawa, A Imai, N Ueno, ...
Physical review letters 102 (9), 096805, 2009
1642009
Arsenic-terminated Ge (111): An ideal 1× 1 surface
RD Bringans, RIG Uhrberg, RZ Bachrach, JE Northrup
Physical review letters 55 (5), 533, 1985
1511985
Structure of low-coverage phases of Al, Ga, and In on Si (100)
JE Northrup, MC Schabel, CJ Karlsson, RIG Uhrberg
Physical Review B 44 (24), 13799, 1991
1491991
Fermi-level pinning and surface-state band structure of the Si(111)-(√3×√3)R30°-Ag surface
LSO Johansson, E Landemark, CJ Karlsson, RIG Uhrberg
Physical review letters 63 (19), 2092, 1989
1461989
Interface formation of GaAs with Si (100), Si (111), and Ge (111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As
RD Bringans, MA Olmstead, RIG Uhrberg, RZ Bachrach
Physical Review B 36 (18), 9569, 1987
1451987
Hydrogen intercalation of graphene grown on 6H-SiC (0001)
S Watcharinyanon, C Virojanadara, JR Osiecki, AA Zakharov, ...
Surface Science 605 (17-18), 1662-1668, 2011
1342011
Hydrogen chemisorption on Si (111) 7× 7 studied with surface-sensitive core-level spectroscopy and angle-resolved photoemission
CJ Karlsson, E Landemark, LSO Johansson, UO Karlsson, RIG Uhrberg
Physical Review B 41 (3), 1521, 1990
1341990
Atomic origins of the surface components in the Si 2p core-level spectra of the Si(111)7×7 surface
CJ Karlsson, E Landemark, YC Chao, RIG Uhrberg
Physical Review B 50 (8), 5767, 1994
1301994
Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111)
MA Olmstead, RIG Uhrberg, RD Bringans, RZ Bachrach
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986
1171986
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