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Paweł Wolny
Paweł Wolny
Institute of High Pressure Physics Polish Academy of Sciences
Verifierad e-postadress på unipress.waw.pl - Startsida
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Stack of two III-nitride laser diodes interconnected by a tunnel junction
M Siekacz, G Muziol, M Hajdel, M Żak, K Nowakowski-Szkudlarek, ...
Optics Express 27 (4), 5784-5791, 2019
382019
Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy
G Muziol, H Turski, M Siekacz, P Wolny, S Grzanka, E Grzanka, P Perlin, ...
Applied Physics Express 8 (3), 032103, 2015
372015
The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures
M Gladysiewicz, R Kudrawiec, J Misiewicz, G Cywinski, M Siekacz, ...
Applied Physics Letters 98 (23), 2011
372011
Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
R Kudrawiec, M Gladysiewicz, L Janicki, J Misiewicz, G Cywinski, ...
Applied Physics Letters 100 (18), 2012
322012
Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface
H Turski, F Krzyżewski, A Feduniewicz-Żmuda, P Wolny, M Siekacz, ...
Applied Surface Science 484, 771-780, 2019
282019
True-blue nitride laser diodes grown by plasma-assisted molecular beam epitaxy
C Skierbiszewski, M Siekacz, H Turski, G Muziol, M Sawicka, P Wolny, ...
Applied Physics Express 5 (11), 112103, 2012
272012
Indium incorporation in semipolar (2021) and nonpolar (1010) InGaN grown by plasma assisted molecular beam epitaxy
M Sawicka, A Feduniewicz-Żmuda, M Kryśko, H Turski, G Muziol, ...
Journal of Crystal Growth 459, 129-134, 2017
242017
Determination of gain in AlGaN cladding free nitride laser diodes
G Muziol, H Turski, M Siekacz, M Sawicka, P Wolny, P Perlin, ...
Applied Physics Letters 103 (6), 2013
202013
Dependence of InGaN quantum well thickness on the nature of optical transitions in LEDs
M Hajdel, M Chlipała, M Siekacz, H Turski, P Wolny, ...
Materials 15 (1), 237, 2021
172021
High power nitride laser diodes grown by plasma assisted molecular beam epitaxy
G Muziol, M Siekacz, H Turski, P Wolny, S Grzanka, E Grzanka, ...
Journal of Crystal Growth 425, 398-400, 2015
152015
Cyan laser diode grown by plasma-assisted molecular beam epitaxy
H Turski, G Muziol, P Wolny, S Grzanka, G Cywiński, M Sawicka, P Perlin, ...
Applied Physics Letters 104 (2), 2014
152014
Waveguide Design for Long Wavelength InGaN Based Laser Diodes
G Muzioł, H Turski, M Siekacz, M Sawicka, P Wolny, C Cheze, G Cywiński, ...
Acta Physica Polonica A 122 (6), 1031-1033, 2012
142012
Influence of strain on the indium incorporation in (0001) GaN
T Schulz, L Lymperakis, M Anikeeva, M Siekacz, P Wolny, T Markurt, ...
Physical Review Materials 4 (7), 073404, 2020
132020
Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0. 02Ga0. 98N superlattices
P Wolny, M Anikeeva, M Sawicka, T Schulz, T Markurt, M Albrecht, ...
Journal of Applied Physics 124 (6), 2018
132018
Luminescent N-polar (In, Ga) N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700° C
C Chèze, F Feix, J Lähnemann, T Flissikowski, M Kryśko, P Wolny, ...
Applied Physics Letters 112 (2), 2018
132018
Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE
M Siekacz, P Wolny, T Ernst, E Grzanka, G Staszczak, T Suski, ...
Superlattices and Microstructures 133, 106209, 2019
122019
Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy
G Cywiński, R Kudrawiec, Ł Janicki, J Misiewicz, C Chèze, M Siekacz, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
122013
Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy
G Muziol, M Siekacz, K Nowakowski-Szkudlarek, M Hajdel, ...
Materials Science in Semiconductor Processing 91, 387-391, 2019
112019
Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
H Turski, G Muzioł, M Siekacz, P Wolny, K Szkudlarek, ...
Journal of Crystal Growth 482, 56-60, 2018
112018
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching
M Sawicka, N Fiuczek, H Turski, G Muziol, M Siekacz, ...
Nanoscale 12 (10), 6137-6143, 2020
102020
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