Ankur Nipane

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James T. TeheraniGaN Device Development and Process Integration Engineer, Texas InstrumentsVerified email at ti.com
Min Sup ChoiDepartment of Materials Science and Engineering, Chungnam National UniversityVerified email at cnu.ac.kr
James C. HoneDepartment of Mechanical Engineering, Columbia UniversityVerified email at columbia.edu
Abhinandan BorahNavitas SemiconductorVerified email at navitassemi.com
Won Jong YooProfessor of Sungkyunkwan UniversityVerified email at skku.edu
Naveen kaushikMicron TechnologyVerified email at micron.com
Saurabh LodhaProfessor, Electrical Engineering, IIT BombayVerified email at ee.iitb.ac.in
Younghun JungColumbia University, Postdoctoral Research ScientistVerified email at columbia.edu
Mandar M. DeshmukhCondensed Matter Physics and Materials Science, TIFR, Mumbai 400005 IndiaVerified email at tifr.res.in
Maya Narayanan NairResearch Assistant Professor, CUNY Advanced Science Research CenterVerified email at gc.cuny.edu
Abhay PasupathyProfessor of Physics, Columbia University and Group Leader, Brookhaven National LaboratoryVerified email at columbia.edu
Ioannis KymissisKenneth Brayer Professor of Electrical Engineering, Columbia UniversityVerified email at columbia.edu
Ipshita DattaUrbanek-Chodorow Fellow, Stanford UniversityVerified email at columbia.edu
Michal LipsonVerified email at columbia.edu
Zachary A LamportSenior Scientist, ExponentVerified email at exponent.com
Xiaoyang ZhuHoward Family Professor of Nanoscience, Columbia UniversityVerified email at columbia.edu
P. James SchuckColumbia UniversityVerified email at columbia.edu
Alexander KerelskyGoogleVerified email at google.com
Daniel RhodesUniversity of Wisconsin - MadisonVerified email at wisc.edu
Apoorv JindalPrinceton UniversityVerified email at princeton.edu

Ankur Nipane

Intel Corporation

Verified email at intel.com

Device Physics Device Modeling Nanofabrication 2D Materials


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Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation A Nipane, D Karmakar, N Kaushik, S Karande, S Lodha ACS nano 10 (2), 2128-2137, 2016	368	2016
Schottky barrier heights for Au and Pd contacts to MoS2 N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, MM Deshmukh, ... Applied Physics Letters 105 (11), 2014	270	2014
Transferred via contacts as a platform for ideal two-dimensional transistors Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ... Nature Electronics 2 (5), 187-194, 2019	208	2019
Interfacial n-Doping Using an Ultrathin TiO₂ Layer for Contact Resistance Reduction in MoS₂ N Kaushik, D Karmakar, A Nipane, S Karande, S Lodha ACS applied materials & interfaces 8 (1), 256-263, 2016	139	2016
Electrical characterization of 2D materials-based field-effect transistors SB Mitta, MS Choi, A Nipane*, F Ali, C Kim, J Teherani, JC Hone, ... 2D Materials 8 (1), 012002, 2020	128	2020
Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS₂ A Kerelsky, A Nipane, D Edelberg, D Wang, X Zhou, A Motmaendadgar, ... Nano letters 17 (10), 5962-5968, 2017	52	2017
Electrostatics of lateral pn junctions in atomically thin materials A Nipane, S Jayanti, A Borah, JT Teherani Journal of Applied Physics 122 (19), 2017	51	2017
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide MS Choi, A Nipane, BSY Kim*, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ... Nature Electronics 4 (10), 731-739, 2021	50	2021
Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices A Nipane, MS Choi, PJ Sebastian, K Yao, A Borah, P Deshmukh, ... ACS Applied Materials & Interfaces, 2020	27	2020
Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe₂ by Using a Monolayer Dopant A Borah, A Nipane, MS Choi, J Hone, JT Teherani ACS Applied Electronic Materials 3 (7), 2941-2947, 2021	17	2021
The 2D Debye length: An analytical study of weak charge screening in 2D semiconductors AR Bechhofer, A Ueda, A Nipane, JT Teherani Journal of Applied Physics 129 (2), 2021	15	2021
Ambipolar charge-transfer graphene plasmonic cavities BSY Kim, AJ Sternbach, MS Choi, Z Sun, FL Ruta, Y Shao, AS McLeod, ... Nature Materials 22 (7), 838-843, 2023	12	2023
Evaluating Au and Pd contacts in mono and multilayer MoS₂ transistors N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, M Deshmukh, ... 72nd Device Research Conference, 195-196, 2014	12	2014
Analytical Measurements of Contact Resistivity in Two-Dimensional WSe2 Field-Effect Transistors I Moon, MS Choi, S Lee, A Nipane, JC Hone, WJ Yoo 2D Materials, 2021	9	2021
Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions A Nipane, Y Zhang, JT Teherani Journal of Applied Physics 123 (21), 2018	9	2018
P-type doping of MoS₂ with phosphorus using a plasma immersion ion implantation (PIII) process A Nipane, N Kaushik, S Karande, D Karmakar, S Lodha 2015 73rd Annual Device Research Conference (DRC), 191-192, 2015	6	2015
Demystifying the role of channel region in two-dimensional transistors A Nipane, JT Teherani, A Ueda Applied Physics Express 14 (4), 044003, 2021	3	2021
Contact resistance reduction in MoS₂ FETs using ultra-thin TiO₂ interfacial layers N Kaushik, A Nipane, S Karande, S Lodha 2015 73rd Annual Device Research Conference (DRC), 211-212, 2015	3	2015
Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs A Nipane, PJ Sebastian, Y Jung, MS Choi, A Borah, WJ Yoo, J Hone, ... 2019 Device Research Conference (DRC), 231-232, 2019	2	2019
An intuitive equivalent circuit model for multilayer van der Waals heterostructures A Borah, PJ Sebastian, A Nipane, JT Teherani IEEE Transactions on Electron Devices 65 (10), 4209-4215, 2018	2	2018

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