Antonio Luciano de Almeida Fonseca
Antonio Luciano de Almeida Fonseca Fisica, Universidade de Brasilia
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Unexpected transition from single to double quantum well potential induced by intense laser fields in a semiconductor quantum well
FMS Lima, MA Amato, OAC Nunes, ALA Fonseca, BG Enders, ...
Journal of Applied Physics 105 (12), 123111, 2009
Hydrogenic impurities in a quantum well wire in intense, high-frequency laser fields
Q Fanyao, ALA Fonseca, OAC Nunes
Physical Review B 54 (23), 16405, 1996
Intense field effects on hydrogen impurities in quantum dots
Q Fanyao, ALA Fonseca, OAC Nunes
Journal of applied physics 82 (3), 1236-1241, 1997
Electronic properties of a quasi-two-dimensional electron gas in semiconductor quantum wells under intense laser fields
BG Enders, FMS Lima, OAC Nunes, ALA Fonseca, DA Agrello, F Qu, ...
Physical Review B 70 (3), 035307, 2004
Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1− xAs nanostructure in the presence of a static electric field
Q Fanyao, ALA Fonseca, OAC Nunes
Superlattices and microstructures 23 (5), 1005-1014, 1998
Transport of polarons in graphene nanoribbons
LA Ribeiro Jr, WF da Cunha, ALA Fonseca, GM e Silva, S Stafstrom
The journal of physical chemistry letters 6 (3), 510-514, 2015
Electric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells
FMS Lima, ALA Fonseca, OAC Nunes, Q Fanyao
Journal of applied physics 92 (9), 5296-5303, 2002
Dichotomy of the exciton wave function in semiconductors under intense laser fields
FMS Lima, OAC Nunes, MA Amato, ALA Fonseca, EF da Silva Jr
Journal of Applied Physics 103 (11), 113112, 2008
Intense laser field effects on the binding energy of impurities in semiconductors
FMS Lima, MA Amato, LSF Olavo, OAC Nunes, ALA Fonseca, ...
Physical Review B 75 (7), 073201, 2007
Impurity effects on polaron dynamics in graphene nanoribbons
WF da Cunha, LAR Junior, AL de Almeida Fonseca, R Gargano, ...
Carbon 91, 171-177, 2015
Intense laser field effect on confined hydrogenic impurities in quantum semiconductors
Q Fanyao, ALA Fonseca, OAC Nunes
physica status solidi (b) 197 (2), 349-357, 1996
Intense field effects on impurities in semiconductors
ALA Fonseca, MA Amato, OAC Nunes
physica status solidi (b) 186 (2), K57-K61, 1994
Experimental and theoretical isotope shifts of strontium levels subject to very strong configuration mixing
A Aspect, J Bauche, ALA Fonseca, P Grangier, G Roger
Journal of Physics B: Atomic and Molecular Physics (1968-1987) 17 (9), 1761, 1984
Amplification of hippersound in graphene under external direct current electric field
OAC Nunes, ALA Fonseca
Journal of Applied Physics 112 (4), 043707, 2012
Determination of electronic energy levels for the heteromolecular ions HeH2+, LiH3+, and BeH4+ from the Hamilton–Jacobi equation
JA Campos, DL Nascimento, DT Cavalcante, ALA Fonseca, AOC Nunes
International journal of quantum chemistry 106 (13), 2587-2596, 2006
Impact of the electron–phonon interactions on the polaron dynamics in graphene nanoribbons
AVP Abreu, JF Teixeira, ALA Fonseca, R Gargano, GM e Silva, LA Ribeiro
The Journal of Physical Chemistry A 120 (27), 4901-4906, 2016
Effect of a terahertz laser field on the electron-DOS in a GaAs/AlGaAs cylindrical quantum wire: finite well model
FMS Lima, OAC Nunes, ALA Fonseca, MA Amato, EF Da Silva
Semiconductor Science and Technology 23 (12), 125038, 2008
Electron Mobility in One (Two)‐Side Modulation‐Doped GaAs/AlxGa1—xAs Asymmetric Quantum Wells
FMS Lima, Q Fanyao, OAC Nunes, ALA Fonseca
physica status solidi (b) 225 (1), 43-61, 2001
Bipolaron dynamics in graphene nanoribbons
GG Silva, LA Ribeiro Junior, ML Pereira Junior, ALA Fonseca, ...
Scientific reports 9 (1), 1-8, 2019
Determination of the helium atom ground state through the Hamilton–Jacobi equation
DL Nascimento, ALA Fonseca, O Portilho
International journal of quantum chemistry 103 (5), 505-508, 2005
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