| Unexpected transition from single to double quantum well potential induced by intense laser fields in a semiconductor quantum well FMS Lima, MA Amato, OAC Nunes, ALA Fonseca, BG Enders, ... Journal of Applied Physics 105 (12), 123111, 2009 | 156 | 2009 |
| Hydrogenic impurities in a quantum well wire in intense, high-frequency laser fields Q Fanyao, ALA Fonseca, OAC Nunes Physical Review B 54 (23), 16405, 1996 | 120 | 1996 |
| Intense field effects on hydrogen impurities in quantum dots Q Fanyao, ALA Fonseca, OAC Nunes Journal of applied physics 82 (3), 1236-1241, 1997 | 63 | 1997 |
| Electronic properties of a quasi-two-dimensional electron gas in semiconductor quantum wells under intense laser fields BG Enders, FMS Lima, OAC Nunes, ALA Fonseca, DA Agrello, F Qu, ... Physical Review B 70 (3), 035307, 2004 | 60 | 2004 |
| Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1− xAs nanostructure in the presence of a static electric field Q Fanyao, ALA Fonseca, OAC Nunes Superlattices and microstructures 23 (5), 1005-1014, 1998 | 47 | 1998 |
| Transport of polarons in graphene nanoribbons LA Ribeiro Jr, WF da Cunha, ALA Fonseca, GM e Silva, S Stafstrom The journal of physical chemistry letters 6 (3), 510-514, 2015 | 39 | 2015 |
| Electric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells FMS Lima, ALA Fonseca, OAC Nunes, Q Fanyao Journal of applied physics 92 (9), 5296-5303, 2002 | 34 | 2002 |
| Dichotomy of the exciton wave function in semiconductors under intense laser fields FMS Lima, OAC Nunes, MA Amato, ALA Fonseca, EF da Silva Jr Journal of Applied Physics 103 (11), 113112, 2008 | 31 | 2008 |
| Intense laser field effects on the binding energy of impurities in semiconductors FMS Lima, MA Amato, LSF Olavo, OAC Nunes, ALA Fonseca, ... Physical Review B 75 (7), 073201, 2007 | 31 | 2007 |
| Impurity effects on polaron dynamics in graphene nanoribbons WF da Cunha, LAR Junior, AL de Almeida Fonseca, R Gargano, ... Carbon 91, 171-177, 2015 | 27 | 2015 |
| Intense laser field effect on confined hydrogenic impurities in quantum semiconductors Q Fanyao, ALA Fonseca, OAC Nunes physica status solidi (b) 197 (2), 349-357, 1996 | 27 | 1996 |
| Intense field effects on impurities in semiconductors ALA Fonseca, MA Amato, OAC Nunes physica status solidi (b) 186 (2), K57-K61, 1994 | 26 | 1994 |
| Experimental and theoretical isotope shifts of strontium levels subject to very strong configuration mixing A Aspect, J Bauche, ALA Fonseca, P Grangier, G Roger Journal of Physics B: Atomic and Molecular Physics (1968-1987) 17 (9), 1761, 1984 | 26 | 1984 |
| Amplification of hippersound in graphene under external direct current electric field OAC Nunes, ALA Fonseca Journal of Applied Physics 112 (4), 043707, 2012 | 23 | 2012 |
| Determination of electronic energy levels for the heteromolecular ions HeH2+, LiH3+, and BeH4+ from the Hamilton–Jacobi equation JA Campos, DL Nascimento, DT Cavalcante, ALA Fonseca, AOC Nunes International journal of quantum chemistry 106 (13), 2587-2596, 2006 | 19 | 2006 |
| Impact of the electron–phonon interactions on the polaron dynamics in graphene nanoribbons AVP Abreu, JF Teixeira, ALA Fonseca, R Gargano, GM e Silva, LA Ribeiro The Journal of Physical Chemistry A 120 (27), 4901-4906, 2016 | 18 | 2016 |
| Effect of a terahertz laser field on the electron-DOS in a GaAs/AlGaAs cylindrical quantum wire: finite well model FMS Lima, OAC Nunes, ALA Fonseca, MA Amato, EF Da Silva Semiconductor Science and Technology 23 (12), 125038, 2008 | 18 | 2008 |
| Electron Mobility in One (Two)‐Side Modulation‐Doped GaAs/AlxGa1—xAs Asymmetric Quantum Wells FMS Lima, Q Fanyao, OAC Nunes, ALA Fonseca physica status solidi (b) 225 (1), 43-61, 2001 | 16 | 2001 |
| Bipolaron dynamics in graphene nanoribbons GG Silva, LA Ribeiro Junior, ML Pereira Junior, ALA Fonseca, ... Scientific reports 9 (1), 1-8, 2019 | 15 | 2019 |
| Determination of the helium atom ground state through the Hamilton–Jacobi equation DL Nascimento, ALA Fonseca, O Portilho International journal of quantum chemistry 103 (5), 505-508, 2005 | 15 | 2005 |
F M S LimaInstitute of Physics, University of BrasiliaVerified email at fis.unb.br
