Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method T Sadi, RW Kelsall, NJ Pilgrim IEEE Transactions on Electron Devices 53 (12), 2892-2900, 2006 | 88 | 2006 |

Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo method T Sadi, R Kelsall, N Pilgrim IEEE transactions on electron devices 53 (8), 1768-1774, 2006 | 48 | 2006 |

On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes T Sadi, P Kivisaari, J Oksanen, J Tulkki Applied Physics Letters 105 (9), 091106, 2014 | 43 | 2014 |

Electrothermal monte carlo simulation of submicrometer Si/SiGe MODFETs T Sadi, RW Kelsall, NJ Pilgrim IEEE transactions on electron devices 54 (2), 332-339, 2007 | 39 | 2007 |

Enhanced light extraction from InGaN/GaN quantum wells with silver gratings E Homeyer, P Mattila, J Oksanen, T Sadi, H Nykänen, S Suihkonen, ... Applied Physics Letters 102 (8), 081110, 2013 | 34 | 2013 |

Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures T Sadi, F Dessenne, JL Thobel Journal of Applied Physics 105 (5), 053707, 2009 | 30 | 2009 |

The Green’s function description of emission enhancement in grated LED structures T Sadi, J Oksanen, J Tulkki, P Mattila, J Bellessa IEEE Journal of Selected Topics in Quantum Electronics 19 (5), 1-9, 2013 | 26 | 2013 |

A survey of carbon nanotube interconnects for energy efficient integrated circuits A Todri-Sanial, R Ramos, H Okuno, J Dijon, A Dhavamani, M Widlicenus, ... IEEE Circuits and Systems Magazine 17 (2), 47-62, 2017 | 24 | 2017 |

Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors T Sadi, RW Kelsall Journal of Applied Physics 107 (6), 064506, 2010 | 23 | 2010 |

Electrothermal monte carlo simulation of submicron wurtzite GaN/AlGaN HEMTs T Sadi, RW Kelsall, NJ Pilgrim Journal of Computational Electronics 6 (1), 35-39, 2007 | 23 | 2007 |

Analysis of the high-frequency performance of nanojunctions using a three-dimensional Monte Carlo simulator T Sadi, JL Thobel Journal of Applied Physics 106 (8), 083709, 2009 | 22 | 2009 |

Monte Carlo simulation of hot carrier transport in III-N LEDs P Kivisaari, J Oksanen, J Tulkki, T Sadi Journal of Computational Electronics 14 (2), 382-397, 2015 | 21 | 2015 |

Theoretical study of electron confinement in submicrometer GaN HFETs using a thermally self-consistent Monte Carlo method T Sadi, RW Kelsall IEEE transactions on electron devices 55 (4), 945-953, 2008 | 21 | 2008 |

Hot-phonon effect on the electrothermal behavior of submicrometer III-V HEMTs T Sadi, RW Kelsall IEEE electron device letters 28 (9), 787-789, 2007 | 21 | 2007 |

Effect of plasmonic losses on light emission enhancement in quantum-wells coupled to metallic gratings T Sadi, J Oksanen, J Tulkki Journal of Applied Physics 114 (22), 223104, 2013 | 20 | 2013 |

Monte Carlo study of self-heating in nanoscale devices T Sadi, RW Kelsall, NJ Pilgrim, JL Thobel, F Dessenne Journal of Computational Electronics 11 (1), 118-128, 2012 | 20 | 2012 |

Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator T Sadi, A Mehonic, L Montesi, M Buckwell, A Kenyon, A Asenov Journal of Physics: Condensed Matter 30 (8), 084005, 2018 | 19 | 2018 |

Electroluminescent cooling in intracavity light emitters: modeling and experiments T Sadi, P Kivisaari, J Tiira, I Radevici, T Haggren, J Oksanen Optical and Quantum Electronics 50 (1), 18, 2018 | 17 | 2018 |

On the Monte Carlo description of hot carrier effects and device characteristics of III‐N LEDs P Kivisaari, T Sadi, J Li, P Rinke, J Oksanen Advanced Electronic Materials 3 (6), 1600494, 2017 | 17 | 2017 |

Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ... Materials 12 (1), 124, 2019 | 15 | 2019 |