Amir Hossein Bayani
Amir Hossein Bayani
Verified email at kemi.uu.se - Homepage
TitleCited byYear
Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
AH Bayani, D Dideban, M Vali, N Moezi
Semiconductor Science and Technology 31 (4), 045009, 2016
152016
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
AH Bayani, D Dideban, N Moezi
Journal of Computational Electronics 15 (2), 381-388, 2016
102016
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
AH Bayani, D Dideban, J Voves, N Moezi
Superlattices and Microstructures 105, 110-116, 2017
72017
Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor
AH Bayani, D Dideban, N Moezi
Superlattices and Microstructures 100, 198-208, 2016
72016
The effect of concentration of H2 physisorption on the current–voltage characteristic of armchair BN nanotubes in CNT–BNNT–CNT set
R Azimirad, AH Bayani, S Safa
Pramana 87 (4), 46, 2016
62016
The study of the effect of increasing adsorbed hydrogen's atomic percentage on electronic properties of boron-nitride nanotube
AH Bayani, N Shahtahmassebi, DV Fakhrabad
Physica E: Low-dimensional Systems and Nanostructures 53, 168-172, 2013
62013
Theoretical logic performance estimation of Silicon, Germanium and SiGe nanowire Fin-Field Effect Transistor
MS Mobarakeh, S Omrani, M Vali, A Bayani, N Omrani
Superlattices and Microstructures 120, 578-587, 2018
42018
Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the …
D Dideban, A Ketabi, M Vali, AH Bayani, H Heidari
Materials Science in Semiconductor Processing 80, 18-23, 2018
42018
Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)
AH Bayani, J Voves, D Dideban
Superlattices and Microstructures 113, 769-776, 2018
32018
Benchmarking performance of a gate-all-around germanium nanotube field effect transistor (GAA-GeNTFET) against GAA-CNTFET
AH Bayani, D Dideban, M Akbarzadeh, N Moezi
ECS Journal of Solid State Science and Technology 6 (4), M24-M28, 2017
32017
CO gas opto‐electronic sensor using semiconductor graphene nanoribbons: A first‐principles study
R Azimirad, S Safa, AH Bayani
physica status solidi (b) 253 (3), 559-565, 2016
22016
Simulation Investigation of Siligene Nanoribbon as a Novel Gas Sensor with Strain Engineering: Sensitivity and Selectivity of Current-Voltage Characteristic
AJAH Bayani
ECS Journal of Solid State Science and Technology 6 (7), 83-87, 2017
12017
Simulation of Filed Effect Sensor Based on Graphene Nanoribbon to Detect Toxic NO Gas
A Jodat, AH Bayani
Silicon, 1-5, 2018
2018
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Articles 1–13