Amirhossein Bayani
Amirhossein Bayani
Fraunhofer IWM, Research institute in Freiburg im Breisgau, Germany
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Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
AH Bayani, D Dideban, M Vali, N Moezi
Semiconductor Science and Technology 31 (4), 045009, 2016
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
AH Bayani, D Dideban, J Voves, N Moezi
Superlattices and Microstructures 105, 110-116, 2017
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
AH Bayani, D Dideban, N Moezi
Journal of Computational Electronics 15 (2), 381-388, 2016
Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor
AH Bayani, D Dideban, N Moezi
Superlattices and Microstructures 100, 198-208, 2016
Theoretical logic performance estimation of Silicon, Germanium and SiGe Nanowire Fin-field effect transistor
MS Mobarakeh, S Omrani, M Vali, A Bayani, N Omrani
Superlattices and Microstructures 120, 578-587, 2018
Benchmarking performance of a gate-all-around germanium nanotube field effect transistor (GAA-GeNTFET) against GAA-CNTFET
AH Bayani, D Dideban, M Akbarzadeh, N Moezi
ECS Journal of Solid State Science and Technology 6 (4), M24, 2017
The morphology of an intercalated Au layer with its effect on the Dirac point of graphene
A Bayani, K Larsson
Scientific Reports 10, 2020
Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)
AH Bayani, J Voves, D Dideban
Superlattices and Microstructures 113, 769-776, 2018
Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the …
D Dideban, A Ketabi, M Vali, AH Bayani, H Heidari
Materials Science in Semiconductor Processing 80, 18-23, 2018
The effect of concentration of H 2 physisorption on the current–voltage characteristic of armchair BN nanotubes in CNT–BNNT–CNT …
R Azimirad, AH Bayani, S Safa
Pramana 87, 1-6, 2016
The study of the effect of increasing adsorbed hydrogen's atomic percentage on electronic properties of boron-nitride nanotube
AH Bayani, N Shahtahmassebi, DV Fakhrabad
Physica E: Low-dimensional Systems and Nanostructures 53, 168-172, 2013
Electronic and optical properties of 14, 14, 18 graphyne as an anti-visible ray coating
H Jafarzadeh, S Zahedi, AH Bayani
Optik 203, 163905, 2020
CO gas opto‐electronic sensor using semiconductor graphene nanoribbons: A first‐principles study
R Azimirad, S Safa, AH Bayani
physica status solidi (b) 253 (3), 559-565, 2016
Theoretical investigation on BeN2 monolayer for an efficient bifunctional water splitting catalyst
MRA Kishore, R Varunaa, A Bayani, K Larsson
Scientific Reports 10, 2020
Intercalation of Au Atoms into SiC(0001)/Buffer Interfaces–A First-Principles Density Functional Theory Study
A Bayani, K Larsson
ACS OMEGA 5 (24), 14842–14846, 2020
Simulation of Filed Effect Sensor Based on Graphene Nanoribbon to Detect Toxic NO Gas
A Jodat, AH Bayani
Silicon, 1-5, 2018
Influence of the hydrogen adsorption to the optical properties of boron nitride nanotubes
A Bayani
Acta Physica Polonica A 129 (3), 348-351, 2016
The influence by substrate morphology on the Rashba band splitting in graphene
A Bayani, MRA Kishore, K Larsson
Results in Physics, 103065, 2020
Boron Nitride-Graphene (BN-G) Bilayer as a Channel of Graphene Based Field Effect Transistor
M Vali, N Moezi, A Bayani
ECS Journal of Solid State Science and Technology 12 (2), 021001, 2023
A scheme of quantum tunnel field effect transistor based on armchair graphene nano-ribbon
M Vali, N Moezi, H Heidari, A Bayani
ECS Journal of Solid State Science and Technology 10 (9), 091012, 2021
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