Amirhossein Bayani
Amirhossein Bayani
Verified email at kemi.uu.se - Homepage
TitleCited byYear
Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
AH Bayani, D Dideban, M Vali, N Moezi
Semiconductor Science and Technology 31 (4), 045009, 2016
152016
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
AH Bayani, D Dideban, N Moezi
Journal of Computational Electronics 15 (2), 381-388, 2016
122016
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
AH Bayani, D Dideban, J Voves, N Moezi
Superlattices and Microstructures 105, 110-116, 2017
82017
Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor
AH Bayani, D Dideban, N Moezi
Superlattices and Microstructures 100, 198-208, 2016
72016
The study of the effect of increasing adsorbed hydrogen's atomic percentage on electronic properties of boron-nitride nanotube
AH Bayani, N Shahtahmassebi, DV Fakhrabad
Physica E: Low-dimensional Systems and Nanostructures 53, 168-172, 2013
72013
Theoretical logic performance estimation of Silicon, Germanium and SiGe nanowire Fin-Field Effect Transistor
MS Mobarakeh, S Omrani, M Vali, A Bayani, N Omrani
Superlattices and Microstructures 120, 578-587, 2018
62018
The effect of concentration of H2 physisorption on the current–voltage characteristic of armchair BN nanotubes in CNT–BNNT–CNT set
R Azimirad, AH Bayani, S Safa
Pramana 87 (4), 46, 2016
62016
Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the …
D Dideban, A Ketabi, M Vali, AH Bayani, H Heidari
Materials Science in Semiconductor Processing 80, 18-23, 2018
42018
Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)
AH Bayani, J Voves, D Dideban
Superlattices and Microstructures 113, 769-776, 2018
42018
Benchmarking performance of a gate-all-around germanium nanotube field effect transistor (GAA-GeNTFET) against GAA-CNTFET
AH Bayani, D Dideban, M Akbarzadeh, N Moezi
ECS Journal of Solid State Science and Technology 6 (4), M24-M28, 2017
42017
CO gas opto‐electronic sensor using semiconductor graphene nanoribbons: A first‐principles study
R Azimirad, S Safa, AH Bayani
physica status solidi (b) 253 (3), 559-565, 2016
22016
Simulation of Filed Effect Sensor Based on Graphene Nanoribbon to Detect Toxic NO Gas
A Jodat, AH Bayani
Silicon, 1-5, 2018
12018
Simulation Investigation of Siligene Nanoribbon as a Novel Gas Sensor with Strain Engineering: Sensitivity and Selectivity of Current-Voltage Characteristic
AJAH Bayani
ECS Journal of Solid State Science and Technology 6 (7), 83-87, 2017
12017
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Articles 1–13