Temperature effects in NAND flash memories: A comparison between 2-D and 3-D arrays D Resnati, A Goda, G Nicosia, C Miccoli, AS Spinelli, CM Compagnoni IEEE Electron Device Letters 38 (4), 461-464, 2017 | 62 | 2017 |
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories C Miccoli, CM Compagnoni, S Beltrami, AS Spinelli, A Visconti IEEE transactions on electron devices 58 (8), 2406-2414, 2011 | 58 | 2011 |
Investigation of the threshold voltage instability after distributed cycling in nanoscale NAND flash memory arrays CM Compagnoni, C Miccoli, R Mottadelli, S Beltrami, M Ghidotti, ... 2010 IEEE International Reliability Physics Symposium, 604-610, 2010 | 44 | 2010 |
Time dependent threshold-voltage fluctuations in NAND Flash memories: From basic physics to impact on array operation A Goda, C Miccoli, CM Compagnoni 2015 IEEE International Electron Devices Meeting (IEDM), 14.7. 1-14.7. 4, 2015 | 31 | 2015 |
Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part I: Instabilities GM Paolucci, CM Compagnoni, C Miccoli, AS Spinelli, AL Lacaita, ... IEEE Transactions on Electron Devices 61 (8), 2802-2810, 2014 | 24 | 2014 |
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays C Miccoli, GM Paolucci, CM Compagnoni, AS Spinelli, A Goda 2015 IEEE International Reliability Physics Symposium, MY. 9.1-MY. 9.6, 2015 | 22 | 2015 |
Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories C Miccoli, J Barber, CM Compagnoni, GM Paolucci, J Kessenich, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3B. 1.1-3B. 1.6, 2013 | 22 | 2013 |
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint—Part II: On-field operation and distributed-cycling effects GM Paolucci, CM Compagnoni, C Miccoli, AS Spinelli, AL Lacaita, ... IEEE Transactions on Electron Devices 61 (8), 2811-2819, 2014 | 21 | 2014 |
Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories C Miccoli, CM Compagnoni, AS Spinelli, AL Lacaita 2011 International Reliability Physics Symposium, MY. 5.1-MY. 5.6, 2011 | 20 | 2011 |
Assessment of distributed-cycling schemes on 45nm NOR flash memory arrays C Miccoli, CM Compagnoni, L Chiavarone, S Beltrami, AL Lacaita, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 2A. 1.1-2A. 1.7, 2012 | 18 | 2012 |
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories CM Compagnoni, C Miccoli, AL Lacaita, A Marmiroli, AS Spinelli, ... IEEE electron device letters 31 (11), 1196-1198, 2010 | 17 | 2010 |
A single-electron analysis of NAND Flash memory programming G Nicosia, GM Paolucci, CM Compagnoni, D Resnati, C Miccoli, ... 2015 IEEE International Electron Devices Meeting (IEDM), 14.8. 1-14.8. 4, 2015 | 11 | 2015 |
Programming memory devices A Goda, T Vali, C Miccoli, P Kalavade US Patent 10,217,515, 2019 | 10 | 2019 |
First detection of single-electron charging of the floating gate of NAND flash memory cells CM Compagnoni, GM Paolucci, C Miccoli, AS Spinelli, AL Lacaita, ... IEEE Electron Device Letters 36 (2), 132-134, 2014 | 9 | 2014 |
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories GM Paolucci, CM Compagnoni, C Miccoli, M Bertuccio, S Beltrami, ... 2014 IEEE International Reliability Physics Symposium, 2E. 2.1-2E. 2.6, 2014 | 9 | 2014 |
String current in decananometer NAND Flash arrays: A compact-modeling investigation GM Paolucci, C Miccoli, CM Compagnoni, AS Spinelli, AL Lacaita IEEE transactions on electron devices 59 (9), 2331-2337, 2012 | 8 | 2012 |
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND flash C Miccoli, CM Compagnoni, SM Amoroso, A Spessot, P Fantini, A Visconti, ... IEEE electron device letters 31 (11), 1202-1204, 2010 | 8 | 2010 |
A step ahead toward a new microscopic picture for charge trapping/detrapping in Flash memories D Resnati, CM Compagnoni, GM Paolucci, C Miccoli, J Barber, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 6C-3-1-6C-3-7, 2016 | 7 | 2016 |
Reliability characterization issues for nanoscale flash memories: a case study on 45-nm NOR devices C Miccoli, CM Compagnoni, L Chiavarone, S Beltrami, AL Lacaita, ... IEEE Transactions on Device and Materials Reliability 13 (2), 362-369, 2013 | 7 | 2013 |
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND flash memory arrays D Resnati, CM Compagnoni, GM Paolucci, C Miccoli, AS Spinelli, ... IEEE Electron Device Letters 36 (7), 678-680, 2015 | 6 | 2015 |