Ashish Baraskar
Ashish Baraskar
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Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
Ultralow resistance, nonalloyed Ohmic contacts to
AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
Memory hole size variation in a 3D stacked memory
L Pang, A Baraskar, Y Zhang, Y Dong
US Patent 9,812,462, 2017
InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology
U Singisetti, MA Wistey, GJ Burek, E Arkun, AK Baraskar, Y Sun, ...
physica status solidi c 6 (6), 1394-1398, 2009
Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data
A Baraskar, AC Gossard, MJW Rodwell
Journal of Applied Physics 114 (15), 154516, 2013
Effect of growth temperature on the magnetic, microwave, and cation inversion properties on thin films deposited by pulsed laser ablation deposition
CN Chinnasamy, SD Yoon, A Yang, A Baraskar, C Vittoria, VG Harris
Journal of applied physics 101 (9), 09M517, 2007
Ultra low contact resistivities for CMOS beyond 10-nm node
Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ...
IEEE electron device letters 34 (6), 723-725, 2013
Full band calculations of the intrinsic lower limit of contact resistivity
J Maassen, C Jeong, A Baraskar, M Rodwell, M Lundstrom
Applied Physics Letters 102 (11), 111605, 2013
Functionalization of FeCo alloy nanoparticles with highly dielectric amorphous oxide coatings
Q Nguyen, CN Chinnasamy, SD Yoon, S Sivasubramanian, T Sakai, ...
Journal of Applied Physics 103 (7), 07D532, 2008
Ex situ Ohmic contacts to
A Baraskar, MA Wistey, V Jain, E Lobisser, U Singisetti, G Burek, YJ Lee, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
1.0 THz fmaxInP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance
V Jain, JC Rode, HW Chiang, A Baraskar, E Lobisser, BJ Thibeault, ...
69th Device Research Conference, 271-272, 2011
Fabricating method of semiconductor integrated circuits
Y Shimamoto, M Hiratani, Y Matsui, S Yamamoto, T Nabatame, T Ando, ...
US Patent 7,259,058, 2007
Method of optimal power calibration
K Hsiao, S Liow
US Patent 6,937,548, 2005
First demonstration of high-Ge-content strained-Si1−xGex(x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and …
P Hashemi, K Balakrishnan, SU Engelmann, JA Ott, A Khakifirooz, ...
2014 IEEE International Electron Devices Meeting, 16.1. 1-16.1. 4, 2014
High-performance Si1−xGexchannel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
P Hashemi, M Kobayashi, A Majumdar, LA Yang, A Baraskar, ...
2013 Symposium on VLSI Circuits, T18-T19, 2013
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous
V Jain, E Lobisser, A Baraskar, BJ Thibeault, MJW Rodwell, Z Griffith, ...
IEEE electron device letters 32 (1), 24-26, 2010
Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for …
P Hashemi, K Balakrishnan, A Majumdar, A Khakifirooz, W Kim, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
High doping effects on in-situ Ohmic contacts to n-InAs
A Baraskar, V Jain, MA Wistey, U Singisetti, YJ Lee, B Thibeault, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
Apparatus and method for separating and purifying polynucleotides
D Gjerde, C Hanna, P Taylor, B Legendre, R Haefele
US Patent App. 10/121,552, 2002
Structure and method for message snooping in SCSI bus expanders
BA Young, JS Packer, WC Goh
US Patent 6,804,739, 2004
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