A. Rodriguez-Fernandez
A. Rodriguez-Fernandez
Paradigma Digital
Verifierad e-postadress på paradigmadigital.com
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A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
322017
Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices
A Rodriguez, MB Gonzalez, E Miranda, F Campabadal, J Suñe
Microelectronic Engineering 147, 75-78, 2015
162015
Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO2-Based ReRAM Devices
A Rodriguez-Fernandez, C Cagli, J Suñé, E Miranda
IEEE Electron Device Letters 39 (5), 656-659, 2018
142018
Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
A Rodriguez-Fernandez, S Aldana, F Campabadal, J Sune, E Miranda, ...
IEEE Transactions on Electron Devices 64 (8), 3159-3166, 2017
132017
Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices
A Rodriguez-Fernandez, C Cagli, L Perniola, J Suñé, E Miranda
Microelectronic Engineering 178, 61-65, 2017
102017
Characterization of HfO2-based devices with indication of second order memristor effects
A Rodriguez-Fernandez, C Cagli, L Perniola, E Miranda, J Suñé
Microelectronic Engineering 195, 101-106, 2018
52018
Waveform and frequency effects on reset transition in bipolar reram in flux-charge space
MM Al Chawa, A Rodriguez-Fernandez, M Bargallo, F Campabadal, ...
Proc. MEMRISYS, 2017
52017
SPICE model for the ramp rate effect in the reset characteristic of memristive devices
A Rodriguez-Fernandez, J Suñé, E Miranda, MB Gonzalez, ...
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS), 1-4, 2017
42017
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis
A Rodriguez-Fernandez, C Cagli, L Perniola, J Suñé, E Miranda
Microelectronics Reliability 76, 178-183, 2017
42017
SPICE simulation of 1T1R structures based on a logistic hysteresis operator
GA Patterson, A Rodriguez-Fernandez, J Suñé, E Miranda, C Cagli, ...
2017 Spanish Conference on Electron Devices (CDE), 1-4, 2017
42017
Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
FL Aguirre, A Rodriguez-Fernandez, SM Pazos, J Suñé, E Miranda, ...
IEEE Transactions on Electron Devices 66 (8), 3349-3355, 2019
32019
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory
A Rodriguez-Fernandez, J Muñoz-Gorriz, J Suñé, E Miranda
Microelectronics reliability 88, 142-146, 2018
32018
Breakdown time statistics of successive failure events in constant voltage-stressed Al2O3/HfO2 nanolaminates
A Rodriguez, MB Gonzalez, F Campabadal, J Suñé, E Miranda
Microelectronic Engineering 147, 85-88, 2015
32015
On the properties of conducting filament in ReRAM
X Lian, M Lanza, A Rodríguez, E Miranda, J Suñé
2014 12th IEEE International Conference on Solid-State and Integrated …, 2014
32014
Electrical characterization of multiple leakage current paths in HfO2/Al2O3-based nanolaminates
A Rodríguez, MB Gonzalez, F Campabadal, J Suñé, E Miranda
Microelectronics Reliability 55 (9-10), 1442-1445, 2015
22015
Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks
A Rodriguez-Fernandez, J Suñé, E Miranda, MB González, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
12017
Analysis and modeling of filamentary conduction in Hf0₂-based structures
A Rodríguez Fernández
2018
Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
A Rodriguez-Fernandez, I Íñiguez-de-la-Torre, Ó García-Pérez, S García, ...
Journal of Physics: Conference Series 647 (1), 012039, 2015
2015
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Artiklar 1–18