Francisco G. Ruiz
Francisco G. Ruiz
Tenured Professor, University of Granada
Verified email at ugr.es - Homepage
Title
Cited by
Cited by
Year
A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE transactions on electron devices 54 (12), 3369-3377, 2007
902007
Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz
Solid-State Electronics 54 (2), 131-136, 2010
512010
High photocurrent in gated graphene–silicon hybrid photodiodes
S Riazimehr, S Kataria, R Bornemann, P Haring Bolívar, FJG Ruiz, ...
ACS photonics 4 (6), 1506-1514, 2017
502017
Particle-Swarm optimization in antenna design: Optimization of log-periodic dipole arrays
MF Pantoja, AR Bretones, FG Ruiz, SG Garcia, RG Martin
IEEE Antennas and Propagation Magazine 49 (4), 34-47, 2007
442007
GA design of a thin-wire bow-tie antenna for GPR applications
CMJ Van Coevorden, AR Bretones, MF Pantoja, FJG Ruiz, SG Garcia, ...
IEEE Transactions on Geoscience and Remote Sensing 44 (4), 1004-1010, 2006
442006
Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators
IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz
Solid-State Electronics 52 (12), 1854-1860, 2008
372008
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
342010
The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures
C Sampedro-Matarín, F Gámiz, A Godoy, FJG Ruiz
IEEE transactions on electron devices 53 (11), 2703-2710, 2006
312006
Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators
FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gámiz
IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009
292009
An analytical model for square GAA MOSFETs including quantum effects
E Moreno, JB Roldan, FG Ruiz, D Barrera, A Godoy, F Gámiz
Solid-state electronics 54 (11), 1463-1469, 2010
282010
GA design of wire pre-fractal antennas and comparison with other euclidean geometries
MF Pantoja, FG Ruiz, AR Bretones, RG Martín, JM Gonzalez-Arbesu, ...
IEEE Antennas and Wireless Propagation Letters 2, 238-241, 2003
272003
Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, P Sánchez-Moreno, ...
Journal of Applied Physics 112 (8), 084512, 2012
252012
Surface roughness scattering model for arbitrarily oriented silicon nanowires
IM Tienda-Luna, FG Ruiz, A Godoy, B Biel, F Gámiz
Journal of Applied Physics 110 (8), 084514, 2011
232011
Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs
A Godoy, F Ruiz, C Sampedro, F Gámiz, U Ravaioli
Solid-state electronics 51 (9), 1211-1215, 2007
212007
On the numerical modeling of terahertz photoconductive antennas
E Moreno, MF Pantoja, FG Ruiz, JB Roldán, SG García
Journal of Infrared, Millimeter, and Terahertz Waves 35 (5), 432-444, 2014
192014
Analytical gate capacitance modeling of III–V nanowire transistors
EG Marin, FJG Ruiz, IM Tienda-Luna, A Godoy, F Gamiz
IEEE transactions on electron devices 60 (5), 1590-1599, 2013
182013
High responsivity and quantum efficiency of graphene/silicon photodiodes achieved by interdigitating Schottky and gated regions
S Riazimehr, S Kataria, JM Gonzalez-Medina, S Wagner, M Shaygan, ...
ACS Photonics 6 (1), 107-115, 2018
172018
A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs
FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gamiz
IEEE transactions on electron devices 57 (10), 2477-2483, 2010
172010
Design guidelines of laser reduced graphene oxide conformal thermistor for IoT applications
FJ Romero, A Rivadeneyra, V Toral, E Castillo, F García-Ruiz, ...
Sensors and Actuators A: Physical 274, 148-154, 2018
162018
Influence of orientation, geometry, and strain on electron distribution in silicon gate-all-around (GAA) MOSFETs
IM Tienda-Luna, FJG Ruiz, A Godoy, B Biel, F Gamiz
IEEE transactions on electron devices 58 (10), 3350-3357, 2011
162011
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