| Wearable microsensor array for multiplexed heavy metal monitoring of body fluids W Gao, HYY Nyein, Z Shahpar, HM Fahad, K Chen, S Emaminejad, ... Acs Sensors 1 (7), 866-874, 2016 | 344 | 2016 |
| High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors M Tosun, S Chuang, H Fang, AB Sachid, M Hettick, Y Lin, Y Zeng, ... ACS nano 8 (5), 4948-4953, 2014 | 343 | 2014 |
| Monolithic 3D CMOS using layered semiconductors AB Sachid, M Tosun, SB Desai, CY Hsu, DH Lien, SR Madhvapathy, ... Advanced Materials 28 (13), 2547-2554, 2016 | 142 | 2016 |
| Direct growth of single-crystalline III–V semiconductors on amorphous substrates K Chen, R Kapadia, A Harker, S Desai, JS Kang, S Chuang, M Tosun, ... Nature communications 7 (1), 1-6, 2016 | 68 | 2016 |
| Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells W Hsu, CM Sutter-Fella, M Hettick, L Cheng, S Chan, Y Chen, Y Zeng, ... Scientific reports 5, 16028, 2015 | 67 | 2015 |
| High-performance InAlN/GaN HEMTs on silicon substrate with high f T× L g P Cui, A Mercante, G Lin, J Zhang, P Yao, DW Prather, Y Zeng Applied Physics Express 12 (10), 104001, 2019 | 45 | 2019 |
| 600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fTx BVCEO≫ 2.5 THz-V at Room Temperature HG Liu, O Ostinelli, Y Zeng, CR Bolognesi 2007 IEEE International Electron Devices Meeting, 667-670, 2007 | 43 | 2007 |
| Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes L Zheng, X Zhang, Y Zeng, SR Tatavarti, SP Watkins, CR Bolognesi, ... IEEE photonics technology letters 17 (3), 651-653, 2005 | 41 | 2005 |
| InAlN/GaN HEMT on Si With fmax= 270 GHz P Cui, M Jia, H Chen, G Lin, J Zhang, L Gundlach, JQ Xiao, Y Zeng IEEE Transactions on Electron Devices, 2021 | 27 | 2021 |
| Quantum well InAs/AlSb/GaSb vertical tunnel FET with HSQ mechanical support Y Zeng, CI Kuo, C Hsu, M Najmzadeh, A Sachid, R Kapadia, C Yeung, ... IEEE Transactions on Nanotechnology 14 (3), 580-584, 2015 | 27 | 2015 |
| High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With HG Liu, O Ostinelli, YP Zeng, CR Bolognesi IEEE Electron Device Letters 28 (10), 852-855, 2007 | 27 | 2007 |
| Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions Y Zeng, CI Kuo, R Kapadia, CY Hsu, A Javey, C Hu Journal of Applied Physics 114 (2), 024502, 2013 | 22 | 2013 |
| InP/GaAsSb DHBTs with 500-GHz maximum oscillation frequency R Lövblom, R Flückiger, Y Zeng, O Ostinelli, AR Alt, H Benedickter, ... IEEE electron device letters 32 (5), 629-631, 2011 | 19 | 2011 |
| High performance anatase-TiO2 thin film transistors with a two-step oxidized TiO2 channel and plasma enhanced atomic layer-deposited ZrO2 gate dielectric J Zhang, P Cui, G Lin, Y Zhang, MG Sales, M Jia, Z Li, C Goodwin, ... Applied Physics Express 12 (9), 096502, 2019 | 16 | 2019 |
| Scaling Behavior of InAlN/GaN HEMTs on Silicon for RF Applications P Cui, Y Zeng | 15 | 2022 |
| Transition from Hopping to Band-like Transport in Weakly Coupled Multilayer MoS2 Field Effect Transistors K Huang, M Zhao, B Sun, X Liu, J Liu, H Chang, Y Zeng, H Liu ACS Applied Electronic Materials 2 (4), 971-979, 2020 | 15 | 2020 |
| Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors Peng Cui1 , Jie Zhang1 , Tzu-Yi Yang2 , Hang Chen3 , Haochen Zhao1 ... Journal of Physics D 53, 065103, 2020 | 15* | 2020 |
| Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors P Cui, J Zhang, TY Yang, H Chen, H Zhao, G Lin, L Wei, JQ Xiao, ... Journal of Physics D: Applied Physics 53 (6), 065103, 2019 | 15 | 2019 |
| 400-GHz InP/GaAsSb DHBTs with low-noise microwave performance Y Zeng, O Ostinelli, R Lövblom, AR Alt, H Benedickter, CR Bolognesi IEEE electron device letters 31 (10), 1122-1124, 2010 | 15 | 2010 |
| Emitter-size effects and ultimate scalability of InP: GaInP/GaAsSb/InP DHBTs HG Liu, O Ostinelli, YP Zeng, CR Bolognesi IEEE Electron Device Letters 29 (6), 546-548, 2008 | 15 | 2008 |
Prof. Dr. Colombo BolognesiETH Zurich, Chair, Millimeter-Wave ElectronicsVerified email at mwe.ee.ethz.ch
