Rajib Rahman
Rajib Rahman
Associate Professor of Physics, University of New South Wales
Verifierad e-postadress på unsw.edu.au - Startsida
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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ...
Nature Physics 4 (8), 656-661, 2008
3972008
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks
G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ...
IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007
2632007
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
1732015
High precision quantum control of single donor spins in silicon
R Rahman, CJ Wellard, FR Bradbury, M Prada, JH Cole, G Klimeck, ...
Physical review letters 99 (3), 036403, 2007
1462007
Electrically Tunable Bandgaps in Bilayer MoS2
T Chu, H Ilatikhameneh, G Klimeck, R Rahman, Z Chen
Nano letters 15 (12), 8000-8007, 2015
1452015
Silicon quantum processor with robust long-distance qubit couplings
G Tosi, FA Mohiyaddin, V Schmitt, S Tenberg, R Rahman, G Klimeck, ...
Nature communications 8 (1), 1-11, 2017
1272017
Electrically controlling single-spin qubits in a continuous microwave field
A Laucht, JT Muhonen, FA Mohiyaddin, R Kalra, JP Dehollain, S Freer, ...
Science advances 1 (3), e1500022, 2015
1252015
Spin blockade and exchange in Coulomb-confined silicon double quantum dots
B Weber, YHM Tan, S Mahapatra, TF Watson, H Ryu, R Rahman, ...
Nature nanotechnology 9 (6), 430-435, 2014
1232014
Spin readout and addressability of phosphorus-donor clusters in silicon
H Büch, S Mahapatra, R Rahman, A Morello, MY Simmons
Nature communications 4 (1), 1-6, 2013
1102013
Few-layer phosphorene: An ideal 2D material for tunnel transistors
TA Ameen, H Ilatikhameneh, G Klimeck, R Rahman
Scientific reports 6 (1), 1-7, 2016
942016
Orbital Stark effect and quantum confinement transition of donors in silicon
R Rahman, GP Lansbergen, SH Park, J Verduijn, G Klimeck, S Rogge, ...
Physical Review B 80 (16), 165314, 2009
892009
Spatially resolving valley quantum interference of a donor in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature materials 13 (6), 605-610, 2014
832014
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
822015
Dielectric engineered tunnel field-effect transistor
H Ilatikhameneh, TA Ameen, G Klimeck, J Appenzeller, R Rahman
IEEE Electron Device Letters 36 (10), 1097-1100, 2015
812015
Saving Moore’s law down to 1 nm channels with anisotropic effective mass
H Ilatikhameneh, T Ameen, B Novakovic, Y Tan, G Klimeck, R Rahman
Scientific reports 6 (1), 1-6, 2016
682016
Quantum simulation of the Hubbard model with dopant atoms in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature communications 7 (1), 1-6, 2016
662016
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures
C Zheng, Q Zhang, B Weber, H Ilatikhameneh, F Chen, H Sahasrabudhe, ...
ACS nano 11 (3), 2785-2793, 2017
602017
Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors
R Rahman, SH Park, TB Boykin, G Klimeck, S Rogge, LCL Hollenberg
Physical Review B 80 (15), 155301, 2009
602009
Multimillion atom simulations with NEMO 3-D
S Ahmed, N Kharche, R Rahman, M Usman, S Lee, H Ryu, H Bae, ...
arXiv preprint arXiv:0901.1890, 2009
552009
Complementary black phosphorus tunneling field-effect transistors
P Wu, T Ameen, H Zhang, LA Bendersky, H Ilatikhameneh, G Klimeck, ...
ACS nano 13 (1), 377-385, 2018
502018
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