| Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning S Mogg, N Chitica, U Christiansson, R Schatz, P Sundgren, C Asplund, ... IEEE Journal of Quantum Electronics 40 (5), 453-462, 2004 | 71 | 2004 |
| Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors L Höglund, C Asplund, Q Wang, S Almqvist, H Malm, E Petrini, ... Applied physics letters 88 (21), 2006 | 55 | 2006 |
| Manufacturability of type-II InAs/GaSb superlattice detectors for infrared imaging L Höglund, C Asplund, RM von Würtemberg, H Kataria, A Gamfeldt, ... Infrared Physics & Technology 84, 28-32, 2017 | 45 | 2017 |
| 1260 nm InGaAs vertical-cavity lasers C Asplund, P Sundgren, S Mogg, M Hammar, U Christiansson, ... Electronics Letters 38 (13), 635-636, 2002 | 45 | 2002 |
| Doping-induced losses in AlAs/GaAs distributed Bragg reflectors C Asplund, S Mogg, G Plaine, F Salomonsson, N Chitica, M Hammar Journal of Applied Physics 90 (2), 794-800, 2001 | 42 | 2001 |
| Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice L Largeau, C Bondoux, G Patriarche, C Asplund, A Fujioka, ... Applied Physics Letters 79 (12), 1795-1797, 2001 | 34 | 2001 |
| Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy L Höglund, E Petrini, C Asplund, H Malm, JY Andersson, PO Holtz Applied surface science 252 (15), 5525-5529, 2006 | 33 | 2006 |
| Performance of mid-wave T2SL detectors with heterojunction barriers C Asplund, RM von Würtemberg, D Lantz, H Malm, H Martijn, E Plis, ... Infrared Physics & Technology 59, 22-27, 2013 | 28 | 2013 |
| The nature of optical transitions in Ga0. 64In0. 36As1− xNx/GaAs single quantum wells with low nitrogen content (x≤ 0.008) R Kudrawiec, G Sęk, K Ryczko, J Misiewicz, P Sundgren, C Asplund, ... Solid state communications 127 (9-10), 613-618, 2003 | 27 | 2003 |
| A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure L Ouattara, A Mikkelsen, E Lundgren, L Höglund, C Asplund, ... Journal of applied physics 100 (4), 2006 | 24 | 2006 |
| Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers F Salomonsson, C Asplund, P Sundgren, GY Plaine, S Mogg, M Hammar Electronics Letters 37 (15), 957-958, 2001 | 23 | 2001 |
| Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures O Gustafsson, A Karim, J Berggren, Q Wang, C Reuterskiöld-Hedlund, ... Optics Express 20 (19), 21264-21271, 2012 | 20 | 2012 |
| Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-µm GaInNAs/GaAs single quantum well lasers GY Plaine, C Asplund, P Sundgren, S Mogg, M Hammar Japanese journal of applied physics 41 (2S), 1040, 2002 | 20 | 2002 |
| QWIPs at IRnova, a status update H Martijn, A Gamfeldt, C Asplund, S Smuk, H Kataria, E Costard Infrared Technology and Applications XLII 9819, 322-332, 2016 | 19 | 2016 |
| Modeling tools for design of type-II superlattice photodetectors C Asplund, RM von Würtemberg, L Höglund Infrared Physics & Technology 84, 21-27, 2017 | 17 | 2017 |
| Energy level scheme of quantum-dots-in-a-well infrared photodetector structures L Höglund, KF Karlsson, PO Holtz, H Pettersson, ME Pistol, Q Wang, ... Physical Review B 82 (3), 035314, 2010 | 17 | 2010 |
| Energy level scheme of quantum-dots-in-a-well infrared photodetector structures L Höglund, KF Karlsson, PO Holtz, H Pettersson, ME Pistol, Q Wang, ... Physical Review B 82 (3), 035314, 2010 | 17 | 2010 |
| High-performance MWIR type-II superlattice detectors H Martijn, C Asplund, RM von Würtemberg, H Malm Infrared Technology and Applications XXXIX 8704, 284-292, 2013 | 16 | 2013 |
| Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared … L Höglund, JB Rodriguez, RM von Würtemberg, S Naureen, R Ivanov, ... Infrared Physics & Technology 95, 158-163, 2018 | 15 | 2018 |
| Advantages of T2SL: results from production and new development at IRnova L Höglund, C Asplund, RM von Würtemberg, A Gamfeldt, H Kataria, ... Infrared Technology and Applications XLII 9819, 250-259, 2016 | 15 | 2016 |
