| P-type polar transition of chemically doped multilayer MoS2 transistor X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo arXiv preprint arXiv:1604.08162, 2015 | 239 | 2015 |
| A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS2–Metal Junction Z Yang, C Kim, KY Lee, M Lee, S Appalakondaiah, CH Ra, K Watanabe, ... Advanced Materials 31 (25), 1808231, 2019 | 192 | 2019 |
| Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni (111) foil M Huang, PV Bakharev, ZJ Wang, M Biswal, Z Yang, S Jin, B Wang, ... Nature nanotechnology 15 (4), 289-295, 2020 | 179 | 2020 |
| Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ... Acs Nano 12 (6), 6117-6127, 2018 | 150 | 2018 |
| High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ... Advanced Functional Materials 27 (4), 1604025, 2017 | 55 | 2017 |
| Three-dimensional hierarchically porous MoS2 foam as high-rate and stable lithium-ion battery anode X Wei, CC Lin, C Wu, N Qaiser, Y Cai, AY Lu, K Qi, JH Fu, YH Chiang, ... nature communications 13 (1), 6006, 2022 | 52 | 2022 |
| Impact ionization by hot carriers in a black phosphorus field effect transistor F Ahmed, YD Kim, Z Yang, P He, E Hwang, H Yang, J Hone, WJ Yoo Nature communications 9 (1), 3414, 2018 | 48 | 2018 |
| Resonant tunnelling diodes based on twisted black phosphorus homostructures PK Srivastava, Y Hassan, DJP de Sousa, Y Gebredingle, M Joe, F Ali, ... Nature Electronics 4 (4), 269-276, 2021 | 45 | 2021 |
| Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions SB Mitta, F Ali, Z Yang, I Moon, F Ahmed, TJ Yoo, BH Lee, WJ Yoo ACS applied materials & interfaces 12 (20), 23261-23271, 2020 | 43 | 2020 |
| Dielectric dispersion and high field response of multilayer hexagonal boron nitride F Ahmed, S Heo, Z Yang, F Ali, CH Ra, HI Lee, T Taniguchi, J Hone, ... Advanced Functional Materials 28 (40), 1804235, 2018 | 43 | 2018 |
| High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2 C Kim, S Issarapanacheewin, I Moon, KY Lee, C Ra, S Lee, Z Yang, ... Advanced Electronic Materials 6 (3), 1900964, 2020 | 41 | 2020 |
| Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts TD Ngo, Z Yang, M Lee, F Ali, I Moon, DG Kim, T Taniguchi, K Watanabe, ... Advanced Electronic Materials 7 (5), 2001212, 2021 | 37 | 2021 |
| Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping TD Ngo, M Lee, Z Yang, F Ali, I Moon, WJ Yoo Advanced Electronic Materials 6 (10), 2000616, 2020 | 24 | 2020 |
| Energy dissipation in black phosphorus heterostructured devices F Ali, F Ahmed, Z Yang, I Moon, M Lee, Y Hassan, C Lee, WJ Yoo Advanced Materials Interfaces 6 (2), 1801528, 2019 | 14 | 2019 |
| Graphdiyne-based nanofilms for compliant on-skin sensing Y Cai, J Shen, JH Fu, N Qaiser, C Chen, CC Tseng, M Hakami, Z Yang, ... ACS nano 16 (10), 16677-16689, 2022 | 13 | 2022 |
| Electronic device including 2-dimensional material S Park, J Lee, RA Changho, YOO Wonjong, F Ahmed, Z Yang, ... US Patent 10,269,975, 2019 | 7 | 2019 |
| Electronic device including two-dimensional material NAM Seunggeol, YOO Wonjong, Z Yang US Patent 10,516,054, 2019 | 3 | 2019 |
| Achieving High Performance Ambipolar MoS₂ One-Dimensional Electrical Contact FET Through Plasma Etching Z Yang, WJ Yoo 한국표면공학회 학술발표회 초록집, 45-45, 2017 | | 2017 |
| Depin MoS2 Fermi Level via One-Dimensional Contact Z Yang, CH Ra, WJ Yoo APS March Meeting Abstracts 2017, V1. 009, 2017 | | 2017 |
| One-Dimensional Electrical Contact to Molybdenum Disulfide Z Yang, C Ra, F Ahmed, D Lee, M Choi, X Liu, D Qu, WJ Yoo APS March Meeting Abstracts 2016, C26. 010, 2016 | | 2016 |
