| Reduced electric field in junctionless transistors JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (7), 073510, 2010 | 298 | 2010 |
| Low subthreshold slope in junctionless multigate transistors CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (10), 102106, 2010 | 239 | 2010 |
| Semiconductor-on-insulator materials for nanoelectronics applications A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko Springer, 2011 | 114 | 2011 |
| Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals A Nazarov, JM Sun, W Skorupa, RA Yankov, IN Osiyuk, IP Tjagulskii, ... Applied Physics Letters 86 (15), 151914, 2005 | 73 | 2005 |
| Solid-State Electron LW Wu, SJ Chang, YK Su, RW Chuang, YP Hsu, CH Kuo, WC Lai, ... Solid State Electron, 1970 | 60 | 1970 |
| Improvments in railway communication via GSM-R K Kastell, S Bug, A Nazarov, R Jakoby 2006 IEEE 63rd Vehicular Technology Conference 6, 3026-3030, 2006 | 53 | 2006 |
| Color control of white photoluminescence from carbon-incorporated silicon oxide Y Ishikawa, AV Vasin, J Salonen, S Muto, VS Lysenko, AN Nazarov, ... Journal of Applied Physics 104 (8), 083522, 2008 | 49 | 2008 |
| On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part I—Effect of gate-voltage-dependent mobility T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre IEEE Transactions on Electron Devices 58 (12), 4172-4179, 2011 | 48 | 2011 |
| Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi Applied Physics Letters 101 (21), 213502, 2012 | 45 | 2012 |
| On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part II—Effect of drain voltage T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre IEEE Transactions on Electron Devices 58 (12), 4180-4188, 2011 | 43 | 2011 |
| Trapping of negative and positive charges in ion implanted silicon dioxide layers subjected to high-field electron injection AN Nazarov, T Gebel, L Rebohle, W Skorupa, IN Osiyuk, VS Lysenko Journal of applied physics 94 (7), 4440-4448, 2003 | 43 | 2003 |
| Low-temperature reduction of graphene oxide: electrical conductance and scanning kelvin probe force microscopy OM Slobodian, PM Lytvyn, AS Nikolenko, VM Naseka, OY Khyzhun, ... Nanoscale research letters 13 (1), 1-11, 2018 | 41 | 2018 |
| Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure L Rebohle, J Lehmann, S Prucnal, A Kanjilal, A Nazarov, I Tyagulskii, ... Applied Physics Letters 93 (7), 071908, 2008 | 41 | 2008 |
| On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclusters JM Sun, W Skorupa, T Dekorsy, M Helm, AN Nazarov Optical Materials 27 (5), 1050-1054, 2005 | 41 | 2005 |
| Random telegraph-signal noise in junctionless transistors AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (9), 092111, 2011 | 40 | 2011 |
| Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities T Rudenko, V Kilchytska, N Collaert, M Jurczak, A Nazarov, D Flandre IEEE transactions on electron devices 55 (12), 3532-3541, 2008 | 40 | 2008 |
| Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides T Rudenko, V Kilchytska, S Burignat, JP Raskin, F Andrieu, O Faynot, ... Solid-State Electronics 54 (2), 164-170, 2010 | 39 | 2010 |
| Kinetics of structural and phase transformations in thin SiO x films in the course of a rapid thermal annealing VA Dan’ko, IZ Indutnyi, VS Lysenko, IY Maidanchuk, VI Min’ko, ... Semiconductors 39 (10), 1197-1203, 2005 | 34 | 2005 |
| Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas Microelectronic Engineering 109, 326-329, 2013 | 33 | 2013 |
| The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices AN Nazarov, SI Tiagulskyi, IP Tyagulskyy, VS Lysenko, L Rebohle, ... Journal of Applied Physics 107 (12), 123112, 2010 | 32 | 2010 |
Valeriya KilchytskaUniversité catholique de LouvainVerified email at uclouvain.be
