Daryoosh Dideban
Daryoosh Dideban
Associate professor of electronics and electrical engineering, University of Kashan
Verified email at kashanu.ac.ir - Homepage
Cited by
Cited by
Statistical-variability compact-modeling strategies for BSIM4 and PSP
B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov
IEEE Design & Test of Computers 27 (2), 26-35, 2010
A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering
MS Mobarakeh, N Moezi, M Vali, D Dideban
Superlattices and Microstructures 100, 1221-1229, 2016
Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
AH Bayani, D Dideban, M Vali, N Moezi
Semiconductor Science and Technology 31 (4), 045009, 2016
A novel integrated SET based inverter for nano power electronic applications
N Moezi, D Dideban, A Ketabi
Am. J. Eng. Applied Sci 1, 219-222, 2008
An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor
V KhademHosseini, D Dideban, MT Ahmadi, R Ismail
AEU-International Journal of Electronics and Communications 90, 97-102, 2018
Comparative study of nanoribbon field effect transistors based on silicene and graphene
F Salimian, D Dideban
Materials Science in Semiconductor Processing 93, 92-98, 2019
A novel silicon on insulator MOSFET with an embedded heat pass path and source side channel doping
M Karbalaei, D Dideban
Superlattices and Microstructures 90, 53-67, 2016
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
AH Bayani, D Dideban, N Moezi
Journal of Computational Electronics 15 (2), 381-388, 2016
Modeling and simulation of transistor and circuit variability and reliability
A Asenov, B Cheng, D Dideban, U Kovac, N Moezi, C Millar, G Roy, ...
IEEE Custom Integrated Circuits Conference 2010, 1-8, 2010
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
AH Bayani, D Dideban, J Voves, N Moezi
Superlattices and Microstructures 105, 110-116, 2017
Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor
AH Bayani, D Dideban, N Moezi
Superlattices and Microstructures 100, 198-208, 2016
Silicene field effect transistor with high on/off current ratio and good current saturation
M Vali, D Dideban, N Moezi
Journal of computational electronics 15 (1), 138-143, 2016
Single Electron Transistor Scheme Based on Multiple Quantum Dot Islands: Carbon Nanotube and Fullerene
HH V Khademhosseini, D Dideban, MT Ahmadi, R Ismail
ECS Journal of Solid State Science and Technology 7 (10), M145-M152, 2018
A scheme for a topological insulator field effect transistor
M Vali, D Dideban, N Moezi
Physica E: Low-dimensional Systems and Nanostructures 69, 360-363, 2015
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study
N Moezi, D Dideban, B Cheng, S Roy, A Asenov
Microelectronics Journal 44 (1), 7-14, 2013
A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method
U Kovac, D Dideban, B Cheng, N Moezi, G Roy, A Asenov
2010 International Conference on Simulation of Semiconductor Processes and …, 2010
Improvement in electrical characteristics of Silicon on Insulator (SOI) transistor using graphene material
M Karbalaei, D Dideban, H Heidari
Results in Physics 15, 102806, 2019
A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value of Ion/Ioff
F Salimian, D Dideban
ECS Journal of Solid State Science and Technology 7 (2), 2018
Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study
M Karbalaei, D Dideban, H Heidari
Results in Physics 16, 102823, 2020
Impact analysis of statistical variability on the accuracy of a propagation delay time compact model in nano-CMOS technology
H Jooypa, D Dideban
Journal of Computational Electronics 17 (1), 192-204, 2018
The system can't perform the operation now. Try again later.
Articles 1–20