Daryoosh Dideban
Daryoosh Dideban
Associate professor of electronics and electrical engineering, University of Kashan
Verified email at kashanu.ac.ir - Homepage
TitleCited byYear
Statistical-variability compact-modeling strategies for BSIM4 and PSP
B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov
IEEE Design & Test of Computers 27 (2), 26-35, 2010
632010
A novel integrated SET based inverter for nano power electronic applications
N Moezi, D Dideban, A Ketabi
Am. J. Engg. & Applied Sci 1 (3), 219-222, 2008
242008
Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
AH Bayani, D Dideban, M Vali, N Moezi
Semiconductor Science and Technology 31 (4), 045009, 2016
162016
Modeling and simulation of transistor and circuit variability and reliability
A Asenov, B Cheng, D Dideban, U Kovac, N Moezi, C Millar, G Roy, ...
IEEE Custom Integrated Circuits Conference 2010, 1-8, 2010
152010
A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering
MS Mobarakeh, N Moezi, M Vali, D Dideban
Superlattices and Microstructures 100, 1221-1229, 2016
142016
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
AH Bayani, D Dideban, N Moezi
Journal of Computational Electronics 15 (2), 381-388, 2016
122016
A novel Silicon on Insulator MOSFET with an embedded heat pass path and source side channel doping
M Karbalaei, D Dideban
Superlattices and Microstructures 90, 53-67, 2016
112016
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study
N Moezi, D Dideban, B Cheng, S Roy, A Asenov
Microelectronics Journal 44 (1), 7-14, 2013
102013
A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method
U Kovac, D Dideban, B Cheng, N Moezi, G Roy, A Asenov
2010 International Conference on Simulation of Semiconductor Processes and …, 2010
102010
An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor
V KhademHosseini, D Dideban, MT Ahmadi, R Ismail
AEU-International Journal of Electronics and Communications 90, 97-102, 2018
92018
A scheme for a topological insulator field effect transistor
M Vali, D Dideban, N Moezi
Physica E: Low-dimensional Systems and Nanostructures 69, 360-363, 2015
92015
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
AH Bayani, D Dideban, J Voves, N Moezi
Superlattices and Microstructures 105, 110-116, 2017
82017
Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor
AH Bayani, D Dideban, N Moezi
Superlattices and Microstructures 100, 198-208, 2016
82016
Silicene field effect transistor with high on/off current ratio and good current saturation
M Vali, D Dideban, N Moezi
Journal of Computational Electronics 15 (1), 138-143, 2016
72016
Benchmarking the accuracy of PCA generated statistical compact model parameters against physical device simulation and directly extracted statistical parameters
B Cheng, N Moezi, D Dideban, G Roy, S Roy, A Asenov
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
72009
Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the …
D Dideban, A Ketabi, M Vali, AH Bayani, H Heidari
Materials Science in Semiconductor Processing 80, 18-23, 2018
62018
Impact analysis of statistical variability on the accuracy of a propagation delay time compact model in nano-CMOS technology
H Jooypa, D Dideban
Journal of Computational Electronics 17 (1), 192-204, 2018
62018
A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value of Ion/Ioff
F Salimian, D Dideban
ECS Journal of Solid State Science and Technology 7 (2), 2018
52018
Quantum well resonant tunneling FET based on topological insulator
M Vali, D Dideban, N Moezi
Superlattices and Microstructures 100, 1256-1262, 2016
52016
Comparative study of nanoribbon field effect transistors based on silicene and graphene
F Salimian, D Dideban
Materials Science in Semiconductor Processing 93, 92-98, 2019
42019
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Articles 1–20