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Jihan Capulong
Jihan Capulong
University at Albany
Verifierad e-postadress på intel.com
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Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation
SM Bishop, H Bakhru, JO Capulong, NC Cady
Applied Physics Letters 100 (14), 2012
162012
Effect of crystallinity on endurance and switching behavior of HfOx-based resistive memory devices
JO Capulong, BD Briggs, SM Bishop, MQ Hovish, RJ Matyi, NC Cady
2012 IEEE International Integrated Reliability Workshop Final Report, 22-25, 2012
102012
Reliability of fully-integrated nanoscale ReRAM/CMOS combinations as a function of on-wafer current control
K Beckmann, J Holt, J Capulong, S Lombardo, NC Cady, J Van Nostrand
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014
72014
Ion implantation synthesis and conduction of tantalum oxide resistive memory layers
SM Bishop, BD Briggs, PZ Rice, JO Capulong, H Bakhru, NC Cady
Journal of Vacuum Science & Technology B 31 (1), 2013
52013
Comparison of HfOx-based resistive memory devices with crystalline and amorphous active layers
BD Briggs, SM Bishop, JO Capulong, MQ Hovish, RJ Matyi, NC Cady
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
52011
Impact of argon-ambient annealing in hafnium oxide resistive random access memory
JO Capulong, BD Briggs, NC Cady
72nd Device Research Conference, 113-114, 2014
12014
Oxide Defect Engineering Methods for Valence Change (VCM) Resistive Random Access Memories
JO Capulong
State University of New York at Albany, 2014
2014
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Artiklar 1–7