| Interface trap-induced nonideality in as-deposited Ni/4H-SiC Schottky barrier diode SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar IEEE Transactions on Electron Devices 62 (2), 615-621, 2014 | 40 | 2014 |
| Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers H Song, T Rana, TS Sudarshan Journal of crystal growth 320 (1), 95-102, 2011 | 31 | 2011 |
| Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy T Rana, MVS Chandrashekhar, TS Sudarshan Physica Status Solidi A 209 (12), 2455-2462, 2012 | 29 | 2012 |
| Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar Journal of Physics D: Applied Physics 47 (29), 295102, 2014 | 26 | 2014 |
| Epitaxial growth of graphene on SiC by Si selective etching using SiF4 in an inert ambient T Rana, MVS Chandrashekhar, K Daniels, T Sudarshan Japanese journal of applied physics 54 (3), 030304, 2015 | 21 | 2015 |
| Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy T Rana, MVS Chandrashekhar, TS Sudarshan Journal of crystal growth 380, 61-67, 2013 | 19 | 2013 |
| Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films TS Sudarshan, H Song, T Rana US Patent 8,900,979, 2014 | 13 | 2014 |
| Trade-off between parasitic deposition and SiC homoepitaxial growth rate using halogenated Si-precursors TS Sudarshan, T Rana, H Song, MVS Chandrashekhar ECS Journal of Solid State Science and Technology 2 (8), N3079, 2013 | 12 | 2013 |
| Comparison of 4H silicon carbide epitaxial growths at various growth pressures using dicholorosilane and silane gases T Rana, HZ Song, MVS Chandrashekhar, TS Sudarshan Materials Science Forum 717, 117-120, 2012 | 12 | 2012 |
| Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1 offcut substrate using dichlorosilane as Si precursor SU Omar, MVS Chandrashekhar, IA Chowdhury, TA Rana, TS Sudarshan Journal of Applied Physics 113 (18), 2013 | 10 | 2013 |
| Behavior of particles in the growth reactor and their effect on silicon carbide epitaxial growth T Rana, HZ Song, MVS Chandrashekhar, TS Sudarshan Materials Science Forum 717, 153-156, 2012 | 8 | 2012 |
| Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films TS Sudarshan, H Song, T Rana US Patent 9,644,288, 2017 | 7 | 2017 |
| SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4) T Rana, MVS Chandrashekhar, K Daniels, T Sudarshan Journal of Electronic Materials 45, 2019-2024, 2016 | 7 | 2016 |
| Comparison of SiC epitaxial growth from dichlorosilane and tetrafluorosilane precursors H Song, T Rana, MVS Chandrashekhar, SU Omar, TS Sudarshan ECS Transactions 58 (4), 97, 2013 | 6 | 2013 |
| Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films TS Sudarshan, H Song, T Rana US Patent 9,644,287, 2017 | 5 | 2017 |
| High quality silicon carbide epitaxial growth by novel fluorosilane gas chemistry for next generation high power electronics TA Rana University of South Carolina, 2013 | 4 | 2013 |
| In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors HZ Song, SU Omar, T Rana, MVS Chandrashekhar, TS Sudarshan Materials Science Forum 717, 121-124, 2012 | 3 | 2012 |
| Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy T Rana, GY Chung, S Anderson, I Manning, W Bowen, E Sanchez Materials Science Forum 963, 119-122, 2019 | 2 | 2019 |
| Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions T Rana, J Wu, G Chung, K Moeggenborg, M Gave Defect and Diffusion Forum 425, 63-68, 2023 | 1 | 2023 |
| Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy T Rana, G Chung, A Soukhojak, MK Ju, M Gave, E Sanchez Materials Science Forum 1062, 99-103, 2022 | 1 | 2022 |
Mvs ChandrashekharUniversity of South CarolinaVerified email at cec.sc.edu
