Arash Salemi
TitleCited byYear
5.8-kV implantation-free 4H-SiC BJT with multiple-shallow-trench junction termination extension
H Elahipanah, A Salemi, CM Zetterling, M Östling
IEEE Electron Device Letters 36 (2), 168-170, 2014
232014
15 kV-class implantation-free 4H-SiC BJTs with record high current gain
A Salemi, H Elahipanah, K Jacobs, CM Zetterling, M Östling
IEEE Electron Device Letters 39 (1), 63-66, 2017
152017
Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs
A Salemi, H Elahipanah, CM Zetterling, M Ostling
Electron Device Letters, IEEE 36 (10), 2015
152015
Area-and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance
A Salemi, H Elahipanah, G Malm, CM Zetterling, M Östling
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
152015
Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes
A Salemi, H Elahipanah, B Buono, A Hallén, JU Hassan, P Bergman, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
112015
Area-optimized JTE for 4.5 kV non ion-implanted 4H-SiC BJT
A Salemi, H Elahipanah, B Buono, CM Zetterling, M Östling
Materials Science Forum 740, 974-977, 2013
102013
500° C high current 4H-SiC lateral BJTs for high-temperature integrated circuits
H Elahipanah, S Kargarrazi, A Salemi, M Östling, CM Zetterling
IEEE Electron Device Letters 38 (10), 1429-1432, 2017
92017
Kinetic modeling of low temperature epitaxy growth of SiGe using disilane and digermane
M Kolahdouz, A Salemi, M Moeen, M Östling, HH Radamson
Journal of The Electrochemical Society 159 (5), H478-H481, 2012
92012
Modification of etched junction termination extension for the high voltage 4H-SiC power devices
H Elahipanah, A Salemi, CM Zetterling, M Östling
Materials Science Forum 858, 978-981, 2016
82016
A wafer-scale Ni-salicide contact technology on n-type 4H-SiC
H Elahipanah, A Asadollahi, M Ekström, A Salemi, CM Zetterling, ...
ECS Journal of Solid State Science and Technology 6 (4), P197-P200, 2017
72017
Intertwined design: A novel lithographic method to realize area efficient high-voltage SiC BJTs and Darlington transistors
H Elahipanah, A Salemi, CM Zetterling, M Östling
IEEE Transactions on Electron Devices 63 (11), 4366-4372, 2016
72016
Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC
A Salemi, B Buono, A Hallén, J Hassan, P Bergman, CM Zetterling, ...
Materials Science Forum 778, 836-840, 2014
72014
High temperature bipolar master-slave comparator and frequency divider in 4H-SiC technology
R Hedayati, L Lanni, M Shakir, A Salemi, CM Zetterling
Materials Science Forum 897, 681-684, 2017
62017
Investigation of the breakdown voltage in high voltage 4H-SiC BJT with respect to oxide and interface charges
A Salemi, H Elahipanah, CM Zetterling, M Östling
Materials Science Forum 821, 834-837, 2015
62015
A comprehensive study on the geometrical effects in high-power 4H–SiC BJTs
A Salemi, H Elahipanah, CM Zetterling, M Östling
IEEE Transactions on Electron Devices 64 (3), 882-887, 2016
52016
Geometrical effect dependency on the on-state characteristics in 5.6 kV 4H-SiC BJTs
A Salemi, H Elahipanah, CM Zetterling, M Östling
Materials Science Forum 858, 958-961, 2016
52016
4.5-kV 20-mΩ. cm2 implantation-free 4H-SiC BJT with trench structures on the junction termination extension
H Elahipanah, A Salemi, CM Zetterling, M Östling
Materials Science Forum 821, 838-841, 2015
52015
Low temperature Ni-Al ohmic contacts to p-type 4H-SiC using semi-salicide processing
M Ekström, S Hou, H Elahipanah, A Salemi, M Östling, CM Zetterling
Materials Science Forum 924, 389-392, 2018
42018
Characterization of SiGe/Si multi-quantum wells for infrared sensing
M Moeen, A Salemi, M Kolahdouz, M Östling, HH Radamson
Applied Physics Letters 103 (25), 251609, 2013
42013
Gated base structure for improved current gain in SiC bipolar technology
BG Malm, H Elahipanah, A Salemi, M Östling
2017 47th European Solid-State Device Research Conference (ESSDERC), 122-125, 2017
22017
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