David Cooper
David Cooper
CEA LETI Minatec Campus
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Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM
D Cooper, C Baeumer, N Bernier, A Marchewka, C La Torre, ...
Advanced materials 29 (23), 1700212, 2017
Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron …
A Béché, JL Rouvière, JP Barnes, D Cooper
Ultramicroscopy 131, 10-23, 2013
Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE
G Tourbot, C Bougerol, A Grenier, M Den Hertog, D Sam-Giao, D Cooper, ...
Nanotechnology 22 (7), 075601, 2011
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction
JL Rouviere, A Béché, Y Martin, T Denneulin, D Cooper
Applied Physics Letters 103 (24), 2013
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope
D Cooper, T Denneulin, N Bernier, A Béché, JL Rouvière
Micron 80, 145-165, 2016
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016
Vertically stacked-nanowires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain
S Barraud, V Lapras, MP Samson, L Gaben, L Grenouillet, ...
2016 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2016
Strain-induced performance enhancement of trigate and omega-gate nanowire FETs scaled down to 10-nm width
R Coquand, M Casse, S Barraud, D Cooper, V Maffini-Alvaro, ...
IEEE Transactions on Electron Devices 60 (2), 727-732, 2012
Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
J Aubin, JM Hartmann, A Gassenq, JL Rouviere, E Robin, V Delaye, ...
Semiconductor Science and Technology 32 (9), 094006, 2017
Strained tunnel FETs with record ION: first demonstration of ETSOI TFETs with SiGe channel and RSD
A Villalon, C Le Royer, M Cassé, D Cooper, B Prévitali, C Tabone, ...
2012 Symposium on VLSI technology (VLSIT), 49-50, 2012
Mapping active dopants in single silicon nanowires using off-axis electron holography
MI Den Hertog, H Schmid, D Cooper, JL Rouviere, MT Bjork, H Riel, ...
Nano letters 9 (11), 3837-3843, 2009
Medium resolution off-axis electron holography with millivolt sensitivity
D Cooper, R Truche, P Rivallin, JM Hartmann, F Laugier, F Bertin, ...
Applied Physics Letters 91 (14), 2007
Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution
D Cooper, JP Barnes, JM Hartmann, A Béché, JL Rouviere
Applied Physics Letters 95 (5), 2009
Dark field electron holography for strain measurement
A Béché, JL Rouvière, JP Barnes, D Cooper
Ultramicroscopy 111 (3), 227-238, 2011
Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si pn junctions by in situ annealing
D Cooper, AC Twitchett, PK Somodi, PA Midgley, RE Dunin-Borkowski, ...
Applied physics letters 88 (6), 2006
Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of …
D Cooper, C Ailliot, JP Barnes, JM Hartmann, P Salles, G Benassayag, ...
Ultramicroscopy 110 (5), 383-389, 2010
Williamson-hall analysis in estimation of crystallite size and lattice strain in Bi1. 34Fe0. 66Nb1. 34O6. 35 prepared by the sol-gel method
S Devesa, AP Rooney, MP Graça, D Cooper, LC Costa
Materials Science and Engineering: B 263, 114830, 2021
3D analysis of advanced nano-devices using electron and atom probe tomography
A Grenier, S Duguay, JP Barnes, R Serra, G Haberfehlner, D Cooper, ...
Ultramicroscopy 136, 185-192, 2014
Direct comparison of off-axis holography and differential phase contrast for the mapping of electric fields in semiconductors by transmission electron microscopy.
B Haas, JL Rouviere, V Boureau, R Berthier, D Cooper
Ultramicroscopy 198, 58-72, 2019
Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography
D Cooper, A Béché, JM Hartmann, V Carron, JL Rouvière
Applied Physics Letters 96 (11), 2010
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