| Nanoscale topographical control of capillary assembly of nanoparticles V Flauraud, M Mastrangeli, GD Bernasconi, J Butet, DTL Alexander, ... Nature nanotechnology 12 (1), 73-80, 2017 | 327 | 2017 |
| Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs) C Giovinazzo, J Sandrini, E Shahrabi, OT Celik, Y Leblebici, C Ricciardi ACS Applied Electronic Materials 1 (6), 900-909, 2019 | 29 | 2019 |
| Chip-level CMOS co-integration of ReRAM-based non-volatile memories E Shahrabi, J Sandrini, B Attarimashalkoubeh, T Demirci, M Hadad, ... 2016 12th Conference on Ph. D. Research in Microelectronics and Electronics …, 2016 | 17 | 2016 |
| Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs J Sandrini, B Attarimashalkoubeh, E Shahrabi, I Krawczuk, Y Leblebici 2016 IEEE International Conference on the Science of Electrical Engineering …, 2016 | 14 | 2016 |
| Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering E Shahrabi, C Giovinazzo, M Hadad, T LaGrange, M Ramos, C Ricciardi, ... Advanced Electronic Materials 5 (8), 1800835, 2019 | 12 | 2019 |
| Multi-ReRAM synapses for artificial neural network training I Boybat, C Giovinazzo, E Shahrabi, I Krawczuk, I Giannopoulos, ... 2019 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2019 | 11 | 2019 |
| The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance E Shahrabi, C Giovinazzo, J Sandrini, Y Leblebici 2018 14th Conference on Ph. D. Research in Microelectronics and Electronics …, 2018 | 11 | 2018 |
| Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization E Shahrabi, T LaGrange, T Demirci, Y Leblebici Microelectronic Engineering 214, 74-80, 2019 | 6 | 2019 |
| Effect of hf metal layer on the switching characteristic of hfox-based resistive random access memory B Attarimashalkoubeh, J Sandrini, E Shahrabi, M Barlas, Y Leblebici 2016 12th Conference on Ph. D. Research in Microelectronics and Electronics …, 2016 | 6 | 2016 |
| Investigation on the Stabilizing Effect of Titanium in HfO2-Based Resistive Switching Devices With Tungsten Electrode V Fra, E Shahrabi, Y Leblebici, C Ricciardi Frontiers in Nanotechnology 2, 592684, 2020 | 4 | 2020 |
| ReRAM from material study to CMOS Co-integration E Shahrabi EPFL, 2019 | 2 | 2019 |
| Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs B Attarimashalkoubeh, J Sandrini, E Shahrabi, Y Leblebici 2017 47th European Solid-State Device Research Conference (ESSDERC), 152-155, 2017 | 1 | 2017 |
| Nanoscale topography determines the capillary assembly of nanoparticles V Flauraud, M Mastrangeli, GD Bernasconi, J Butet, D Alexander, ... 13th Zsigmondy Colloquium of the German Colloidal Society, 2017 | | 2017 |
| Capillary particle assembly (CAPA) for plasmonic devices E Shahrabi | | 2014 |
| High-yield and high-precision nanoparticle assembly: towards complex plasmonic antennas V Flauraud, M Mastrangeli, E Shahrabi, J Brugger 40th International Conference on Micro and Nano Engineering (MNE 2014), 2014 | | 2014 |
| LSM OC Akgun, A Akin, A Akkaya, C Aprile, P Athanasopoulos, A Athmanathan, ... | | |
