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Sriram Balasubramanian
Sriram Balasubramanian
Samsung Foundry
Verifierad e-postadress på samsung.com
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FinFET-based SRAM design
Z Guo, S Balasubramanian, R Zlatanovici, TJ King, B Nikolić
Proceedings of the 2005 international symposium on Low power electronics and …, 2005
2232005
FinFET process refinements for improved mobility and gate work function engineering
YK Choi, L Chang, P Ranade, JS Lee, D Ha, S Balasubramanian, ...
Digest. International Electron Devices Meeting,, 259-262, 2002
1922002
SRAM read/write margin enhancements using FinFETs
A Carlson, Z Guo, S Balasubramanian, R Zlatanovici, TJK Liu, B Nikolic
IEEE transactions on very large scale integration (VLSI) systems 18 (6), 887-900, 2009
892009
Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs
JS Lee, YK Choi, D Ha, S Balasubramanian, TJ King, J Bokor
IEEE Electron Device Letters 24 (3), 186-188, 2003
882003
FinFET SRAM with enhanced read/write margins
A Carlson, Z Guo, S Balasubramanian, TK Liu, B Nikolic
2006 IEEE international SOI Conferencee Proceedings, 105-106, 2006
602006
MOSFET design for forward body biasing scheme
A Hokazono, S Balasubramanian, K Ishimaru, H Ishiuchi, TJK Liu, C Hu
IEEE Electron Device Letters 27 (5), 387-389, 2006
552006
Forward body biasing as a bulk-Si CMOS technology scaling strategy
A Hokazono, S Balasubramanian, K Ishimaru, H Ishiuchi, C Hu, TJK Liu
IEEE Transactions on Electron Devices 55 (10), 2657-2664, 2008
452008
MOSFET hot-carrier reliability improvement by forward-body bias
A Hokazono, S Balasubramanian, K Ishimaru, H Ishiuchi, C Hu, TJK Liu
IEEE Electron Device Letters 27 (7), 605-608, 2006
372006
FinFET SRAM design challenges
D Burnett, S Parihar, H Ramamurthy, S Balasubramanian
2014 IEEE International Conference on IC Design & Technology, 1-4, 2014
292014
MOS structures that exhibit lower contact resistance and methods for fabricating the same
S Balasubramanian
US Patent 7,981,749, 2011
282011
Finfet-based sram with feedback
Z Guo, S Balasubramanian, R Zlatanovici, TJ King, B Nikolic
US Patent App. 11/622,305, 2007
282007
Circuit-performance implications for double-gate MOSFET scaling below 25 nm
S Balasubramanian, L Chang, B Nikolic, TJ King
Proc. Silicon Nanoelectronics Workshop, 16-17, 2003
282003
Selective enhancement of SiO2 etch rate by Ar-ion implantation for improved etch depth control
X Sun, Q Lu, H Takeuchi, S Balasubramanian, TJK Liu
Electrochemical and Solid-State Letters 10 (9), D89, 2007
222007
Low-variation SRAM bitcells in 22nm FDSOI technology
V Joshi, H Ramamurthy, S Balasubramanian, S Seo, H Yoon, X Zou, ...
2017 Symposium on VLSI Technology, T222-T223, 2017
152017
Threshold voltage and DIBL variability modeling based on forward and reverse measurements for SRAM and analog MOSFETs
N Damrongplasit, L Zamudio, TJK Liu, S Balasubramanian
IEEE Transactions on Electron Devices 62 (4), 1119-1126, 2015
132015
Compact modeling of FinFETs featuring independent-gate operation mode
CH Lin, M Dunga, S Balasubramanian, AM Niknejad, C Hu, X Xi, J He, ...
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005.(VLSI-TSA …, 2005
122005
Nanoscale thin-body MOSFET design and applications
S Balasubramanian
University of California, Berkeley, 2006
102006
Near-threshold circuit variability in 14nm FinFETs for ultra-low power applications
S Balasubramanian, N Pimparkar, M Kushare, V Mahajan, J Bansal, ...
2016 17th International Symposium on Quality Electronic Design (ISQED), 258-262, 2016
92016
Fin sidewall microroughness measurement by AFM
CFH Gondran, E Morales, A Guerry, W Xiong, CR Cleavelin, R Wise, ...
MRS Online Proceedings Library (OPL) 811, E1. 13, 2004
92004
Threshold voltage and DIBL variability modeling for SRAM and analog MOSFETs
N Damrongplasit, L Zamudio, S Balasubramanian
2012 Symposium on VLSI Technology (VLSIT), 187-188, 2012
72012
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Artiklar 1–20