johannes svensson
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Determination of the bending rigidity of graphene via electrostatic actuation of buckled membranes
N Lindahl, D Midtvedt, J Svensson, OA Nerushev, N Lindvall, A Isacsson, ...
Nano letters 12 (7), 3526-3531, 2012
Schottky barriers in carbon nanotube-metal contacts
J Svensson, EEB Campbell
Journal of applied physics 110 (11), 16, 2011
Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors
J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson
Nano letters 13 (4), 1380-1385, 2013
Covalent amino-functionalisation of single-wall carbon nanotubes
A Gromov, S Dittmer, J Svensson, OA Nerushev, SA Perez-García, ...
Journal of Materials Chemistry 15 (32), 3334-3339, 2005
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion= 10 μA/μm for Ioff= 1 nA/μm at Vds= 0.3 V
E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson
2016 IEEE International Electron Devices Meeting (IEDM), 19.1. 1-19.1. 4, 2016
Single InAs/GaSb nanowire low-power CMOS inverter
AW Dey, J Svensson, BM Borg, M Ek, LE Wernersson
Nano letters 12 (11), 5593-5597, 2012
Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade
E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ...
Nano letters 17 (7), 4373-4380, 2017
III–V nanowire complementary metal–oxide semiconductor transistors monolithically integrated on Si
J Svensson, AW Dey, D Jacobsson, LE Wernersson
Nano letters 15 (12), 7898-7904, 2015
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
AW Dey, J Svensson, M Ek, E Lind, C Thelander, LE Wernersson
Nano letters 13 (12), 5919-5924, 2013
Carbon nanotube bolometers
M Tarasov, J Svensson, L Kuzmin, EEB Campbell
Applied Physics Letters 90 (16), 163503, 2007
Low leakage-current InAsSb nanowire photodetectors on silicon
MD Thompson, A Alhodaib, AP Craig, A Robson, A Aziz, A Krier, ...
Nano letters 16 (1), 182-187, 2016
Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates
KM Persson, M Berg, MB Borg, J Wu, S Johansson, J Svensson, ...
IEEE transactions on electron devices 60 (9), 2761-2767, 2013
The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts
J Svensson, AA Sourab, Y Tarakanov, DS Lee, SJ Park, SJ Baek, ...
Nanotechnology 20 (17), 175204, 2009
Scaling of vertical InAs–GaSb nanowire tunneling field-effect transistors on Si
E Memišević, J Svensson, M Hellenbrand, E Lind, LE Wernersson
IEEE Electron Device Letters 37 (5), 549-552, 2016
InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors
E Memisevic, J Svensson, E Lind, LE Wernersson
IEEE Transactions on Electron Devices 64 (11), 4746-4751, 2017
Electric field aligned growth of single-walled carbon nanotubes
S Dittmer, J Svensson, EEB Campbell
Current Applied Physics 4 (6), 595-598, 2004
Vertical InAs/InGaAs heterostructure metal–oxide–semiconductor field-effect transistors on Si
OP Kilpi, J Svensson, J Wu, AR Persson, R Wallenberg, E Lind, ...
Nano letters 17 (10), 6006-6010, 2017
Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: A CNT-gated CNT-FET
DS Lee, J Svensson, SW Lee, YW Park, EEB Campbell
Journal of nanoscience and nanotechnology 6 (5), 1325-1330, 2006
Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMINof 35 mV/Decade
E Memisevic, J Svensson, E Lind, LE Wernersson
IEEE Electron Device Letters 39 (7), 1089-1091, 2018
Carbon nanotube field effect transistors with suspended graphene gates
J Svensson, N Lindahl, H Yun, M Seo, D Midtvedt, Y Tarakanov, ...
Nano letters 11 (9), 3569-3575, 2011
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