Manuel Aldegunde
Title
Cited by
Cited by
Year
Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors
A Martinez, M Aldegunde, N Seoane, AR Brown, JR Barker, A Asenov
IEEE Transactions on Electron Devices 58 (8), 2209-2217, 2011
792011
Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations
M Aldegunde, A Martinez, JR Barker
IEEE Electron Device Letters 33 (2), 194-196, 2012
702012
Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors
AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011
602011
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
N Seoane, G Indalecio, E Comesaña, M Aldegunde, AJ García-Loureiro, ...
IEEE Transactions on Electron Devices 61 (2), 466-472, 2014
462014
Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs
J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ...
IEEE Transactions on Electron Devices 61 (2), 423-429, 2014
412014
Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect …
M Aldegunde, A Martinez, A Asenov
Journal of Applied Physics 110 (9), 094518, 2011
402011
3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
M Aldegunde, AJ Garcia-Loureiro, K Kalna
IEEE Transactions on Electron Devices 60 (5), 1561-1567, 2013
382013
NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants
A Martinez, M Aldegunde, AR Brown, S Roy, A Asenov
Solid-state electronics 71, 101-105, 2012
322012
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ...
IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016
302016
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ...
Solid-State Electronics 128, 17-24, 2017
292017
Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory
M Aldegunde, JR Kermode, N Zabaras
Journal of Computational Physics 311, 173-195, 2016
292016
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes
M Aldegunde, N Seoane, AJ García-Loureiro, K Kalna
Computer Physics Communications 181 (1), 24-34, 2010
232010
3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections
D Nagy, MA Elmessary, M Aldegunde, R Valin, A Martinez, J Lindberg, ...
IEEE Transactions on Nanotechnology 14 (1), 93-100, 2015
202015
Statistical study of the influence of LER and MGG in SOI MOSFET
G Indalecio, M Aldegunde, N Seoane, K Kalna, AJ Garcia-Loureiro
Semiconductor Science and Technology 29 (4), 045005, 2014
192014
Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In 0.53 Ga 0.47 As GAA MOSFET
N Seoane, G Indalecio, E Comesaña, AJ Garcia-Loureiro, M Aldegunde, ...
IEEE Electron Device Letters 34 (2), 205-207, 2013
192013
Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor
M Aldegunde, A Martinez, JR Barker
Journal of applied physics 113 (1), 014501, 2013
182013
Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
MA Elmessary, D Nagy, M Aldegunde, J Lindberg, WG Dettmer, D Peric, ...
IEEE Transactions on Electron Devices 63 (3), 933-939, 2016
172016
3D simulation study of work-function variability in a 25 nm metal-gate FinFET with curved geometry using Voronoi grains
G Indalecio, AJ Garcia-Loureiro, M Aldegunde, K Kalna
Proc. 17th Int. Conf. Simul. Semicond. Proc. Devices (SISPAD), 149-152, 2012
172012
Quantum transport of a nanowire field-effect transistor with complex phonon self–energy
R Valin, M Aldegunde, A Martinez, JR Barker
Journal of Applied Physics 116 (8), 084507, 2014
152014
Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions
M Aldegunde, N Zabaras, J Kristensen
Journal of Computational Physics 323, 17-44, 2016
112016
The system can't perform the operation now. Try again later.
Articles 1–20