Hangbing Lv
Hangbing Lv
Verifierad e-postadress på ime.ac.cn - Startsida
Citeras av
Citeras av
Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM
Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu
Advanced Materials 24 (14), 1844-1849, 2012
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode
Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu
ACS nano 4 (10), 6162-6168, 2010
Reproducible unipolar resistance switching in stoichiometric films
X Wu, P Zhou, J Li, LY Chen, HB Lv, YY Lin, TA Tang
Applied Physics Letters 90 (18), 183507, 2007
Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology
H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu
Advanced Functional Materials 24 (36), 5679-5686, 2014
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Eliminating negative‐SET behavior by suppressing nanofilament overgrowth in cation‐based memory
S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu
Advanced Materials 28 (48), 10623-10629, 2016
Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
X Zhao, J Ma, X Xiao, Q Liu, L Shao, D Chen, S Liu, J Niu, X Zhang, ...
Advanced materials 30 (14), 1705193, 2018
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
H Lv, X Xu, H Liu, R Liu, Q Liu, W Banerjee, H Sun, S Long, L Li, M Liu
Scientific reports 5 (1), 1-6, 2015
Confining cation injection to enhance CBRAM performance by nanopore graphene layer
X Zhao, S Liu, J Niu, L Liao, Q Liu, X Xiao, H Lv, S Long, W Banerjee, W Li, ...
Small 13 (35), 1603948, 2017
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials
Y Li, S Long, Q Liu, H Lv, M Liu
Small 13 (35), 1604306, 2017
Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode
H Lv, M Wang, H Wan, Y Song, W Luo, P Zhou, T Tang, Y Lin, R Huang, ...
Applied Physics Letters 94 (21), 213502, 2009
Thermal crosstalk in 3-dimensional RRAM crossbar array
P Sun, N Lu, L Li, Y Li, H Wang, H Lv, Q Liu, S Long, S Liu, M Liu
Scientific reports 5 (1), 1-9, 2015
In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory
J Sun, Q Liu, H Xie, X Wu, F Xu, T Xu, S Long, H Lv, Y Li, L Sun, M Liu
Applied Physics Letters 102 (5), 053502, 2013
Enhancement of endurance for CuxO based RRAM cell
M Yin, P Zhou, HB Lv, TA Tang, BA Chen, YY Lin, A Bao, MH Chi
2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008
An artificial neuron based on a threshold switching memristor
X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ...
IEEE Electron Device Letters 39 (2), 308-311, 2017
Role of TaON interface for CuxO resistive switching memory based on a combined model
P Zhou, M Yin, HJ Wan, HB Lu, TA Tang, YY Lin
APPLIED PHYSICS LETTERS 94 (5), 053510, 2009
Resistive Memory Switching of Films for a Nonvolatile Memory Application
HB Lv, M Yin, XF Fu, YL Song, L Tang, P Zhou, CH Zhao, TA Tang, ...
IEEE electron device letters 29 (4), 309-311, 2008
An overview of resistive random access memory devices
YT Li, SB Long, Q Liu, HB Lü, S Liu, M Liu
Chinese Science Bulletin 56 (28-29), 3072, 2011
Investigation of resistive switching behaviours in WO3-based RRAM devices
YT Li, SB Long, HB Lu, Q Liu, Q Wang, Y Wang, S Zhang, WT Lian, S Liu, ...
CHINESE PHYSICS B 20 (1), 017305, 2011
Thermoelectric Seebeck effect in oxide-based resistive switching memory
M Wang, C Bi, L Li, S Long, Q Liu, H Lv, N Lu, P Sun, M Liu
Nature communications 5, 4598, 2014
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