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kacem smaali
kacem smaali
Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN, UMR CNRS 8520)
Verifierad e-postadress på cdta.dz
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High on− off conductance switching ratio in optically-driven self-assembled conjugated molecular systems
K Smaali, S Lenfant, S Karpe, M Oçafrain, P Blanchard, D Deresmes, ...
Acs Nano 4 (4), 2411-2421, 2010
1532010
Interface dipole: Effects on threshold voltage and mobility for both amorphous and poly-crystalline organic field effect transistors
DV C Celle, C Suspène, M Ternisien, S Lenfant, D Guérin, K Smaali, K ...
Organic Electronics 15 (3), 729-737, 2014
562014
Conductance statistics from a large array of sub-10 nm molecular junctions
K Smaali, N Clément, G Patriarche, D Vuillaume
ACS nano 6 (6), 4639-4647, 2012
552012
Estimation of π–π electronic couplings from current measurements
J Trasobares, J Rech, T Jonckheere, T Martin, O Alévêque, E Levillain, ...
Nano letters 17 (5), 3215-3224, 2017
482017
Large Array of Sub‐10‐nm Single‐Grain Au Nanodots for use in Nanotechnology
N Clément, G Patriarche, K Smaali, F Vaurette, K Nishiguchi, D Troadec, ...
Small 7 (18), 2607-2613, 2011
442011
Oligothiophene-derivatized azobenzene as immobilized photoswitchable conjugated systems
S Karpe, M Oçafrain, K Smaali, S Lenfant, D Vuillaume, P Blanchard, ...
Chemical communications 46 (21), 3657-3659, 2010
422010
On the mechanical and electronic properties of thiolated gold nanocrystals
K Smaali, S Desbief, G Foti, T Frederiksen, D Sanchez-Portal, A Arnau, ...
Nanoscale 7 (5), 1809-1819, 2015
312015
A Crown‐Ether Loop‐Derivatized Oligothiophene Doubly Attached on Gold Surface as Cation‐Binding Switchable Molecular Junction
TK Tran, K Smaali, M Hardouin, Q Bricaud, M Oçafrain, P Blanchard, ...
Advanced Materials 25 (3), 427-431, 2013
242013
Scanning near-field electron beam induced current microscopy: Application to III-V heterostructures and quantum dots
M Troyon, K Smaali
Applied physics letters 90 (21), 2007
232007
Imaging the electric properties of InAs∕ InP (001) quantum dots capped with a thin InP layer by conductive atomic force microscopy: Evidence of memory effect
K Smaali, M Troyon, A El Hdiy, M Molinari, G Saint-Girons, G Patriarche
Applied physics letters 89 (11), 2006
222006
Influence of Molecular Organization on the Electrical Characteristics of π-conjugated Self-assembled Monolayers
X Lefèvre, F Moggia, O Segut, YP Lin, Y Ksari, G Delafosse, K Smaali, ...
The Journal of Physical Chemistry C 119 (10), 5703-5713, 2015
202015
Initial stage of the overgrowth of InP on InAs∕ InP (001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges
G Saint-Girons, G Patriarche, A Michon, G Beaudoin, I Sagnes, K Smaali, ...
Applied physics letters 89 (3), 2006
172006
High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+–n silicon junction
K Smaali, J Fauré, A El Hdiy, M Troyon
Ultramicroscopy 108 (6), 605-612, 2008
162008
Band-gap determination of the native oxide capping quantum dots by use of different kinds of conductive AFM probes: example of InAs/GaAs quantum dots
K Smaali, A El Hdiy, M Molinari, M Troyon
IEEE transactions on electron devices 57 (6), 1455-1459, 2010
152010
Physical study by surface characterizations of sarin sensor on the basis of chemically functionalized silicon nanoribbon field effect transistor
K Smaali, D Guérin, V Passi, L Ordronneau, A Carella, T Melin, E Dubois, ...
The Journal of Physical Chemistry C 120 (20), 11180-11191, 2016
122016
Influence of electron irradiation on the electronic transport mechanisms during the conductive AFM imaging of InAs/GaAs quantum dots capped with a thin GaAs layer
M Troyon, K Smaali
Nanotechnology 19 (25), 255709, 2008
112008
Local electronic transport through InAs/InP (0 0 1) quantum dots capped with a thin InP layer studied by an AFM conductive probe
M Troyon, K Smaali, M Molinari, A El Hdiy, G Saint-Girons, G Patriarche
Semiconductor science and technology 22 (7), 755, 2007
42007
Application of nano-EBIC to the characterization of GaAs and InP homojunctions
K Smaali, M Troyon
Nanotechnology 19 (15), 155706, 2008
32008
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Artiklar 1–18