Vihar P. Georgiev
Title
Cited by
Cited by
Year
Design and fabrication of memory devices based on nanoscale polyoxometalate clusters
C Busche, L Vilā-Nadal, J Yan, HN Miras, DL Long, VP Georgiev, ...
Nature 515 (7528), 545-549, 2014
2342014
Influence of low-symmetry distortions on electron transport through metal atom chains: when is a molecular wire really “broken”?
VP Georgiev, JE McGrady
Journal of the American Chemical Society 133 (32), 12590-12599, 2011
572011
Low-symmetry distortions in Extended Metal Atom Chains (EMACs): Origins and consequences for electron transport
VP Georgiev, PJ Mohan, D DeBrincat, JE McGrady
Coordination Chemistry Reviews 257 (1), 290-298, 2013
552013
Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics
L Vilā‐Nadal, SG Mitchell, S Markov, C Busche, V Georgiev, A Asenov, ...
Chemistry-A European Journal 19, 16502, 2013
452013
Efficient spin filtering through cobalt-based extended metal atom chains
VP Georgiev, JE McGrady
Inorganic chemistry 49 (12), 5591-5597, 2010
362010
Periodic trends in electron transport through extended metal atom chains: comparison of Ru 3 (dpa) 4 (NCS) 2 with its first-row analogues
PJ Mohan, VP Georgiev, JE McGrady
Chemical Science 3 (4), 1319-1329, 2012
292012
Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study
VP Georgiev, EA Towie, A Asenov
IEEE Transaction on Electron Devices 60 (3), 965, 2013
272013
Nanowire transistor solutions for 5nm and beyond
A Asenov, Y Wang, B Cheng, X Wang, P Asenov, T Al-Ameri, VP Georgiev
2016 17th International Symposium on Quality Electronic Design (ISQED), 269-274, 2016
242016
A survey of carbon nanotube interconnects for energy efficient integrated circuits
A Todri-Sanial, R Ramos, H Okuno, J Dijon, A Dhavamani, M Widlicenus, ...
IEEE Circuits and Systems Magazine 17 (2), 47-62, 2017
222017
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ...
Transaction of Electron Devices 62 (10), 3229 - 3236, 2015
202015
Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors
T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ...
Materials 12 (1), 124, 2019
152019
Ness: new flexible nano-electronic simulation software
S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ...
2018 International Conference on Simulation of Semiconductor Processes and …, 2018
142018
Simulation study of vertically stacked lateral Si nanowires transistors for 5-nm CMOS applications
T Al-Ameri, VP Georgiev, F Adamu-Lema, A Asenov
IEEE Journal of the Electron Devices Society 5 (6), 466-472, 2017
142017
Experimental and simulation study of silicon nanowire transistors using heavily doped channels
VP Georgiev, MM Mirza, AI Dochioiu, F Adamu-Lema, SM Amoroso, ...
IEEE Transactions on Nanotechnology 16 (5), 727-735, 2017
132017
Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D Poisson Schrodinger simulation study
T Al-Ameri, VP Georgiev, FA Lema, T Sadi, X Wang, E Towie, C Riddet, ...
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
132016
Attenuation of conductance in cobalt extended metal atom chains
VP Georgiev, WMC Sameera, JE McGrady
The Journal of Physical Chemistry C 116 (38), 20163-20172, 2012
132012
Optimization and Evaluation of Variability in the Programming Window of a Flash Cell With Molecular Metal-Oxide Storage
VP Georgiev, S Markov, L Vila-Nadal, C Busche, L Cronin, A Asenov
IEEE Transaction of Electron Devices 61 (6), 2019-2026, 2014
122014
3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and Nanowire Transistors
C Sampedro, L Donetti, F Gámiz, A Godoy, FJ Garcia-Ruiz, VP Georgiev, ...
112014
Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors
H Carrillo-Nuņez, N Dimitrova, A Asenov, V Georgiev
IEEE Electron Device Letters 40 (9), 1366-1369, 2019
102019
Thorough understanding of retention time of Z2FET memory operation
M Duan, C Navarro, B Cheng, F Adamu-Lema, X Wang, VP Georgiev, ...
IEEE Transactions on Electron Devices 66 (1), 383-388, 2018
102018
The system can't perform the operation now. Try again later.
Articles 1–20