| Stack of two III-nitride laser diodes interconnected by a tunnel junction M Siekacz, G Muziol, M Hajdel, M Żak, K Nowakowski-Szkudlarek, ... Optics Express 27 (4), 5784-5791, 2019 | 38 | 2019 |
| Vertical integration of nitride laser diodes and light emitting diodes by tunnel junctions M Siekacz, G Muziol, H Turski, M Hajdel, M Żak, M Chlipała, M Sawicka, ... Electronics 9 (9), 1481, 2020 | 20 | 2020 |
| Optical properties of III-nitride laser diodes with wide InGaN quantum wells G Muziol, M Hajdel, M Siekacz, K Szkudlarek, S Stanczyk, H Turski, ... Applied Physics Express 12 (7), 072003, 2019 | 19 | 2019 |
| Dependence of InGaN quantum well thickness on the nature of optical transitions in LEDs M Hajdel, M Chlipała, M Siekacz, H Turski, P Wolny, ... Materials 15 (1), 237, 2021 | 17 | 2021 |
| III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources G Muziol, M Hajdel, M Siekacz, H Turski, K Pieniak, A Bercha, ... Japanese Journal of Applied Physics 61 (SA), SA0801, 2021 | 15 | 2021 |
| Nitride LEDs and lasers with buried tunnel junctions H Turski, M Siekacz, G Muzioł, M Hajdel, S Stańczyk, M Żak, M Chlipała, ... ECS Journal of Solid State Science and Technology 9 (1), 015018, 2019 | 14 | 2019 |
| Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy G Muziol, M Hajdel, H Turski, K Nomoto, M Siekacz, ... Optics Express 28 (23), 35321-35329, 2020 | 13 | 2020 |
| Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes J Slawinska, G Muziol, M Siekacz, H Turski, M Hajdel, M Zak, ... Optics Express 30 (15), 27004-27014, 2022 | 11 | 2022 |
| Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy G Muziol, M Siekacz, K Nowakowski-Szkudlarek, M Hajdel, ... Materials Science in Semiconductor Processing 91, 387-391, 2019 | 11 | 2019 |
| Electrically pumped blue laser diodes with nanoporous bottom cladding M Sawicka, G Muziol, N Fiuczek, M Hajdel, M Siekacz, ... Optics Express 30 (7), 10709-10722, 2022 | 7 | 2022 |
| Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes M Hajdel, G Muzioł, K Nowakowski-Szkudlarek, M Siekacz, P Wolny, ... Optica Applicata 50 (2), 311-321, 2020 | 5 | 2020 |
| Transition between quantum confinement and bulklike behavior in polar quantum wells L Uhlig, J Tepaß, M Hajdel, G Muziol, UT Schwarz Physical Review B 108 (4), 045304, 2023 | 3 | 2023 |
| Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design H Turski, S Bharadwaj, M Siekacz, G Muziol, M Chlipala, M Zak, M Hajdel, ... Gallium Nitride Materials and Devices XV 11280, 111-116, 2020 | 3 | 2020 |
| Bright emission at reverse bias after trailing edge of driving pulse in wide InGaN quantum wells J Tepaß, L Uhlig, M Hajdel, G Muziol, UT Schwarz physica status solidi (a) 220 (16), 2300042, 2023 | 2 | 2023 |
| Influence of electron blocking layer on properties of InGaN-based laser diodes grown by plasma-assisted molecular beam epitaxy M Hajdel, G Muziol, K Nowakowski-Szkudlarek, M Siekacz, ... Acta Physica Polonica A 136 (4), 593-597, 2019 | 2 | 2019 |
| Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy N Fiuczek, M Hajdel, A Kafar, G Muziol, M Siekacz, A Feduniewicz-Żmuda, ... Optical Materials Express 13 (5), 1201-1210, 2023 | 1 | 2023 |
| Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content Quantum Wells P Wolny, H Turski, G Muziol, M Sawicka, J Smalc-Koziorowska, J Moneta, ... Physical review applied 19 (1), 014044, 2023 | 1 | 2023 |
| Tunnel junctions for vertically integrated multiple nitrides laser diodes M Siekacz, G Muziol, H Turski, K Nowakowski-Szkudlarek, M Hajdel, ... 2019 Device Research Conference (DRC), 75-76, 2019 | 1 | 2019 |
| Investigating the lateral carrier diffusion in MBE grown InGaN quantum wells as function of quantum well width C Becht, UT Schwarz, M Hajdel, G Muziol Gallium Nitride Materials and Devices XIX, PC1288617, 2024 | | 2024 |
| Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy G Muziol, M Hajdel, M Siekacz, M Zak, K Golyga, A Feduniewicz-Zmuda, ... Gallium Nitride Materials and Devices XIX, PC1288619, 2024 | | 2024 |
