| SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode X Li, X Tong, AQ Huang, H Tao, K Zhou, Y Jiang, J Jiang, X Deng, X She, ... IEEE Transactions on Electron Devices 65 (1), 347-351, 2017 | 56 | 2017 |
| Flexible epoxy-resin substrate based 1.2 kV SiC half bridge module with ultra-low parasitics and high functionality X Zhao, B Gao, Y Jiang, L Zhang, S Wang, Y Xu, K Nishiguchi, Y Fukawa, ... 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 4011-4018, 2017 | 35 | 2017 |
| 10kV SiC MPS diodes for high temperature applications Y Jiang, W Sung, X Song, H Ke, S Liu, BJ Baliga, AQ Huang, E Van Brunt 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 29 | 2016 |
| Understanding high temperature static and dynamic characteristics of 1.2 kV SiC power MOSFETs SY Liu, YF Jiang, WJ Sung, XQ Song, BJ Baliga, WF Sun, AQ Huang Materials Science Forum 897, 501-504, 2017 | 16 | 2017 |
| Novel polymer substrate-based 1.2 kV/40A double-sided intelligent power module X Zhao, Y Jiang, B Gao, K Nishiguchi, Y Fukawa, DC Hopkins 2017 IEEE 67th Electronic Components and Technology Conference (ECTC), 1461-1467, 2017 | 14 | 2017 |
| High-performance 700 V SiC MOSFETs for the industrial market A Gendron-Hansen, C Hong, Y Jiang, J May, D Meyer, D Sdrulla, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 7 | 2019 |
| Influence of lateral straggling of implated aluminum ions on high voltage 4H-SiC device edge termination design YF Jiang, BJ Baliga, AQ Huang Materials Science Forum 924, 361-364, 2018 | 7 | 2018 |
| A high performance power module with> 10kV capability to characterize and test in situ SiC devices at> 200 C ambient X Zhao, H Ke, Y Jiang, A Morgan, Y Xu, DC Hopkins Additional Papers and Presentations 2016 (HiTEC), 000149-000158, 2016 | 6 | 2016 |
| Electrical characteristics of 10-kV 4H-SiC MPS rectifiers with high Schottky barrier height Y Jiang, W Sung, J Baliga, S Wang, B Lee, A Huang Journal of Electronic Materials 47, 927-931, 2018 | 5 | 2018 |
| Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures SY Liu, BJ Baliga, YF Jiang, WF Sun, S Bhattacharya, AQ Huang Materials Science Forum 924, 719-722, 2018 | 4 | 2018 |
| Ultra Low Leakage Module for 12kV-225 C SiC Semiconductor Testing X Zhao, H Ke, Y Jiang, A Morgan, Y Xu, DC Hopkins International Symposium on Microelectronics, Oct, 11-13, 2016 | 3 | 2016 |
| Investigation of Package Effects on the Edge Termination E-Field for HV WBG Power Semiconductors H Ke, Y Jiang, AJ Morgan, DC Hopkins International Symposium on Microelectronics 2017 (1), 000224-000230, 2017 | 1 | 2017 |
| Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs A Gendron-Hansen, C Hong, YF Jiang, J May, D Sdrulla, B Odekirk, ... Materials Science Forum 1004, 822-829, 2020 | | 2020 |
| Design, Fabrication and Characterization of High Voltage (> 10 kV) 4H-SiC MPS Diodes Y Jiang North Carolina State University, 2019 | | 2019 |
| Technical approach S Liu, BJ Baliga, AQ Huang, Y Jiang, W Sung | | |
