| Concentration dependent and independent Si diffusion in ion-implanted GaAs T Ahlgren, J Likonen, J Slotte, J Räisänen, M Rajatora, J Keinonen Physical Review B 56 (8), 4597, 1997 | 78 | 1997 |
| Native point defects in GaSb J Kujala, N Segercrantz, F Tuomisto, J Slotte Journal of Applied Physics 116 (14), 2014 | 51 | 2014 |
| Vacancy-phosphorus complexes in strained Structure and stability SL Sihto, J Slotte, J Lento, K Saarinen, EV Monakhov, AY Kuznetsov, ... Physical Review B 68 (11), 115307, 2003 | 50 | 2003 |
| Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC J Slotte, K Saarinen, MS Janson, A Hallén, AY Kuznetsov, BG Svensson, ... Journal of Applied Physics 97 (3), 2005 | 36 | 2005 |
| Direct observations of the vacancy and its annealing in germanium J Slotte, S Kilpeläinen, F Tuomisto, J Räisänen, AN Larsen Physical Review B 83 (23), 235212, 2011 | 35 | 2011 |
| Evolution of vacancy-related defects upon annealing of ion-implanted germanium J Slotte, M Rummukainen, F Tuomisto, VP Markevich, AR Peaker, ... Physical Review B 78 (8), 085202, 2008 | 32 | 2008 |
| Vacancy generation in liquid phase epitaxy of Si A La Magna, V Privitera, G Fortunato, M Cuscunà, BG Svensson, ... Physical Review B 75 (23), 235201, 2007 | 30 | 2007 |
| Divacancy clustering in neutron-irradiated and annealed -type germanium K Kuitunen, F Tuomisto, J Slotte, I Capan Physical Review B 78 (3), 033202, 2008 | 29 | 2008 |
| On the manifestation of phosphorus-vacancy complexes in epitaxial Si: P films SK Dhayalan, J Kujala, J Slotte, G Pourtois, E Simoen, E Rosseel, ... Applied Physics Letters 108 (8), 2016 | 26 | 2016 |
| Influence of silicon doping on vacancies and optical properties of AlxGa1− xN thin films J Slotte, F Tuomisto, K Saarinen, CG Moe, S Keller, SP DenBaars Applied physics letters 90 (15), 2007 | 26 | 2007 |
| Formation of vacancy-impurity complexes in heavily Zn-doped InP J Slotte, K Saarinen, A Salmi, S Simula, R Aavikko, P Hautojärvi Physical Review B 67 (11), 115209, 2003 | 26 | 2003 |
| Evidence of a second acceptor state of the center in K Kuitunen, F Tuomisto, J Slotte Physical Review B 76 (23), 233202, 2007 | 23 | 2007 |
| Tensile strain in arsenic heavily doped Si G Borot, L Rubaldo, L Clement, R Pantel, D Dutartre, K Kuitunen, J Slotte, ... Journal of Applied Physics 102 (10), 2007 | 22 | 2007 |
| Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium T Kalliovaara, J Slotte, I Makkonen, J Kujala, F Tuomisto, R Milazzo, ... Applied Physics Letters 109 (18), 2016 | 20 | 2016 |
| Implantation defects and n-type doping in Ge and Ge rich SiGe AR Peaker, VP Markevich, B Hamilton, ID Hawkins, J Slotte, K Kuitunen, ... Thin Solid Films 517 (1), 152-154, 2008 | 20 | 2008 |
| Vacancy-impurity pairs in relaxed layers studied by positron annihilation spectroscopy M Rummukainen, J Slotte, K Saarinen, HH Radamson, J Hållstedt, ... Physical Review B 73 (16), 165209, 2006 | 19 | 2006 |
| Instability of the Sb vacancy in GaSb N Segercrantz, J Slotte, F Tuomisto, K Mizohata, J Räisänen Physical Review B 95 (18), 184103, 2017 | 18 | 2017 |
| Point defect balance in epitaxial GaSb N Segercrantz, J Slotte, I Makkonen, J Kujala, F Tuomisto, Y Song, ... Applied Physics Letters 105 (8), 2014 | 18 | 2014 |
| Stabilization of Ge-rich defect complexes originating from centers in S Kilpeläinen, K Kuitunen, F Tuomisto, J Slotte, HH Radamson, ... Physical Review B 81 (13), 132103, 2010 | 17 | 2010 |
| Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb J Kujala, T Südkamp, J Slotte, I Makkonen, F Tuomisto, H Bracht Journal of Physics: Condensed Matter 28 (33), 335801, 2016 | 16 | 2016 |
