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arkaprava bhattacharyya
arkaprava bhattacharyya
Verified email at eee.sastra.edu
Title
Cited by
Cited by
Year
Cohesive band structure of carbon nanotubes for applications in quantum transport
VK Arora, A Bhattacharyya
Nanoscale 5 (22), 10927-10935, 2013
392013
Adsorption of ammonia molecules and humidity on germanane nanosheet—a density functional study
V Nagarajan, A Bhattacharyya, R Chandiramouli
Journal of Molecular Graphics and Modelling 79, 149-156, 2018
322018
Performance analysis of asymmetric dielectric modulated dual short gate tunnel field effect transistor
A Pon, AS Carmel, A Bhattacharyya, R Ramesh
Superlattices and Microstructures 113, 608-615, 2018
132018
Extraction of nanoelectronic parameters from quantum conductance in a carbon nanotube
HC Chin, A Bhattacharyya, VK Arora
Carbon 76, 451-454, 2014
132014
Recent developments in black phosphorous transistors: a review
A Pon, A Bhattacharyya, R Rathinam
Journal of Electronic Materials, 1-17, 2021
122021
Unified bandgap engineering of graphene nanoribbons
VK Arora, A Bhattacharyya
Physica status solidi (b) 251 (11), 2257-2264, 2014
122014
Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application
R Rathinam, A Pon, S Carmel, A Bhattacharyya
IET Circuits, Devices & Systems 14 (8), 1167-1172, 2020
102020
Twisted monolayer black phosphorus nanoribbbons: Tunable electronic and optical properties
S Carmel, S Subramanian, R Rathinam, A Bhattacharyya
Journal of Applied Physics 127 (9), 2020
72020
Simulation of 2D layered material ballistic FETs using a hybrid methodology
A Pon, S Carmel, A Bhattacharyya, R Rathinam
2019 IEEE International Conference on Electron Devices and Solid-State …, 2019
72019
Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs)
S Carmel, A Pon, N Meenakshisundaram, R Ramesh, A Bhattacharyya
Physical Chemistry Chemical Physics 20 (21), 14855-14863, 2018
62018
Optimization of the geometry of a charge plasma double-gate junctionless transistor for improved RF stability
A Pon, A Bhattacharyya, B Padmanaban, R Ramesh
Journal of Computational Electronics 18, 906-917, 2019
52019
Charge plasma-based phosphorene tunnel FET using a hybrid computational method
A Pon, A Bhattacharyya, R Ramesh
Journal of Electronic Materials 50, 3624-3633, 2021
42021
Insights on Si doping on PNRs for NDR with high PVR and diode behaviour with a high rectification ratio
S Carmel, A Pon, R Ramesh, A Bhattacharyya
Physica E: Low-dimensional Systems and Nanostructures 114, 113630, 2019
42019
Optimization of gate all-around junctionless transistor using response surface methodology
R Ramesh, A Pon, PD Babu, S Carmel, A Bhattacharyya
Silicon, 1-10, 2022
32022
Channel and gate engineered dielectric modulated asymmetric dual short gate TFET
R Ramesh, A Pon, S Carmel, A Bhattacharyya
2017 International conference on Microelectronic Devices, Circuits and …, 2017
32017
Nanoscale circuit implementation using tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications
A Bhattacharyya, R Ramesh
Journal of Computational Electronics 16, 155-161, 2017
32017
Modeling non-quasi-static effects in SiGe HBTs using improved charge partitioning scheme
N Augustine, K Kumar, A Bhattacharyya, T Zimmer, A Chakravorty
IEEE transactions on electron devices 59 (9), 2542-2545, 2012
32012
Zigzag phosphorene antidot nanoribbons (ZPANRs) for the detection of nucleobases: A DFT based study
S Carmel, S Subramanian, MLP Tan, NE Alias, MA Riyadi, ...
Journal of Applied Physics 131 (14), 2022
22022
Influence of temperature on p-GaN HEMT for high power application
N Geddam, B Snega, A Pon, A Bhattacharyya, R Ramesh
2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020
22020
Equilibrium and nonequilibrium carrier statistics in carbon nano-allotropes
VK Arora, A Bhattacharyya
Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2013
22013
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Articles 1–20