Andres Godoy
Title
Cited by
Cited by
Year
Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures
A Palma, A Godoy, JA Jimenez-Tejada, JE Carceller, ...
Physical Review B 56 (15), 9565, 1997
1421997
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors
D Jimenez, E Miranda, A Godoy
IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010
1092010
A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007
922007
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
JB Roldan, A Godoy, F Gamiz, M Balaguer
IEEE transactions on electron devices 55 (1), 411-416, 2007
902007
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of applied physics 100 (1), 013701, 2006
822006
High photocurrent in gated graphene–silicon hybrid photodiodes
S Riazimehr, S Kataria, R Bornemann, P Haring Bolívar, FJG Ruiz, ...
ACS photonics 4 (6), 1506-1514, 2017
622017
A simple subthreshold swing model for short channel MOSFETs
A Godoy, JA López-Villanueva, JA Jiménez-Tejada, A Palma, F Gámiz
Solid-State Electronics 45 (3), 391-397, 2001
592001
Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz
Solid-State Electronics 54 (2), 131-136, 2010
532010
Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators
IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz
Solid-State Electronics 52 (12), 1854-1860, 2008
392008
A simple approach to quantum confinement in tunneling field-effect transistors
JL Padilla, F Gamiz, A Godoy
IEEE electron device letters 33 (10), 1342-1344, 2012
372012
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
372010
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
F Gamiz, JB Roldán, A Godoy, P Cartujo-Cassinello, JE Carceller
Journal of applied physics 94 (9), 5732-5741, 2003
372003
In-depth study of laser diode ablation of kapton polyimide for flexible conductive substrates
FJ Romero, A Salinas-Castillo, A Rivadeneyra, A Albrecht, A Godoy, ...
Nanomaterials 8 (7), 517, 2018
352018
Impact of quantum confinement on gate threshold voltage and subthreshold swings in double-gate tunnel FETs
JL Padilla, F Gamiz, A Godoy
IEEE transactions on electron devices 59 (12), 3205-3211, 2012
352012
High responsivity and quantum efficiency of graphene/silicon photodiodes achieved by interdigitating Schottky and gated regions
S Riazimehr, S Kataria, JM Gonzalez-Medina, S Wagner, M Shaygan, ...
ACS Photonics 6 (1), 107-115, 2018
332018
Effects of nonparabolic bands in quantum wires
A Godoy, Z Yang, U Ravaioli, F Gámiz
Journal of applied physics 98 (1), 013702, 2005
332005
Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility
F Gámiz, JB Roldán, A Godoy
Applied Physics Letters 80 (22), 4160-4162, 2002
332002
Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators
FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gámiz
IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009
312009
The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures
C Sampedro-Matarín, F Gámiz, A Godoy, FJG Ruiz
IEEE transactions on electron devices 53 (11), 2703-2710, 2006
312006
An analytical model for square GAA MOSFETs including quantum effects
E Moreno, JB Roldan, FG Ruiz, D Barrera, A Godoy, F Gámiz
Solid-State Electronics 54 (11), 1463-1469, 2010
302010
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Articles 1–20