Fluorocarbon high-density plasmas. II. Silicon dioxide and silicon etching using CF [sub 4] and CHF [sub 3] GS Oerhlein, Y Zhang, D Vender, O Joubert J. Vac. Sci. Technol. A 12, 333, 1994 | 214* | 1994 |
Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nm JP Booth, O Joubert, J Pelletier, N Sadeghi Journal of applied physics 69 (2), 618-626, 1991 | 152 | 1991 |
New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes G Cunge, B Pelissier, O Joubert, R Ramos, C Maurice Plasma Sources Science and Technology 14 (3), 599, 2005 | 132 | 2005 |
The etching of polymers in oxygen‐based plasmas: A parametric study O Joubert, J Pelletier, Y Arnal Journal of applied physics 65 (12), 5096-5100, 1989 | 129 | 1989 |
Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas N Posseme, T Chevolleau, T David, M Darnon, O Louveau, O Joubert Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 103 | 2007 |
Ion flux composition in and chemistries during silicon etching in industrial high-density plasmas G Cunge, RL Inglebert, O Joubert, L Vallier, N Sadeghi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 95 | 2002 |
Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists E Pargon, K Menguelti, M Martin, A Bazin, O Chaix-Pluchery, C Sourd, ... Journal of applied physics 105 (9), 2009 | 94 | 2009 |
Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma O Joubert, GS Oehrlein, M Surendra Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (3 …, 1994 | 93 | 1994 |
Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma O Joubert, GS Oehrlein, Y Zhang Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (3 …, 1994 | 93 | 1994 |
Influence of pattern density in nanoimprint lithography C Gourgon, C Perret, G Micouin, F Lazzarino, JH Tortai, O Joubert, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 86 | 2003 |
Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 … FH Bell, O Joubert Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997 | 82 | 1997 |
Etching mechanisms of low-k SiOCH and selectivity to SiCH and in fluorocarbon based plasmas N Posseme, T Chevolleau, O Joubert, L Vallier, P Mangiagalli Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 77 | 2003 |
Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing C Petit-Etienne, M Darnon, L Vallier, E Pargon, G Cunge, F Boulard, ... Journal of Vacuum Science & Technology B 28 (5), 926-934, 2010 | 76 | 2010 |
Cleaning aluminum fluoride coatings from plasma reactor walls in SiCl4/Cl2 plasmas R Ramos, G Cunge, B Pelissier, O Joubert Plasma Sources Science and Technology 16 (4), 711, 2007 | 73 | 2007 |
X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes L Desvoivres, L Vallier, O Joubert Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 73 | 2001 |
Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical … C Durand, C Dubourdieu, C Vallée, V Loup, M Bonvalot, O Joubert, ... Journal of applied physics 96 (3), 1719-1729, 2004 | 72 | 2004 |
Effects of ion bombardment and chemical reaction on wafer temperature during plasma etching A Durandet, O Joubert, J Pelletier, M Pichot Journal of applied physics 67 (8), 3862-3866, 1990 | 72 | 1990 |
Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas X Detter, R Palla, I Thomas-Boutherin, E Pargon, G Cunge, O Joubert, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 71 | 2003 |
Investigation of selective SiO2‐to‐Si etching in an inductively coupled high‐density plasma using fluorocarbon gases FH Bell, O Joubert, GS Oehrlein, Y Zhang, D Vender Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (6 …, 1994 | 70 | 1994 |
Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas E Sungauer, E Pargon, X Mellhaoui, R Ramos, G Cunge, L Vallier, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 67 | 2007 |