| Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistor grown by MBE SJ Cai, YS Tang, R Li, YY Wei, L Wong, YL Chen, KL Wang, M Chen, ... IEEE Transactions on Electron Devices 47 (2), 304-307, 2000 | 120 | 2000 |
| The effects of radiation on MEMS accelerometers AR Knudson, S Buchner, P McDonald, WJ Stapor, AB Campbell, ... IEEE Transactions on Nuclear Science 43 (6), 3122-3126, 1996 | 99 | 1996 |
| 200 MeV proton damage effects on multi-quantum well laser diodes YF Zhao, AR Patwary, RD Schrimpf, MA Neifeld, KF Galloway IEEE Transactions on Nuclear Science 44 (6), 1898-1905, 1997 | 59 | 1997 |
| Carrier lifetime and breakdown phenomena in SiC power device material T Kimoto, H Niwa, T Okuda, E Saito, Y Zhao, S Asada, J Suda Journal of Physics D: Applied Physics 51 (36), 363001, 2018 | 57 | 2018 |
| SiC double-trench MOSFETs with embedded MOS-channel diode X Zhou, H Pang, Y Jia, D Hu, Y Wu, Y Tang, T Xia, H Gong, Y Zhao IEEE Transactions on Electron Devices 67 (2), 582-587, 2020 | 40 | 2020 |
| Annealing effects on multi-quantum well laser diodes after proton irradiation YF Zhao, RD Schrimpf, AR Patwary, MA Neifeld, AW Al-Johani, RA Weller, ... IEEE Transactions on Nuclear Science 45 (6), 2826-2832, 1998 | 39 | 1998 |
| Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies SC Lee, YF Zhao, RD Schrimpf, MA Neifeld, KF Galloway IEEE Transactions on Nuclear Science 46 (6), 1797-1803, 1999 | 34 | 1999 |
| Impact ionization coefficients of 4H-SiC in a wide temperature range Y Zhao, H Niwa, T Kimoto Japanese Journal of Applied Physics 58 (1), 018001, 2018 | 29 | 2018 |
| SiC planar MOSFETs with built-in reverse MOS-channel diode for enhanced performance X Zhou, H Gong, Y Jia, D Hu, Y Wu, T Xia, H Pang, Y Zhao IEEE Journal of the Electron Devices Society 8, 619-625, 2020 | 28 | 2020 |
| A robust hardened latch featuring tolerance to double-node-upset in 28nm CMOS for spaceborne application Y Li, X Cheng, C Tan, J Han, Y Zhao, L Wang, T Li, MB Tahoori, X Zeng IEEE Transactions on Circuits and Systems II: Express Briefs 67 (9), 1619-1623, 2020 | 27 | 2020 |
| A decimation filter design and implementation for oversampled sigma delta A/D converters C Lei, Z Yuanfu, G Deyuan, W Wu, W Zongmin, Z Xiaofei, P Heping Proceedings of 2005 IEEE International Workshop on VLSI Design and Video …, 2005 | 26 | 2005 |
| SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD Y Zhao, L Wang, S Yue, D Wang, X Zhao, Y Sun, D Li, F Wang, X Yang, ... IEEE Transactions on Nuclear Science 62 (6), 2666-2672, 2015 | 24 | 2015 |
| Total-ionizing-dose irradiation-induced dielectric field enhancement for high-voltage SOI LDMOS X Zhou, L Shu, M Qiao, Z Lu, Y Zhao, Z Li, B Zhang IEEE Electron Device Letters 40 (4), 593-596, 2019 | 23 | 2019 |
| Progress and future challenges of SiC power devices and process technology T Kimoto, H Niwa, N Kaji, T Kobayashi, Y Zhao, S Mori, M Aketa 2017 IEEE international electron devices meeting (IEDM), 9.5. 1-9.5. 4, 2017 | 23 | 2017 |
| Evaluation and Analysis of Temperature-Dependent Dynamic of GaN Power Devices Considering High-Frequency Operation Y Li, Y Zhao, AQ Huang, L Zhang, Y Lei, R Yu, Q Ma, Q Huang, S Sen, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 111-123, 2019 | 22 | 2019 |
| A low-voltage CMOS low-dropout regulator with novel capacitor-multiplier frequency compensation Z Yan, L Shen, Y Zhao, S Yue 2008 IEEE International Symposium on Circuits and Systems (ISCAS), 2685-2688, 2008 | 21 | 2008 |
| Modeling and simulation of single-event effect in CMOS circuit S Yue, X Zhang, Y Zhao, L Liu, H Wang Journal of Semiconductors 36 (11), 111002, 2015 | 20 | 2015 |
| Degradation of radiation-hardened vertical double-diffused metal-oxide-semiconductor field-effect transistor during gamma ray irradiation performed after heavy ion striking X Li, Y Jia, X Zhou, Y Zhao, Y Tang, Y Li, G Liu, G Jia IEEE Electron Device Letters 41 (2), 216-219, 2019 | 18 | 2019 |
| Novel radiation hardening read/write circuits using feedback connections for spin–orbit torque magnetic random access memory B Wang, Z Wang, B Wu, Y Bai, K Cao, Y Zhao, Y Zhang, W Zhao IEEE Transactions on Circuits and Systems I: Regular Papers 66 (5), 1853-1862, 2019 | 18 | 2019 |
| Radiation-hardening techniques for spin orbit torque-MRAM peripheral circuitry B Wang, Z Wang, C Hu, Y Zhao, Y Zhang, W Zhao IEEE Transactions on Magnetics 54 (11), 1-5, 2018 | 18 | 2018 |
Liang WangBeijing Microelectronics Technology InstituteVerified email at vanderbilt.edu
