Uttam Singisetti
Uttam Singisetti
Professor, Electrical Engineering, Univeristy at Buffalo (SUNY)
Verifierad e-postadress på buffalo.edu
Citeras av
Citeras av
N-polar GaN epitaxy and high electron mobility transistors
M. H. Wong, S. Keller, S. Dasgupta, D. J. Denninghoff, S. Kolluri, D. F ...
Semiconductor Science and Technology 28 (7), 074009, 2013
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ...
IEEE Electron Device Letters 30 (11), 1128-1130, 2009
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3MOSFETs
K Zeng, A Vaidya, U Singisetti
IEEE Electron Device Letters 39 (9), 1385-1388, 2018
Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond
M Kim, JH Seo, U Singisetti, Z Ma
Journal of Materials Chemistry C 5 (33), 8338-8354, 2017
Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
K Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ...
IEEE Electron Device Letters 38 (4), 513-516, 2017
Ab initio velocity-field curves in monoclinic β-Ga2O3
K Ghosh, U Singisetti
Journal of Applied Physics 122 (3), 035702, 2017
Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation
G He, K Ghosh, U Singisetti, H Ramamoorthy, R Somphonsane, G Bohra, ...
Nano letters 15 (8), 5052-5058, 2015
Ultralow resistance in situ Ohmic contacts to InGaAs/InP
U.Singisetti, M.A.Wistey, J.Zimmerman, B.Thibeault, A.Gossard, M.Rodwell
Applied Physics Letters 93, 183502, 2008
Ab initio calculation of electron–phonon coupling in monoclinic β-Ga2O3 crystal
K Ghosh, U Singisetti
Applied Physics Letters 109 (7), 072102, 2016
Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ()
Y Jia, K Zeng, JS Wallace, JA Gardella, U Singisetti
Applied Physics Letters 106 (10), 102107, 2015
Ultralow resistance, nonalloyed Ohmic contacts to
AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth
U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ...
IEEE Electron Device Letters 32 (2), 137-139, 2010
Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement
K Ghosh, U Singisetti
Journal of Materials Research 32 (22), 4142-4152, 2017
Interface State Density in Atomic Layer Deposited SiO2/-Ga2O3() MOSCAPs
K Zeng, Y Jia, U Singisetti
IEEE Electron Device Letters 37 (7), 906-909, 2016
InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology
U Singisetti, MA Wistey, GJ Burek, E Arkun, AK Baraskar, Y Sun, ...
physica status solidi c 6 (6), 1394-1398, 2009
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage
S Sharma, K Zeng, S Saha, U Singisetti
IEEE Electron Device Letters 41 (6), 836-839, 2020
Impact ionization in β-Ga2O3
K Ghosh, U Singisetti
Journal of Applied Physics 124 (8), 085707, 2018
Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm, and 0.66
U Singisetti, MH Wong, JS Speck, UK Mishra
Electron Device Letters, IEEE 33 (1), 26-28, 2012
Ex situ Ohmic contacts to
A Baraskar, MA Wistey, V Jain, E Lobisser, U Singisetti, G Burek, YJ Lee, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors
M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ...
ACS nano 13 (1), 803-811, 2018
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