On the enhanced electron mobility in strained-silicon inversion layers MV Fischetti, F Gamiz, W Hänsch Journal of Applied Physics 92 (12), 7320-7324, 2002 | 266 | 2002 |

Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion F Gamiz, MV Fischetti Journal of Applied Physics 89 (10), 5478-5487, 2001 | 187 | 2001 |

Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ... Journal of Applied Physics 86 (12), 6854-6863, 1999 | 138 | 1999 |

Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA Lopez-Villanueva Journal of Applied Physics 90 (7), 3396-3404, 2001 | 112 | 2001 |

Semiconductor-on-insulator materials for nanoelectronics applications A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko Springer, 2011 | 105 | 2011 |

Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998 | 98 | 1998 |

A comprehensive model for Coulomb scattering in inversion layers F Gámiz, JA López‐Villanueva, JA Jiménez‐Tejada, I Melchor, A Palma Journal of applied physics 75 (2), 924-934, 1994 | 98 | 1994 |

Effects of the inversion-layer centroid on the performance of double-gate MOSFETs JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ... IEEE Transactions on Electron Devices 47 (1), 141-146, 2000 | 96 | 2000 |

A-RAM: Novel capacitor-less DRAM memory N Rodriguez, S Cristoloveanu, F Gamiz 2009 IEEE International SOI Conference, 1-2, 2009 | 95 | 2009 |

Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects JB Roldan, A Godoy, F Gamiz, M Balaguer IEEE Transactions on Electron Devices 55 (1), 411-416, 2007 | 92 | 2007 |

A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti IEEE transactions on electron devices 54 (12), 3369-3377, 2007 | 90 | 2007 |

Effects of the inversion layer centroid on MOSFET behavior JA Lopez-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ... IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997 | 87 | 1997 |

Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility L Donetti, F Gámiz, JB Roldán, A Godoy Journal of applied physics 100 (1), 013701, 2006 | 85 | 2006 |

Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos Journal of Applied Physics 92 (1), 288-295, 2002 | 82 | 2002 |

Direct and trap-assisted elastic tunneling through ultrathin gate oxides F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva Journal of Applied Physics 91 (8), 5116-5124, 2002 | 81 | 2002 |

Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ... Journal of Applied Physics 89 (3), 1764-1770, 2001 | 78 | 2001 |

Universality of electron mobility curves in MOSFETs: A Monte Carlo study F Gamiz, JA López-Villanueva, J Banqueri, JE Carceller, P Cartujo IEEE transactions on electron devices 42 (2), 258-265, 1995 | 72 | 1995 |

A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si_{1−x}Ge_{x} channel MOSFETsJB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller Journal of applied physics 80 (9), 5121-5128, 1996 | 67 | 1996 |

Modeling effects of electron-velocity overshoot in a MOSFET JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller IEEE Transactions on Electron Devices 44 (5), 841-846, 1997 | 64 | 1997 |

Novel capacitorless 1T-DRAM cell for 22-nm node compatible with bulk and SOI substrates N Rodriguez, S Cristoloveanu, F Gamiz IEEE Transactions on electron devices 58 (8), 2371-2377, 2011 | 58 | 2011 |