Wernersson Lars-Erik
Wernersson Lars-Erik
Verified email at eit.lth.se
Title
Cited by
Cited by
Year
Vertical high-mobility wrap-gated InAs nanowire transistor
T Bryllert, LE Wernersson, LE Froberg, L Samuelson
IEEE Electron Device Letters 27 (5), 323-325, 2006
4092006
Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots
HA Nilsson, P Caroff, C Thelander, M Larsson, JB Wagner, ...
Nano letters 9 (9), 3151-3156, 2009
2452009
Vertical wrap-gated nanowire transistors
T Bryllert, LE Wernersson, T Löwgren, L Samuelson
Nanotechnology 17 (11), S227, 2006
2332006
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
C Thelander, LE FrÖbergFroberg, C Rehnstedt, L Samuelson, ...
IEEE Electron Device Letters 29 (3), 206-208, 2008
2232008
High‐quality InAs/InSb nanowire heterostructures grown by metal–organic vapor‐phase epitaxy
P Caroff, JB Wagner, KA Dick, HA Nilsson, M Jeppsson, K Deppert, ...
Small 4 (7), 878-882, 2008
1832008
III–V compound semiconductor transistors—From planar to nanowire structures
H Riel, LE Wernersson, M Hong, JA Del Alamo
Cambridge University Press (Materials Research Society), 2014
1742014
InAs/GaSb heterostructure nanowires for tunnel field-effect transistors
BM Borg, KA Dick, B Ganjipour, ME Pistol, LE Wernersson, C Thelander
Nano letters 10 (10), 4080-4085, 2010
1662010
Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
E Lind, AI Persson, L Samuelson, LE Wernersson
Nano Letters 6 (9), 1842-1846, 2006
1582006
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch
P Caroff, ME Messing, BM Borg, KA Dick, K Deppert, LE Wernersson
Nanotechnology 20 (49), 495606, 2009
1402009
Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors
J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson
Nano letters 13 (4), 1380-1385, 2013
1292013
Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ...
Nano letters 10 (3), 809-812, 2010
1172010
High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors
AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ...
IEEE Electron device letters 34 (2), 211-213, 2013
1162013
Development of a vertical wrap-gated InAs FET
C Thelander, C Rehnstedt, LE Froberg, E Lind, T Martensson, P Caroff, ...
IEEE Transactions on electron devices 55 (11), 3030-3036, 2008
1112008
GaAs/GaSb nanowire heterostructures grown by MOVPE
M Jeppsson, KA Dick, JB Wagner, P Caroff, K Deppert, L Samuelson, ...
Journal of Crystal Growth 310 (18), 4115-4121, 2008
1062008
III-V nanowires—Extending a narrowing road
LE Wernersson, C Thelander, E Lind, L Samuelson
Proceedings of the IEEE 98 (12), 2047-2060, 2010
1022010
Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfaces
W Seifert, N Carlsson, A Petersson, LE Wernersson, L Samuelson
Applied physics letters 68 (12), 1684-1686, 1996
991996
Assembly of nanoscaled field effect transistors
LE Wernersson, E Lind, T Bryllert, J Ohlsson, T Löwgren, L Samuelson, ...
US Patent 8,063,450, 2011
972011
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
B Ganjipour, AW Dey, BM Borg, M Ek, ME Pistol, KA Dick, LE Wernersson, ...
Nano letters 11 (10), 4222-4226, 2011
972011
InAs nanowire metal-oxide-semiconductor capacitors
S Roddaro, K Nilsson, G Astromskas, L Samuelson, LE Wernersson, ...
Applied Physics Letters 92 (25), 253509, 2008
972008
Partially depleted SOI MOSFETs under uniaxial tensile strain
W Zhao, J He, RE Belford, LE Wernersson, A Seabaugh
IEEE Transactions on Electron Devices 51 (3), 317-323, 2004
962004
The system can't perform the operation now. Try again later.
Articles 1–20