| Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition F Huang, X Chen, X Liang, J Qin, Y Zhang, T Huang, Z Wang, B Peng, ... Physical Chemistry Chemical Physics 19 (5), 3486-3497, 2017 | 103 | 2017 |
| A resistorless high-precision compensated CMOS bandgap voltage reference ZK Zhou, Y Shi, Y Wang, N Li, Z Xiao, Y Wang, X Liu, Z Wang, B Zhang IEEE Transactions on Circuits and Systems I: Regular Papers 66 (1), 428-437, 2018 | 49 | 2018 |
| HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory F Huang, Y Wang, X Liang, J Qin, Y Zhang, X Yuan, Z Wang, B Peng, ... IEEE Electron Device Letters 38 (3), 330-333, 2017 | 47 | 2017 |
| A novel substrate-assisted RESURF technology for small curvature radius junction M Qiao, X Hu, H Wen, M Wang, B Luo, X Luo, Z Wang, B Zhang, Z Li 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 41 | 2011 |
| A resistorless low-power voltage reference Z Zhou, Y Shi, C Gou, X Wang, G Wu, J Feng, Z Wang, B Zhang IEEE Transactions on Circuits and Systems II: Express Briefs 63 (7), 613-617, 2016 | 36 | 2016 |
| Analytical modeling for a novel triple RESURF LDMOS with N-top layer M Qiao, Y Wang, X Zhou, F Jin, H Wang, Z Wang, Z Li, B Zhang IEEE Transactions on Electron Devices 62 (9), 2933-2939, 2015 | 33 | 2015 |
| A Resistorless CMOS Voltage Reference Based on Mutual Compensation of and Z Zhou, P Zhu, Y Shi, X Qu, H Wang, X Zhang, S Qiu, N Li, C Gou, Z Wang, ... IEEE Transactions on Circuits and Systems II: Express Briefs 60 (9), 582-586, 2013 | 33 | 2013 |
| Ultra-low specific on-resistance SOI high voltage trench LDMOS with dielectric field enhancement based on ENBULF concept W Zhang, M Qiao, L Wu, K Ye, Z Wang, Z Wang, X Luo, S Zhang, W Su, ... 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 30 | 2013 |
| High-voltage thick layer SOI technology for PDP scan driver IC M Qiao, L Jiang, M Wang, Y Huang, H Liao, T Liang, Z Sun, B Zhang, Z Li, ... 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 28 | 2011 |
| Non-full depletion mode and its experimental realization of the lateral superjunction W Zhang, S Pu, C Lai, L Ye, S Cheng, S Zhang, B He, Z Wang, X Luo, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 24 | 2018 |
| Back-Gate Effect onand BV for Thin Layer SOI Field p-Channel LDMOS X Zhou, M Qiao, Y He, Z Wang, Z Li, B Zhang IEEE Transactions on Electron Devices 62 (4), 1098-1104, 2015 | 22 | 2015 |
| A fast-transient capacitorless LDO with dual paths active-frequency compensation scheme X Ming, JJ Kuang, X Gong, Z Lin, J Xiong, Y Qin, Z Wang, B Zhang IEEE Transactions on Power Electronics 37 (9), 10332-10347, 2022 | 21 | 2022 |
| A high-efficiency and fast-transient low-dropout regulator with adaptive pole tracking frequency compensation technique X Ming, H Liang, ZW Zhang, YL Xin, Y Qin, Z Wang IEEE Transactions on Power Electronics 35 (11), 12401-12415, 2020 | 18 | 2020 |
| Numerical modelling of QCW-pumped passively Q-switched Nd: YAG lasers with Cr4+: YAG as saturable absorber W Yu-Ye, X De-Gang, X Jing-Ping, W Zhuo, W Peng, Y Jian-Quan Chinese Physics Letters 25 (8), 2880, 2008 | 17 | 2008 |
| An advanced bootstrap circuit for high frequency, high area-efficiency and low EMI buck converter X Ming, Z Fan, Y Xin, X Zhang, F Shi, S Pan, J Zhang, Z Wang, B Zhang IEEE Transactions on Circuits and Systems II: Express Briefs 66 (5), 858-862, 2019 | 16 | 2019 |
| A nanoscale low-power resistorless voltage reference with high PSRR Z Zhou, J Cao, Y Wang, Y Shi, Z Wang, B Zhang Nanoscale Research Letters 14, 1-9, 2019 | 14 | 2019 |
| A fast-transient low-dropout regulator with current-efficient super transconductance cell and dynamic reference control X Ming, JJ Kuang, H Liang, J Zhang, Y Qin, ZW Zhang, Z Wang, B Zhang IEEE Transactions on Circuits and Systems I: Regular Papers 68 (6), 2354-2367, 2021 | 12 | 2021 |
| Ultra-low specific on-resistance lateral double-diffused metal-oxide-semiconductor transistor with enhanced dual-gate and partial P-buried layer Z Wang, Z Yuan, X Zhou, M Qiao, Z Li, B Zhang Nanoscale Research Letters 14, 1-7, 2019 | 9 | 2019 |
| High-precision LED driving system based on LLC resonant converter Z Zhou, X Wan, Y Shi, Z Wang, B Zhang IET Digital Library, 2012 | 9 | 2012 |
| Total-ionizing-dose radiation-induced dual-channel leakage current at unclosed edge termination for high voltage SOI LDMOS X Zhou, Z Li, R Wang, L Shu, T Wang, M Qiao, Z Wang, Z Li, B Zhang IEEE Transactions on Electron Devices 68 (6), 2861-2866, 2021 | 8 | 2021 |
Bo Zhang （张波）,ProfessorUniv. of Electron. Sci. & Technol. of ChinaVerified email at uestc.edu.cn
