Tommy Ive
Tommy Ive
Associate Professor, Dept. of Microtechnology and Nanoscience, Chalmers University of Technology
Verified email at chalmers.se - Homepage
TitleCited byYear
Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride
MV Kamalakar, A Dankert, J Bergsten, T Ive, SP Dash
Scientific reports 4, 6146, 2014
1192014
Causes of incorrect carrier-type identification in van der Pauw–Hall measurements
O Bierwagen, T Ive, CG Van de Walle, JS Speck
Applied Physics Letters 93 (24), 242108, 2008
1062008
Controlled -type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
T Ive, O Brandt, H Kostial, KJ Friedland, L Däweritz, KH Ploog
Applied Physics Letters 86 (2), 024106, 2005
802005
Properties of InN layers grown on 6H–SiC (0001) by plasma-assisted molecular beam epitaxy
T Ive, O Brandt, M Ramsteiner, M Giehler, H Kostial, KH Ploog
Applied physics letters 84 (10), 1671-1673, 2004
572004
Crack-free and conductive Si-doped distributed Bragg reflectors grown on 6H-SiC(0001)
T Ive, O Brandt, H Kostial, T Hesjedal, M Ramsteiner, KH Ploog
Applied physics letters 85 (11), 1970-1972, 2004
522004
Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures
MV Kamalakar, A Dankert, J Bergsten, T Ive, SP Dash
Applied Physics Letters 105 (21), 212405, 2014
332014
Step-flow growth of ZnO (0 0 0 1) on GaN (0 0 0 1) by metalorganic chemical vapor epitaxy
T Ive, T Ben-Yaacov, CG Van de Walle, UK Mishra, SP DenBaars, ...
Journal of Crystal Growth 310 (15), 3407-3412, 2008
292008
Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates
T Ben-Yaacov, T Ive, CG Van de Walle, UK Mishra, JS Speck, ...
Journal of electronic materials 39 (5), 608-611, 2010
212010
(Al, In) N layers and (Al, In) N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6 H-SiC (0001)
T Ive, O Brandt, X Kong, A Trampert, KH Ploog
Physical Review B 78 (3), 035311, 2008
212008
Nucleation and epitaxial growth of ZnO on GaN (0001)
D Adolph, T Ive
Applied Surface Science 307, 438-443, 2014
202014
Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt
J Sun, MT Cole, SA Ahmad, O Backe, T Ive, M Loffler, N Lindvall, E Olsson, ...
IEEE Transactions on Semiconductor Manufacturing 25 (3), 494-501, 2012
192012
Exciton impact-ionization dynamics modulated by surface acoustic waves in GaN
J Pedrós, Y Takagaki, T Ive, M Ramsteiner, O Brandt, U Jahn, KH Ploog, ...
Physical Review B 75 (11), 115305, 2007
192007
Equivalent-circuit analysis for the electroluminescence-efficiency problem of InGaN/GaN light-emitting diodes
H Masui, T Ive, MC Schmidt, NN Fellows, H Sato, H Asamizu, S Nakamura, ...
Japanese Journal of Applied Physics 47 (4R), 2112, 2008
182008
Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires
C Pfüller, O Brandt, T Flissikowski, HT Grahn, T Ive, JS Speck, ...
Applied Physics Letters 98 (11), 113113, 2011
132011
Metalorganic chemical vapor deposition of ZnO (0001) thin films on GaN (0001) templates and ZnO (0001) substrates
T Ive, T Ben‐Yaacov, A Murai, H Asamizu, CG Van de Walle, U Mishra, ...
physica status solidi c 5 (9), 3091-3094, 2008
132008
Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements
O Bierwagen, T Nagata, T Ive, CG Van de Walle, JS Speck
Applied Physics Letters 94 (15), 152110, 2009
82009
Conductive and crack-free AlN/GaN: Si distributed Bragg reflectors grown on 6H-SiC (0 0 0 1)
T Ive, O Brandt, KH Ploog
Journal of crystal growth 278 (1-4), 355-360, 2005
82005
Growth of ZnO (0001) on GaN (0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy
D Adolph, T Tingberg, T Ive
Journal of Crystal Growth 426, 129-134, 2015
72015
Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy
D Adolph, RR Zamani, KA Dick, T Ive
APL Materials 4 (8), 086106, 2016
52016
Homoepitaxial growth and characterization of ZnO (0001) thin films grown by metalorganic chemical vapor epitaxy
T Ive, T Ben‐Yaacov, CG Van de Walle, UK Mishra, SP Denbaars, ...
physica status solidi c 6 (6), 1460-1463, 2009
52009
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Articles 1–20