Mikael Ístling
TitleCited byYear
Metal silicides in CMOS technology: Past, present, and future trends
SL Zhang, M Ístling
Critical Reviews in Solid State and Materials Sciences 28 (1), 1-129, 2003
3742003
Efficient inkjet printing of graphene
J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Ístling
Advanced materials 25 (29), 3985-3992, 2013
2882013
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano letters 13 (7), 3237-3242, 2013
2292013
Low-frequency noise in advanced MOS devices
M Haartman, M Ístling
Springer Science & Business Media, 2007
2212007
A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering
Z Qiu, Z Zhang, M Ostling, SL Zhang
IEEE Transactions on Electron Devices 55 (1), 396-403, 2007
2142007
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano letters 13 (4), 1435-1439, 2013
1882013
Residual metallic contamination of transferred chemical vapor deposited graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS nano 9 (5), 4776-4785, 2015
1772015
Vertical graphene base transistor
W Mehr, J Dabrowski, JC Scheytt, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
1412012
Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in chemistries
JJ Wang, ES Lambers, SJ Pearton, M Ostling, CM Zetterling, JM Grow, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4á…, 1998
1401998
SiC power devices—Present status, applications and future perspective
M Ístling, R Ghandi, CM Zetterling
2011 IEEE 23rd International Symposium on Power Semiconductor Devices andá…, 2011
1332011
Resistive graphene humidity sensors with rapid and direct electrical readout
AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ...
Nanoscale 7 (45), 19099-19109, 2015
1282015
Inkjet Printing of MoS2
J Li, MM Naiini, S Vaziri, MC Lemme, M Ístling
Advanced Functional Materials 24 (41), 6524-6531, 2014
1132014
Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal
Z Zhang, Z Qiu, R Liu, M Ostling, SL Zhang
IEEE electron device letters 28 (7), 565-568, 2007
1082007
A comparative study of the diffusion barrier properties of TiN and ZrN
M Ístling, S Nygren, CS Petersson, H Norstr÷m, R Buchta, HO Blom, ...
Thin solid films 145 (1), 81-88, 1986
981986
Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum
A Mouroux, SL Zhang, W Kaplan, S Nygren, M Ístling, CS Petersson
Applied physics letters 69 (7), 975-977, 1996
931996
Scalable fabrication and integration of graphene microsupercapacitors through full inkjet printing
J Li, S Sollami Delekta, P Zhang, S Yang, MR Lohe, X Zhuang, X Feng, ...
ACS nano 11 (8), 8249-8256, 2017
872017
Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide
CM Zetterling, M Ístling, K Wongchotigul, MG Spencer, X Tang, CI Harris, ...
Journal of applied physics 82 (6), 2990-2995, 1997
831997
500Bipolar Integrated OR/NOR Gate in 4H-SiC
L Lanni, BG Malm, M Ístling, CM Zetterling
IEEE Electron Device Letters 34 (9), 1091-1093, 2013
812013
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
SK Lee, CM Zetterling, M Ístling, I ┼berg, MH Magnusson, K Deppert, ...
Solid-State Electronics 46 (9), 1433-1440, 2002
742002
Thermally stable low ohmic contacts to p-type 6H SiC using cobalt silicides
N Lundberg, M Ístling
Solid-State Electronics 39 (11), 1559-1565, 1996
731996
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Articles 1–20