| Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices S Huang, X Liu, X Wang, X Kang, J Zhang, J Fan, J Shi, K Wei, Y Zheng, ... IEEE Transactions on Electron Devices 65 (1), 207-214, 2017 | 99 | 2017 |
| Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNxPassivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ... IEEE Transactions on Electron Devices 63 (2), 614-619, 2016 | 94 | 2016 |
| High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ... IEEE Electron Device Letters 37 (12), 1617-1620, 2016 | 80 | 2016 |
| Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-grown SiNx Layer X Wang, S Huang, Y Zheng, K Wei, X Chen, G Liu, TT Yuan, W Luo, ... IEEE ELECTRON DEVICE LETTERS, 2015 | 76 | 2015 |
| Effect of GaN channel layer thickness on DC and RF performance of GaN HEMTs with composite AlGaN/GaN buffer X Wang, S Huang, Y Zheng, K Wei, X Chen, H Zhang, X Liu IEEE Transactions on electron devices 61 (5), 1341-1346, 2014 | 74 | 2014 |
| A 5.8-GHz high-power and high-efficiency rectifier circuit with lateral GaN Schottky diode for wireless power transfer K Dang, J Zhang, H Zhou, S Huang, T Zhang, Z Bian, Y Zhang, X Wang, ... IEEE Transactions on Power Electronics 35 (3), 2247-2252, 2019 | 69 | 2019 |
| O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ... Applied Physics Letters 106 (3), 2015 | 69 | 2015 |
| High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique S Huang, X Liu, J Zhang, K Wei, G Liu, X Wang, Y Zheng, H Liu, Z Jin, ... IEEE Electron Device Letters 36 (8), 754-756, 2015 | 62 | 2015 |
| Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing JZSHQBXWKWYZYLCZXLQZWCB Zhang Appl. Phys. Lett. 107, 262109, 2015 | 61 | 2015 |
| High-fMAX High Johnson's Figure-of-Merit 0.2-Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx Passivation S Huang, K Wei, G Liu, Y Zheng, X Wang, L Pang, X Kong, X Liu, Z Tang, ... Electron Device Letters, IEEE 35 (3), 315-317, 2014 | 59* | 2014 |
| Ultralow-contact-resistance Au-free ohmic contacts with low annealing temperature on AlGaN/GaN heterostructures J Zhang, X Kang, X Wang, S Huang, C Chen, K Wei, Y Zheng, Q Zhou, ... IEEE Electron Device Letters 39 (6), 847-850, 2018 | 57 | 2018 |
| High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3gate dielectric for high-performance normally-off GaN MIS-HEMTs S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ... 2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014 | 51 | 2014 |
| Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ... Journal of Vacuum Science & Technology B 34 (4), 2016 | 44 | 2016 |
| Millimeter-wave AlGaN/GaN HEMTs with 43.6% power-added-efficiency at 40 GHz fabricated by atomic layer etching gate recess Y Zhang, S Huang, K Wei, S Zhang, X Wang, Y Zheng, G Liu, X Chen, Y Li, ... IEEE Electron Device Letters 41 (5), 701-704, 2020 | 41 | 2020 |
| Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking X Kang, X Wang, S Huang, J Zhang, J Fan, S Yang, Y Wang, Y Zheng, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 35 | 2018 |
| High-temperature-recessed millimeter-wave AlGaN/GaN HEMTs with 42.8% power-added-efficiency at 35 GHz Y Zhang, K Wei, S Huang, X Wang, Y Zheng, G Liu, X Chen, Y Li, X Liu IEEE Electron Device Letters 39 (5), 727-730, 2018 | 29 | 2018 |
| Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors S Huang, X Wang, X Liu, R Zhao, W Shi, Y Zhang, J Fan, H Yin, K Wei, ... Journal of Applied Physics 126 (16), 2019 | 28 | 2019 |
| Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition X Liu, X Wang, Y Zhang, K Wei, Y Zheng, X Kang, H Jiang, J Li, W Wang, ... ACS applied materials & interfaces 10 (25), 21721-21729, 2018 | 27 | 2018 |
| Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments F Guo, S Huang, X Wang, T Luan, W Shi, K Deng, J Fan, H Yin, J Shi, ... Applied Physics Letters 118 (9), 2021 | 26 | 2021 |
| Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure Q Bao, S Huang, X Wang, K Wei, Y Zheng, Y Li, C Yang, H Jiang, J Li, ... Semiconductor Science and Technology 31 (6), 065014, 2016 | 25 | 2016 |
