| Time-dependent dielectric breakdown of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, MH White, A Salemi, D Sheridan, AK Agarwal IEEE Journal of the Electron Devices Society 9, 633-639, 2021 | 37 | 2021 |
| Investigation of gate leakage current behavior for commercial 1.2 kV 4H-SiC power MOSFETs S Zhu, T Liu, MH White, AK Agarwal, A Salemi, D Sheridan 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 29 | 2021 |
| Body diode reliability of commercial SiC power MOSFETs M Kang, S Yu, D Xing, T Liu, A Salemi, K Booth, S Zhu, MH White, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 26 | 2019 |
| Gate oxide reliability studies of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, S Yu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 22 | 2020 |
| Manipulation of group-velocity-locked vector dissipative solitons and properties of the generated high-order vector soliton structure SN Zhu, ZC Wu, SN Fu, LM Zhao Applied Optics 57 (9), 2064-2068, 2018 | 20 | 2018 |
| Gate leakage current and time-dependent dielectric breakdown measurements of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, S Yu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 17 | 2019 |
| Fiber optics frequency comb enabled linear optical sampling with operation wavelength range extension R Liao, Z Wu, S Fu, S Zhu, Z Yu, M Tang, D Liu Optics letters 43 (3), 439-442, 2018 | 16 | 2018 |
| The road to a robust and affordable SiC power MOSFET technology HLR Maddi, S Yu, S Zhu, T Liu, L Shi, M Kang, D Xing, S Nayak, ... Energies 14 (24), 8283, 2021 | 15 | 2021 |
| Effects of oxide electric field stress on the gate oxide reliability of commercial SiC power MOSFETs L Shi, T Liu, S Zhu, J Qian, M Jin, HLR Maddi, MH White, AK Agarwal 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 11 | 2022 |
| Threshold voltage instability of commercial 1.2 kV SiC power MOSFETs S Yu, T Liu, S Zhu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 10 | 2020 |
| Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs S Zhu, T Liu, J Fan, HLR Maddi, MH White, AK Agarwal Materials 15 (17), 5995, 2022 | 9 | 2022 |
| Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs L Shi, S Zhu, J Qian, M Jin, M Bhattacharya, MH White, AK Agarwal, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2023 | 8 | 2023 |
| Comparison of gate oxide lifetime predictions with charge-to-breakdown approach and constant-voltage TDDB on SiC power MOSFET S Zhu, T Liu, L Shi, M Jin, HLR Maddi, MH White, AK Agarwal 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 8 | 2021 |
| JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs T Liu, S Zhu, A Salemi, D Sheridan, MH White, AK Agarwal Solid State Electronics Letters 3, 53-58, 2021 | 6 | 2021 |
| Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs S Zhu, L Shi, M Jin, J Qian, M Bhattacharya, HLR Maddi, MH White, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023 | 4 | 2023 |
| Impacts of Area-Dependent Defects on the Yield and Gate Oxide Reliability of SiC Power MOSFETs T Liu, S Zhu, M Jin, L Shi, MH White, AK Agarwal 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 2 | 2021 |
| A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies S Zhu, T Liu, A Salemi, M Jin, MH White, D Sheridan, AK Agarwal 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 1 | 2022 |
| A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching S Zhu, T Liu, J Fan, A Salemi, MH White, D Sheridan, AK Agarwal Materials 15 (19), 6690, 2022 | 1 | 2022 |
| Evidence of pseudo-high-order group-velocity-locked vector dissipative solitons S Zhu, D Liu, X Jin, L Li, M Tang, S Fu, L Zhao 2016 IEEE Photonics Conference (IPC), 172-173, 2016 | 1 | 2016 |
| Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress J Qian, L Shi, M Jin, M Bhattacharya, H Yu, MH White, AK Agarwal, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2024 | | 2024 |
Anant AgarwalProfessor of Electrical Engineering, Ohio State UniversityVerified email at ieee.org
