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Georg Tolstoy
Georg Tolstoy
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High-power modular multilevel converters with SiC JFETs
D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ...
IEEE Transactions on Power Electronics 27 (1), 28-36, 2011
2302011
Short-circuit protection circuits for silicon-carbide power transistors
DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ...
IEEE transactions on industrial electronics 63 (4), 1995-2004, 2015
1702015
Challenges regarding parallel connection of SiC JFETs
D Peftitsis, R Baburske, J Rabkowski, J Lutz, G Tolstoy, HP Nee
IEEE Transactions on Power Electronics 28 (3), 1449-1463, 2012
1362012
Low-loss high-performance base-drive unit for SiC BJTs
J Rabkowski, G Tolstoy, D Peftitsis, HP Nee
IEEE Transactions on Power Electronics 27 (5), 2633-2643, 2011
1062011
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee
IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015
702015
A discretized proportional base driver for silicon carbide bipolar junction transistors
G Tolstoy, D Peftitsis, J Rabkowski, PR Palmer, HP Nee
IEEE Transactions on Power Electronics 29 (5), 2408-2417, 2013
372013
Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection
DP Sadik, J Colmenares, D Peftitsis, G Tolstoy, J Rabkowski, HP Nee
2014 16th European Conference on Power Electronics and Applications, 1-10, 2014
352014
Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors
D Peftitsis, J Rabkowski, G Tolstoy, HP Nee
Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011
332011
High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications
J Colmenares, D Peftitsis, G Tolstoy, D Sadik, HP Nee, J Rabkowski
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 468-474, 2014
282014
Comparison of total losses of 1.2 kV SiC JFET and BJT in DC-DC converter including gate driver
JK Lim, G Tolstoy, D Peftitsis, J Rabkowski, M Bakowski, HP Nee
Materials Science Forum 679, 649-652, 2011
152011
Performance Tests of a 4, 1x4, 1mm2 SiC LCVJFET for a DC/DC Boost Converter Application
G Tolstoy, D Peftitsis, J Rabkowski, HP Nee
Materials Science Forum 679, 722-725, 2011
152011
An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter
G Tolstoy, P Ranstad, J Colmenares, D Peftitsis, F Giezendanner, ...
2014 16th European Conference on Power Electronics and Applications, 1-10, 2014
132014
High-efficiency power conversion using silicon carbide power electronics
HP Nee, J Rabkowski, D Peftitsis, G Tolstoy, J Colmenares, DP Sadik, ...
Materials Science Forum 778, 1083-1088, 2014
62014
Experimental comparison of different gate-driver configurations for parallel-connection of normally-on SiC JFETs
D Peftitsis, JK Lim, J Rabkowski, G Tolstoy, HP Nee
Proceedings of The 7th International Power Electronics and Motion Control …, 2012
62012
Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter
G Tolstoy, P Ranstad, J Colmenares, F Giezendanner, HP Nee
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
52015
Sic power devices in a soft switching converter, including aspects on packaging
P Ranstad, F Giezendanner, M Bakowski, JK Lim, G Tolstoy, A Ranstad
ECS Transactions 64 (7), 51, 2014
42014
Dual control used in series-loaded resonant converter with SiC devices
G Tolstoy, P Ranstad, J Colmenares, F Giezendanner, HP Nee
2015 9th International Conference on Power Electronics and ECCE Asia (ICPE …, 2015
32015
High-efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-resonant Converters
G Tolstoy
KTH Royal Institute of Technology, 2015
32015
Elimination of vector changes due to sector changes with DTC
G Tolstoy, O Wallmark, S Norrga, HP Nee, B Larsson
EPE Journal 25 (4), 11-16, 2015
12015
Experimental evaluation of SiC BJT and SiC MOSFET in a series resonantconverter
G Tolstoy, P Ranstad, J Colmenares, F Giezendanner, HP Nee
12015
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