| Batch-fabricated high-performance graphene Hall elements H Xu, Z Zhang, R Shi, H Liu, Z Wang, S Wang, LM Peng Scientific reports 3 (1), 1207, 2013 | 108 | 2013 |
| High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique S Huang, X Liu, J Zhang, K Wei, G Liu, X Wang, Y Zheng, H Liu, Z Jin, ... IEEE Electron Device Letters 36 (8), 754-756, 2015 | 62 | 2015 |
| Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy S Kai Wang, HG Liu, A Toriumi Applied Physics Letters 101 (6), 2012 | 56 | 2012 |
| High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3gate dielectric for high-performance normally-off GaN MIS-HEMTs S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ... 2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014 | 52 | 2014 |
| Surface recombination currents in" Type-II" NpN InP-GaAsSb-InP self-aligned DHBTs NGM Tao, H Liu, CR Bolognesi IEEE transactions on electron devices 52 (6), 1061-1066, 2005 | 44 | 2005 |
| 600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT x BVCEO ≫ 2.5 THz-V at Room Temperature HG Liu, O Ostinelli, Y Zeng, CR Bolognesi 2007 IEEE International Electron Devices Meeting, 667-670, 2007 | 43 | 2007 |
| 15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/= 384 GHz and a 6-V BV/sub CEO HG Liu, SP Watkins, CR Bolognesi IEEE transactions on electron devices 53 (3), 559-561, 2006 | 38 | 2006 |
| Extraction of the average collector velocity in high-speed" Type-II" InP-GaAsSb-InP DHBTs HG Liu, N Tao, SP Watkins, CR Bolognesi IEEE electron device letters 25 (12), 769-771, 2004 | 37 | 2004 |
| Scalable Fabrication of Ambipolar Transistors and Radio‐Frequency Circuits Using Aligned Carbon Nanotube Arrays Z Wang, S Liang, Z Zhang, H Liu, H Zhong, LH Ye, S Wang, W Zhou, J Liu, ... Advanced Materials 26 (4), 645-652, 2014 | 33 | 2014 |
| Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors J Ge, HG Liu, YB Su, YX Cao, Z Jin Chinese Physics B 21 (5), 058501, 2012 | 31 | 2012 |
| A modified wrinkle-free MoS2 film transfer method for large area high mobility field-effect transistor X Liu, K Huang, M Zhao, F Li, H Liu Nanotechnology 31 (5), 055707, 2019 | 28 | 2019 |
| High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With HG Liu, O Ostinelli, YP Zeng, CR Bolognesi IEEE electron device letters 28 (10), 852-855, 2007 | 28 | 2007 |
| Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs NG Tao, HG Liu, CR Bolognesi Solid-state electronics 51 (6), 995-1001, 2007 | 28 | 2007 |
| High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3 HG Liu, JQ Wu, N Tao, AV Firth, EM Griswold, TW MacElwee, ... Journal of crystal growth 267 (3-4), 592-597, 2004 | 25 | 2004 |
| Enhanced performance of GaN-based light-emitting diodes by using Al mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector with patterned … H Chen, H Guo, P Zhang, X Zhang, H Liu, S Wang, Y Cui Applied Physics Express 6 (2), 022101, 2013 | 23 | 2013 |
| High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside … H Guo, X Zhang, H Chen, P Zhang, H Liu, H Chang, W Zhao, Q Liao, ... Optics Express 21 (18), 21456-21465, 2013 | 22 | 2013 |
| The impact of HCl precleaning and sulfur passivation on the Al2O3/Ge interface in Ge metal-oxide-semiconductor capacitors BQ Xue, HD Chang, B Sun, SK Wang, HG Liu Chinese Physics Letters 29 (4), 046801, 2012 | 22 | 2012 |
| Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits JM Ruiz-Palmero, U Hammer, H Jäckel, H Liu, CR Bolognesi Solid-state electronics 51 (6), 842-859, 2007 | 22 | 2007 |
| Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method X Yang, SK Wang, X Zhang, B Sun, W Zhao, HD Chang, ZH Zeng, H Liu Applied Physics Letters 105 (9), 2014 | 20 | 2014 |
| Neutral base recombination in InP∕ GaAsSb∕ InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers CR Bolognesi, HG Liu, N Tao, X Zhang, S Bagheri-Najimi, SP Watkins Applied Physics Letters 86 (25), 2005 | 20 | 2005 |
Prof. Dr. Colombo BolognesiETH Zurich, Chair, Millimeter-Wave ElectronicsVerified email at mwe.ee.ethz.ch
